Compositional and Deposition Rate Dependence upon RF Substrate Bias of RF Sputtered Ni-Fe Films

2012 ◽  
Vol 488-489 ◽  
pp. 452-456
Author(s):  
Pervez Akhtar ◽  
Riaz Mahmud
Keyword(s):  
Substrate Temperature ◽  
Radio Frequency ◽  
Deposition Rate ◽  
Rate Dependence ◽  
Argon Pressure ◽  
Substrate Bias ◽  
Film Composition ◽  
Bias Potential ◽  
Target Composition ◽  
Sensing Applications

82% Ni-Fe films have been prepared using Radio frequency (R.F) sputtered, R.F induced substrate bias. The results presented are of study of sputter films deposition at various RF substrate bias conditions so that suitable sputtering rate with optimum (target) composition could be determined for magnetoresistive sensing applications. Films have been sputtered with substrate temperature of 200° C, sputter gas (argon) pressure of 10mTorr with film thicknesses near 1000 °A. Substrate bias potential in the range 0 V to -400 V is varied in order to determine its dependence upon film composition and deposition rate. The result presented indicates the strong bias dependence upon film composition and deposition rate with most useful films for the application in concern could be produced at substrate bias potential in the range of -80 V to -120 V.

scholarly journals Fabrication, micro-structure characteristics and transport properties of co-evaporated thin films of Bi2Te3 on AlN coated stainless steel foils

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Aziz Ahmed ◽  
Seungwoo Han
Keyword(s):  
Thin Film ◽  
Crystal Structure ◽  
Thin Films ◽  
Stainless Steel ◽  
Substrate Temperature ◽  
Transport Properties ◽  
Structural Defects ◽  
Film Composition ◽  
High Substrate ◽  
Foil Substrate

AbstractN-type bismuth telluride (Bi2Te3) thin films were prepared on an aluminum nitride (AlN)-coated stainless steel foil substrate to obtain optimal thermoelectric performance. The thermal co-evaporation method was adopted so that we could vary the thin film composition, enabling us to investigate the relationship between the film composition, microstructure, crystal preferred orientation and thermoelectric properties. The influence of the substrate temperature was also investigated by synthesizing two sets of thin film samples; in one set the substrate was kept at room temperature (RT) while in the other set the substrate was maintained at a high temperature, of 300 °C, during deposition. The samples deposited at RT were amorphous in the as-deposited state and therefore were annealed at 280 °C to promote crystallization and phase development. The electrical resistivity and Seebeck coefficient were measured and the results were interpreted. Both the transport properties and crystal structure were observed to be strongly affected by non-stoichiometry and the choice of substrate temperature. We observed columnar microstructures with hexagonal grains and a multi-oriented crystal structure for the thin films deposited at high substrate temperatures, whereas highly (00 l) textured thin films with columns consisting of in-plane layers were fabricated from the stoichiometric annealed thin film samples originally synthesized at RT. Special emphasis was placed on examining the nature of tellurium (Te) atom based structural defects and their influence on thin film properties. We report maximum power factor (PF) of 1.35 mW/m K2 for near-stoichiometric film deposited at high substrate temperature, which was the highest among all studied cases.

Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Anton A. Komlev ◽  
Ekaterina A. Minzhulina ◽  
Vladislav V. Smirnov ◽  
Viktor I. Shapovalov
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Current Density ◽  
Argon Pressure ◽  
Titanium Target

Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

2015 ◽  
Vol 574 ◽  
pp. 71-77 ◽  
Author(s):  
A.Y. Chen ◽  
Y. Bu ◽  
Y.T. Tang ◽  
Y. Wang ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Rate Dependence ◽  
Orientation Growth

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

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