Influence of argon pressure and current density on substrate temperature during magnetron sputtering of hot titanium target

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Anton A. Komlev ◽  
Ekaterina A. Minzhulina ◽  
Vladislav V. Smirnov ◽  
Viktor I. Shapovalov
Keyword(s):  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Current Density ◽  
Argon Pressure ◽  
Titanium Target

Technological Parameters and Electrical Properties of Ti/TiN Multilayer Films Prepared by Magnetron Sputtering

2010 ◽  
Vol 654-656 ◽  
pp. 1752-1755
Author(s):  
Min Hu ◽  
Ying Liu ◽  
Zhen Quan Lai
Keyword(s):  
Electrical Resistivity ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Sheet Resistance ◽  
Current Density ◽  
Multilayer Films ◽  
Technological Parameters ◽  
Modulation Period ◽  
Number Of Cycles

A series of Ti/TiN multilayer films was deposited on Si substrates by DC reactive magnetron sputtering process. The influence of sputtering current density and substrate temperature on cycle membrane structure and its electrical properties was investigated in this study. The results show that: when the current density is 0.4A, the sheet resistance and electrical resistivity of the film are of the minimum value. The sheet resistance and electrical resistivity of the film decrease with an increase of substrate temperature. Therefore, sputtering current density should be controlled between 0.3-0.4A, while the substrate temperature should be above 400°C. For a given modulation period and modulation ratio, with the change of number of cycles the films can present a unique set of colours, and its electrical resistivity decreases with an increase in the number of cycles. When the number of cycles is greater than 4, the sheet resistance is significantly reduced, and when the number is greater than 15, the prepared films come off. To keep the number of cycles at five and change the modulation period, it is shown that a minimum electrical resistivity exists.

scholarly journals Effect of Voltage Pulse Width and Synchronized Substrate Bias in High-Power Impulse Magnetron Sputtering of Zirconium Films

Coatings ◽  
2020 ◽  
Vol 11 (1) ◽  
pp. 7
Author(s):  
Chin-Chiuan Kuo ◽  
Chun-Hui Lin ◽  
Jing-Tang Chang ◽  
Yu-Tse Lin
Keyword(s):  
Growth Rate ◽  
Magnetron Sputtering ◽  
High Power ◽  
Pulse Width ◽  
Film Growth ◽  
Highly Charged Ions ◽  
Argon Pressure ◽  
Hexagonal Prism ◽  
Film Growth Rate ◽  
Charged Ions

The Zr film microstructure is highly influenced by the energy of the plasma species during the deposition process. The influences of the discharge pulse width, which is the key factor affecting ionization of sputtered species in the high-power impulse magnetron sputtering (HiPIMS) process, on the obtained microstructure of films is investigated in this research. The films deposited at different argon pressure and substrate biasing are compared. With keeping the same average HiPIMS power and duty cycle, the film growth rate of the Zr film decreases with increasing argon pressure and enhancing substrate biasing. In addition, the film growth rate decreases with the elongating HiPIMS pulse width. For the deposition at 1.2 Pa argon, extending the pulse width not only intensifies the ion flux toward the substrate but also increases the fraction of highly charged ions, which alter the microstructure of films from individual hexagonal prism columns into a tightly connected irregular column. Increasing film density leads to higher hardness. Sufficient synchronized negative substrate biasing and longer pulse width, which supports higher mobility of adatoms, causes the preferred orientation of hexagonal α-phase Zr films from (0 0 0 2) to (1 0 1¯ 1). Unlike the deposition at 1.2 Pa, highly charged ions are also found during the short HiPIMS pulse width at 0.8 Pa argon.

scholarly journals Time saving technique for studying thermal processes in magnetron sputtering of titanium target

2021 ◽  
Vol 1799 (1) ◽  
pp. 012021
Author(s):  
V A Pavlov ◽  
V I Shapovalov ◽  
D S Shestakov ◽  
A V Rudakov ◽  
A E Shabalin
Keyword(s):  
Magnetron Sputtering ◽  
Thermal Processes ◽  
Time Saving ◽  
Titanium Target

Substrate Temperature and La0.9Sr0.1Ga0.8Mg0.2O3-δ Electrolyte Film Growth by Radio Frequency Magnetron Sputtering

2015 ◽  
Vol 833 ◽  
pp. 127-133
Author(s):  
Jie Yu ◽  
Jie Xing ◽  
Xiu Hua Chen ◽  
Wen Hui Ma ◽  
Rui Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Film Growth ◽  
Rf Magnetron Sputtering ◽  
X Ray Diffraction ◽  
X Ray ◽  
Electrolyte Film ◽  
Porous Anode

La0.9Sr0.1Ga0.8Mg0.2O3-δ (LSGM) electrolyte thin films were fabricated on La0.7Sr0.3Cr0.5Mn0.5O2.75 (LSCM) porous anode substrates by Radio Frequency (RF) magnetron sputtering method. The compatibility between LSGM and LSCM was examined. Microstructures of LSGM thin films fabricated were observed by scanning electron microscope (SEM). The effect of substrate temperature on LSGM thin films was clarified by X-ray Diffraction (XRD). Deposition rate increases firstly at the range of 50°C~150°C, and then decreases at the range of 150°C ~300°C. After annealing, perovskite structure with the same growth orientation forms at different substrate temperature. Crystallite size decreases at first, to the minimum point at 150°C, then increases as substrate temperature rises.

scholarly journals Co/Cu/Co Pseudo Spin-Valve System Prepared by Magnetron Sputtering with Different Argon Pressure

2015 ◽  
Vol 644 ◽  
pp. 211-214 ◽  
Author(s):  
A.V. Svalov ◽  
A.N. Sorokin ◽  
P.A. Savin ◽  
Alfredo García-Arribas ◽  
A. Fernández ◽  
...  
Keyword(s):  
Magnetron Sputtering ◽  
Spin Valve ◽  
Spin Rotation ◽  
Argon Pressure ◽  
Dc Magnetron Sputtering ◽  
Soft Layer ◽  
Valve System ◽  
Magnetic Layers ◽  
Moderate Field ◽  
The Difference

Thin Co films were fabricated by DC magnetron sputtering. The effect of argon pressure on the microstructure, surface morphology and magnetic properties of the samples was systematically studied. It was found that with the increase of argon pressure, the sharpness of the crystalline texture of the samples declines, the roughness of film surfaces and the coercivity of the films increase. Based on these results, a Co/Cu/Co pseudo spin-valve system was designed and the corresponding structures were fabricated. The difference in coercivity of magnetic layers was obtained by deposition of the Co layers at different Ar pressures. Change of the resistance of this trilayer is induced at a moderate field by the spin rotation in the soft layer with lower coercivity.

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