A Study of the Solid-State Reaction for Polishing Sapphires

2012 ◽  
Vol 497 ◽  
pp. 195-199 ◽  
Author(s):  
Qian Fa Deng ◽  
Zhi Xiong Zhou ◽  
Zhao Zhong Zhou ◽  
Ju Long Yuan ◽  
Ji Cui Wang
Keyword(s):  
Solid State ◽  
Surface Quality ◽  
Material Removal Rate ◽  
Surface Finish ◽  
Solid State Reaction ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Quality Requirements

As sapphire is an important substrate material, stringent surface quality requirements (i.e., surface finish and flatness) are required. In order to acquire the higher material removal rate and the better surface quality of sapphire, the solid state-reaction were introduced in this paper; abrasive of SiO2 and SiO2 with mixing the MgF2 power were compared to polish sapphire. The result showed that abrasive of SiO2 with mixing the MgF2 can obtain higher material removal rate and better surface quality. The result of the pr

Impact of slurry pH on material removal rate and surface quality of polished fused silica

Optifab 2017 ◽  
2017 ◽  
Author(s):  
Cedric Maunier ◽  
Melanie Redien ◽  
Bertrand Remy ◽  
Jérôme Néauport ◽  
Karine Poliakoff-Leriche
Keyword(s):  
Surface Quality ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Fused Silica

scholarly journals Assessment of CVD- and PVD-Coated Carbides and PVD-Coated Cermet Inserts in the Optimization of Surface Roughness in Turning of AISI 1045 Steel

Materials ◽  
2020 ◽  
Vol 13 (22) ◽  
pp. 5231
Author(s):  
Evandro Paese ◽  
Martin Geier ◽  
Fabiano R. Rodrigues ◽  
Tadeusz Mikolajczyk ◽  
Mozammel Mia
Keyword(s):  
Surface Quality ◽  
Material Removal Rate ◽  
Vapor Deposition ◽  
Material Removal ◽  
Removal Rate ◽  
Controllable Factors ◽  
Aisi 1045 Steel ◽  
Aisi 1045 ◽  
1045 Steel ◽  
Coated Carbide

In this study, an experimental and statistic investigation approach based on analysis of variance (ANOVA) and response surface methodology (RSM) techniques was performed to find the significant main effects and two-factor interaction effects and to determine how the controllable factors such as cutting speed, feed rate, depth of cut (DOC), tool nose radius, substrate and coating method of cutting tools influence surface quality in turning of AISI 1045 steel. The first optimal or near-optimal conditions for the quality of the generated surface and the second ones, including maximum material removal rate, were established using the proposed regression equations. The group mean roughness of the turned workpieces was lower from using chemical vapor deposition (CVD)-coated carbide inserts than the group means of other types of inserts; however they could not achieve the specific lowest roughness. The physical vapor deposition (PVD)-coated carbide and cermet inserts achieved the best surface quality when the specific combinations within the range interval of controllable factors were used in the experiment, showing that they may be applied to finish turning processes or even to particular high material removal rate conditions associated with the lowest roughness.

Comparison of Processing Features between Semi Bonded Abrasive Lapping and Loose Abrasive Lapping

2009 ◽  
Vol 416 ◽  
pp. 439-442
Author(s):  
Xun Lv ◽  
Ju Long Yuan ◽  
Dong Hui Wen
Keyword(s):  
Surface Roughness ◽  
Material Removal Rate ◽  
Material Removal ◽  
Removal Rate ◽  
Processing Parameters ◽  
Good Surface ◽  
Ultra Precision ◽  
New Processing ◽  
Short Time

Semi bonded abrasive lapping is an effective ultra-precision lapping method. It can obtain good surface quality of workpiece in short time. This paper focused on the differences of processing features by comparing semi bonded abrasive lapping and loose abrasive lapping in several groups processing parameters. The results showed that the surface roughness of workpiece in semi bonded abrasive lapping was far superior to that of loose abrasive lapping in same processing parameters. And the MRR (material removal rate) of semi bonded abrasive lapping was slightly lower than that of loose abrasive lapping. For these features of semi bonded abrasive, a new processing flow would also be proposed in this paper.

scholarly journals Focused Ion Beam Milling of Single-Crystal Sapphire with A-, C-, and M-Orientations

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2871
Author(s):  
Qiuling Wen ◽  
Xinyu Wei ◽  
Feng Jiang ◽  
Jing Lu ◽  
Xipeng Xu
Keyword(s):  
Single Crystal ◽  
Surface Quality ◽  
Material Removal ◽  
Focused Ion Beam ◽  
Removal Rate ◽  
Ion Beam ◽  
Crystal Orientations ◽  
Aluminum Ions ◽  
Single Crystal Sapphire

Sapphire substrates with different crystal orientations are widely used in optoelectronic applications. In this work, focused ion beam (FIB) milling of single-crystal sapphire with A-, C-, and M-orientations was performed. The material removal rate (MRR) and surface roughness (Sa) of sapphire with the three crystal orientations after FIB etching were derived. The experimental results show that: The MRR of A-plane sapphire is slightly higher than that of C-plane and M-plane sapphires; the Sa of A-plane sapphire after FIB treatment is the smallest among the three different crystal orientations. These results imply that A-plane sapphire allows easier material removal during FIB milling compared with C-plane and M-plane sapphires. Moreover, the surface quality of A-plane sapphire after FIB milling is better than that of C-plane and M-plane sapphires. The theoretical calculation results show that the removal energy of aluminum ions and oxygen ions per square nanometer on the outermost surface of A-plane sapphire is the smallest. This also implies that material is more easily removed from the surface of A-plane sapphire than the surface of C-plane and M-plane sapphires by FIB milling. In addition, it is also found that higher MRR leads to lower Sa and better surface quality of sapphire for FIB etching.

scholarly journals Study on the Influence of Sapphire Crystal Orientation on Its Chemical Mechanical Polishing

2020 ◽  
Vol 10 (22) ◽  
pp. 8065
Author(s):  
Linlin Cao ◽  
Xiang Zhang ◽  
Julong Yuan ◽  
Luguang Guo ◽  
Teng Hong ◽  
...  
Keyword(s):  
Material Removal Rate ◽  
Material Properties ◽  
Chemical Mechanical Polishing ◽  
Crystal Orientation ◽  
Material Removal ◽  
Removal Rate ◽  
Substrate Material ◽  
Mechanical Polishing ◽  
Sapphire Crystal ◽  
Research Objects

Sapphire has been the most widely used substrate material in LEDs, and the demand for non-C-planes crystal is increasing. In this paper, four crystal planes of the A-, C-, M- and R-plane were selected as the research objects. Nanoindentation technology and chemical mechanical polishing technology were used to study the effect of anisotropy on material properties and processing results. The consequence showed that the C-plane was the easiest crystal plane to process with the material removal rate of 5.93 nm/min, while the R-plane was the most difficult with the material removal rate of 2.47 nm/min. Moreover, the research results have great guiding significance for the processing of sapphire with different crystal orientations.

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