Study of Polarization and Relaxation on Pb(Zr,Ti)O3 Thin Films by Scanning Probe Microscopy

2012 ◽  
Vol 463-464 ◽  
pp. 1484-1487
Author(s):  
Jian Shen ◽  
Huai Wu Zhang
Keyword(s):  
Scanning Probe Microscopy ◽  
Negative Charge ◽  
High Vacuum ◽  
Piezoresponse Force Microscopy ◽  
Scanning Probe ◽  
Relaxation Phenomena ◽  
Radio Frequency Magnetron Sputtering ◽  
Kelvin Probe ◽  
Force Microscopy ◽  
Pzt Thin Film

Polycrystalline Pb(Zr0.55T0.45)O3thin film was deposited on Pt/Ti/SiO2Si(100) by radio-frequency-magnetron sputtering method, the writing of charge bits and the polarization relaxation phenomena on the surface of PZT thin film was studied by Kelvin probe force microscopy and Piezoresponse force microscopy, respectively. It is found that the surface potential of the negative charge bits are higher than those of the corresponding positive ones, and the charge accumulates remarkably in high vacuum but relax more quickly. The domain images (contrast) reveal that the polarization magnitude is determined by the orientation of each grain, which is proved by the Ref 14. Taking the polarized area as whole, the relaxation of polarization magnitude (contrast) show that the polarized state in some grain can maintain at leas¬t 105s, but in other grain, the polarization disappear relatively quickly.

scholarly journals Исследование пленок диметилдиимида перилентетракарбоновой кислоты методами циклической термодесорбции и сканирующей зондовой микроскопии

2018 ◽  
Vol 60 (2) ◽  
pp. 255
Author(s):  
А.Е. Почтенный ◽  
А.Н. Лаппо ◽  
И.П. Ильюшонок
Keyword(s):  
Atomic Force Microscopy ◽  
Scanning Probe Microscopy ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Bandgap Width ◽  
Kelvin Probe ◽  
Tunneling Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Probe Spectroscopy

AbstractSome results of studying the direct-current (DC) conductivity of perylenetetracarboxylic acid dimethylimide films by cyclic oxygen thermal desorption are presented. The microscopic parameters of hopping electron transport over localized impurity and intrinsic states were determined. The bandgap width and the sign of major current carriers were determined by scanning probe microscopy methods (atomic force microscopy, scanning probe spectroscopy, and photoassisted Kelvin probe force microscopy). The possibility of the application of photoassisted scanning tunneling microscopy for the nanoscale phase analysis of photoconductive films is discussed.

Industrial Applications of Scanning Probe Microscopy

1998 ◽  
Vol 4 (S2) ◽  
pp. 522-523
Author(s):  
S. Magonov
Keyword(s):  
Scanning Probe Microscopy ◽  
High Vacuum ◽  
Sample Surface ◽  
Industrial Applications ◽  
Ultra High Vacuum ◽  
Scanning Probe ◽  
Scanning Tunneling ◽  
Tunneling Microscopy ◽  
Probe Microscopy ◽  
Force Microscopy

The evolution of scanning tunneling microscopy (STM) into atomic force microscopy (AFM) have led to a family of scanning probe techniques which are widely applied in fundamental research and in industry. Visualization of the atomic- and molecular-scale structures and the possibility of modifying these structures using a sharp probe were demonstrated with the techniques on many materials. These unique capabilities initiated the further development of AFM and related methods generalized as scanning probe microscopy (SPM). The first STM experiments were performed in the clean conditions of ultra-high vacuum and on well-defined conducting or semi-conducting surfaces. These conditions restrict SPM applications to the real world that requires ambient-condition operation on the samples, many of which are insulators. AFM, which is based on the detection of forces between a tiny cantilever carrying a sharp tip and a sample surface, was introduced to satisfy these requirements. High lateral resolution and unique vertical resolution (angstrom scale) are essential AFM features.

scholarly journals Micro-Area Ferroelectric, Piezoelectric and Conductive Properties of Single BiFeO3 Nanowire by Scanning Probe Microscopy

Nanomaterials ◽  
2019 ◽  
Vol 9 (2) ◽  
pp. 190 ◽  
Author(s):  
Shenglan Wu ◽  
Jing Zhang ◽  
Xiaoyan Liu ◽  
Siyi Lv ◽  
Rongli Gao ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Bismuth Ferrite ◽  
Piezoresponse Force Microscopy ◽  
Scanning Probe ◽  
Switching Behavior ◽  
X Ray Diffraction ◽  
Probe Microscopy ◽  
Force Microscopy ◽  
Atomic Force ◽  
Conductive Properties

Ferroelectric nanowires have attracted great attention due to their excellent physical properties. We report the domain structure, ferroelectric, piezoelectric, and conductive properties of bismuth ferrite (BFO, short for BiFeO3) nanowires characterized by scanning probe microscopy (SPM). The X-ray diffraction (XRD) pattern presents single phase BFO without other obvious impurities. The piezoresponse force microscopy (PFM) results indicate that the nanowires possess a multidomain configuration, and the maximum piezoelectric coefficient (d33) of single BFO nanowire is 22.21 pm/V. Poling experiments and local switching spectroscopy piezoresponse force microscopy (SS-PFM) demonstrate that there is sufficient polarization switching behavior and obvious piezoelectric properties in BFO nanowires. The conducting atomic force microscopy (C-AFM) results show that the current is just hundreds of pA at 8 V. These lay the foundation for the application of BFO nanowires in nanodevices.

EEPROM Failure Analysis Methodology : Can Programmed Charges be Measured Directly by Electrical Techniques of Scanning Probe Microscopy (SPM)?

2005 ◽  
Author(s):  
Christophe De Nardi ◽  
Romain Desplats ◽  
Philippe Perdu ◽  
Félix Beaudoin ◽  
Jean Luc Gauffier
Keyword(s):  
Scanning Probe Microscopy ◽  
Floating Gate ◽  
Scanning Probe ◽  
Kelvin Probe ◽  
Oxide Interfaces ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Force Microscopy ◽  
Analysis Methodology ◽  
Electric Force Microscopy

Abstract A method to measure “on site” programmed charges in EEPROM devices is presented. Electrical Scanning Probe Microscopy (SPM) based techniques such as Electric Force Microscopy (EFM) and Scanning Kelvin Probe Microscopy (SKPM) are used to directly probe floating gate potentials. Both preparation and probing methods are discussed. Sample preparation to access floating gate/oxide interfaces at a few nanometers distance without discharging the gate proves to be the key problem, more than the probing technique itself. Applications are demonstrated on 128 kbit EEPROMs from ST Microelectronics and 64 kbit EEPROMs from Atmel.

scholarly journals Exploring Local Electrostatic Effects with Scanning Probe Microscopy: Implications for Piezoresponse Force Microscopy and Triboelectricity

ACS Nano ◽  
2014 ◽  
Vol 8 (10) ◽  
pp. 10229-10236 ◽  
Author(s):  
Nina Balke ◽  
Petro Maksymovych ◽  
Stephen Jesse ◽  
Ivan I. Kravchenko ◽  
Qian Li ◽  
...  
Keyword(s):  
Scanning Probe Microscopy ◽  
Piezoresponse Force Microscopy ◽  
Scanning Probe ◽  
Electrostatic Effects ◽  
Probe Microscopy ◽  
Force Microscopy

Characterization of local electric properties of oxide materials using scanning probe microscopy techniques: A review

2018 ◽  
Vol 11 (05) ◽  
pp. 1830002 ◽  
Author(s):  
Wanheng Lu ◽  
Kaiyang Zeng
Keyword(s):  
Metal Oxides ◽  
Scanning Probe Microscopy ◽  
Electrostatic Force ◽  
Functional Materials ◽  
Electric Properties ◽  
Scanning Probe ◽  
Surface Charges ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Force Microscopy

The structure-function relationship at the nanoscale is of great importance for many functional materials, such as metal oxides. To explore this relationship, Scanning Probe Microscopy (SPM)-based techniques are used as powerful and effective methods owing to their capability to investigate the local surface structures and multiple properties of the materials with a high spatial resolution. This paper gives an overview of SPM-based techniques for characterizing the electric properties of metal oxides with potential in the applications of electronics devices. Three types of SPM techniques, including conductive AFM ([Formula: see text]-AFM), Kelvin Probe Force Microscopy (KPFM), and Electrostatic Force Microscopy (EFM), are summarized with focus on their principles and advances in measuring the electronic transport, ionic dynamics, the work functions and the surface charges of oxides.

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