Deposition-rate dependence of orientation growth and crystallization of Ti thin films prepared by magnetron sputtering

2015 ◽  
Vol 574 ◽  
pp. 71-77 ◽  
Author(s):  
A.Y. Chen ◽  
Y. Bu ◽  
Y.T. Tang ◽  
Y. Wang ◽  
F. Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Rate Dependence ◽  
Orientation Growth

scholarly journals Residual Oxygen Effects on the Properties of MoS2 Thin Films Deposited at Different Temperatures by Magnetron Sputtering

Crystals ◽  
2021 ◽  
Vol 11 (10) ◽  
pp. 1183
Author(s):  
Peiyu Wang ◽  
Xin Wang ◽  
Fengyin Tan ◽  
Ronghua Zhang
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Deposition Temperature ◽  
Energy Dispersive Spectrometer ◽  
Rf Magnetron Sputtering ◽  
Glass Substrates ◽  
Different Temperatures ◽  
Oxygen Atoms

Molybdenum disulfide (MoS2) thin films were deposited at different temperatures (150 °C, 225 °C, 300 °C, 375 °C, and 450 °C) on quartz glass substrates and silicon substrates using the RF magnetron sputtering method. The influence of deposition temperature on the structural, optical, electrical properties and deposition rate of the obtained thin films was investigated by X-ray diffraction (XRD), Energy Dispersive Spectrometer (EDS), Raman, absorption and transmission spectroscopies, a resistivity-measuring instrument with the four-probe method, and a step profiler. It was found that the MoS2 thin films deposited at the temperatures of 150 °C, 225 °C, and 300 °C were of polycrystalline with a (101) preferred orientation. With increasing deposition temperatures from 150 °C to 300 °C, the crystallization quality of the MoS2 thin films was improved, the Raman vibrational modes were strengthened, the deposition rate decreased, and the optical transmission and bandgap increased. When the deposition temperature increased to above 375 °C, the molecular atoms were partially combined with oxygen atoms to form MoO3 thin film, which caused significant changes in the structural, optical, and electrical properties of the obtained thin films. Therefore, it was necessary to control the deposition temperature and reduce the contamination of oxygen atoms throughout the magnetron sputtering process.

Effect of d.c. bias on the deposition rate using r.f.–d.c. coupled magnetron sputtering for SnNx thin films

Vacuum ◽  
2000 ◽  
Vol 59 (2-3) ◽  
pp. 764-770 ◽  
Author(s):  
R Kamei ◽  
T Migita ◽  
T Tanaka ◽  
K Kawabata
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate

scholarly journals Modulation of argon pressure as an option to control transmittance and resistivity of ZnO:Al films deposited by DC magnetron sputtering: on the dark yellow films at 10-7 Torr base pressures

2018 ◽  
Vol 64 (6) ◽  
pp. 566 ◽  
Author(s):  
Jorge Alberto García Valenzuela ◽  
Dagoberto Cabrera-German ◽  
Marcos Cota-Leal ◽  
Guillermo Suárez-Campos ◽  
Miguel Martínez-Gil ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Base Pressure ◽  
Argon Pressure ◽  
Oxygen Mixture ◽  
Optical And Electrical Properties ◽  
Deposition Pressure ◽  
Argon Gas

In a previous paper, we reported that thin films of ZnO:Al [aluminum-zinc oxide (AZO)] deposited after achieving a very low base pressure [from 4.0×10–7 Torr (5.6×10–5 Pa) to 5.7×10–7 Torr (7.6×10–5 Pa)] result dark yellow in color and are resistive. These are undesirable characteristics for the application of AZO thin films as front electrodes in solar cells. However, given the increasingly tendency in the acquisition of equipment that allow us to reach excellent vacuum levels, it is necessary to find the deposition conditions that lead to an improving of transmittance without greatly impacting the electrical properties of materials deposited after achieving these levels of vacuum. In this way, the present work is focused on AZO thin films deposited after achieving a very low base pressure value: 4.2×10–7 Torr (5.6×10–5 Pa). For this, we studied the effect of the variation of the oxygen volume percent in the argon/oxygen mixture (by maintaining the deposition pressure constant) and the effect of deposition pressure with only argon gas on the main properties of AZO thin films. The depositions were done at room temperature on glass substrates by direct-current magnetron sputtering with a power of 120 W (corresponding to a power density of 2.63 W/cm2). As results, we found that the variation of deposition pressure with only argon gas is a good option for the control of optical and electrical properties, since the addition of oxygen, although improves transmittance, greatly impacts on the electrical properties. Furthermore, an interesting correlation was found between the optical and electrical properties and the chemical composition of the AZO films, the latter depending on the argon pressure (for this, a careful X-ray photoelectron spectroscopy analysis was performed). Also, the inverse relationship between crystallinity and deposition rate was confirmed, in which deposition rate inversely depends on argon pressure.

scholarly journals Deposition Rate of Ni Thin Films by Modified r.f. Magnetron Sputtering.

Shinku ◽  
2000 ◽  
Vol 43 (3) ◽  
pp. 311-313
Author(s):  
Takeshi HARADA ◽  
Hiroshi ASAHARA ◽  
Tomohiko KAWAMURA ◽  
Yutaka SATO ◽  
Syogo SHIMAMOTO ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate

Preparation and Characterization of 70TeO2-30WO3 Glass Thin Films by Radio-Frequency Magnetron Sputtering Method

2007 ◽  
Vol 124-126 ◽  
pp. 487-490 ◽  
Author(s):  
Jin Hyeok Kim ◽  
Ki Young Yoo ◽  
Sang Hoon Shin ◽  
Sun Hyun Youn ◽  
Jong Ha Moon
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Radio Frequency ◽  
Deposition Rate ◽  
Room Temperature ◽  
Processing Parameters ◽  
Radio Frequency Magnetron ◽  
Refractive Indices ◽  
Bandgap Energy ◽  
Radio Frequency Magnetron Sputtering

70TeO2-30WO3 glass thin films were fabricated using radio-frequency magnetron sputtering method and the effects of processing parameters on the growth rate, the surface morphologies, the crystallinity, and refractive indices of thin films have been investigated using AFM, XRD, SEM, and UV-Vis-IR spectrometer. Amorphous glass thin films with surface roughness of 4~6 nm could be formed only at room temperature and crystalline WO3 phase was observed in all the films prepared at above the room temperature. The deposition rate strongly depended on the processing parameters. It increased with increasing rf power and with decreasing processing pressure. Especially, it changed remarkably as varying the Ar/O2 gas flow ratio from 40sccm/0sccm to 0sccm/40sccm. When the films were formed in pure Ar atmosphere it shows a deposition rate of ~0.2 μm/h, whereas ~1.5 μm/h when the films was formed in pure O2 atmosphere. The refractive indices of TeO2-WO3glass thin films could be measured to be about 1.849~2.165 depending on the wavelength in the range of 500-1100 nm and the bandgap energy of glass thin film was ~3.34 eV.

scholarly journals Discharge Characteristics and Effect of DC Bias on the Deposition Rate of Ni Thin Films Using RF-DC Coupled Magnetron Sputtering.

Shinku ◽  
2000 ◽  
Vol 43 (3) ◽  
pp. 307-310
Author(s):  
Yasuo MIKAMI ◽  
Keiji YAMADA ◽  
Akio OHNARI ◽  
Toru DEGAWA ◽  
Takeshi TANAKA ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Discharge Characteristics ◽  
Dc Bias

Enhanced Deposition Rate of Photo-Induce Hydrophilic TiO2 Thin Films Prepared by Pulsed DC Reactive Magnetron Sputtering

2013 ◽  
Vol 770 ◽  
pp. 271-274
Author(s):  
K. Aiempanakit ◽  
S. Phongphao ◽  
S. Preechanchueong ◽  
M. Horprathum ◽  
P. Eiamchai ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Uv Light ◽  
Film Deposition ◽  
Reactive Magnetron Sputtering ◽  
High Rate ◽  
Reactive Magnetron ◽  
Pulsed Dc ◽  
Mesh Grid

Based on recent discovery of high-rate reactive magnetron sputtering, which was a key requirement for production of coating industry, this study focused on enhanced deposition rate of TiO2 films for photo-induce hydrophilic applications. The TiO2 thin films were reactively sputtered, which a pulsed DC source, from high-purity (99.995%) titanium (Ti) target on glass and silicon (100) and wafer substrates. During the deposition, a mesh grid cover was installed on the sputtering source with varying argon gas flow rates. Properties of the TiO2 films were compared between deposition with and without a mesh grid cover. The microstructure of the TiO2 films was studies by grazing-incidence X-ray diffraction (GIXRD) and field-emission scanning electron microscope (FE-SEM). The optical properties were determined by UV-Vis spectrophotometer. The contact angle measurement was used to determine the hydrophilicity of the films after exposing to UV light. For using the mesh grid during film deposition, it was found that the deposition rate of the TiO2 films was increased in oxide mode with a small grain size. In this case, the TiO2 films showed high transparent and good photo-induced hydrophilic properties.

Preferential orientation growth of ITO thin film on quartz substrate with ZnO buffer layer by magnetron sputtering technique

2017 ◽  
Vol 31 (16-19) ◽  
pp. 1744065 ◽  
Author(s):  
Wenhan Du ◽  
Jingjing Yang ◽  
Chao Xiong ◽  
Yu Zhao ◽  
Xifang Zhu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Buffer Layer ◽  
Quartz Substrate ◽  
Contact Layer ◽  
Preferential Orientation ◽  
Zno Thin Film ◽  
Ito Thin Films ◽  
Orientation Growth

In order to improve the photoelectric transformation efficiency of thin-film solar cells, one plausible method was to improve the transparent conductive oxides (TCO) material property. In-doped tin oxide (ITO) was an important TCO material which was used as a front contact layer in thin-film solar cell. Using magnetron sputtering deposition technique, we prepared preferential orientation ITO thin films on quartz substrate. XRD and SEM measurements were used to characterize the crystalline structure and morphology of ITO thin films. The key step was adding a ZnO thin film buffer layer before ITO deposition. ZnO thin film buffer layer increases the nucleation center numbers and results in the (222) preferential orientation growth of ITO thin films.

Deposition of Transparent Niobium Oxide Thin Film by DC Reactive Magnetron Sputtering

2016 ◽  
Vol 675-676 ◽  
pp. 217-220
Author(s):  
Narong Sangwaranatee ◽  
Mati Horprathum ◽  
Jakrapong Kaewkhao
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Deposition Rate ◽  
Flow Rate ◽  
Niobium Oxide ◽  
Oxygen Flow Rate ◽  
Reactive Magnetron Sputtering ◽  
Oxygen Flow ◽  
Reactive Magnetron ◽  
Dc Reactive Magnetron Sputtering

Transparent niobium oxide thin films were prepared by dc reactive magnetron sputtering under different oxygen flow rate. The niobium oxide thin films have been deposited on silicon wafer and glass substrate from a 99.99% pure niobium target at room temperature. The films were characterized to obtain the relationship between oxygen flow rate and deposition rate, structural, morphology and optical. The result show that the deposition rate decreased with increasing the oxygen flow rate. However, the transmittance spectrum percentage increases with increasing the oxygen flow rate.

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