scholarly journals The Effect of Etching Time On Structural Properties of Porous Quaternary AlInGaN Thin Films

2021 ◽  
Vol 19 (50) ◽  
pp. 77-83
Author(s):  
Ghasaq Ali Tomaa ◽  
Alaa Jabbar Ghazai
Keyword(s):  
Porous Silicon ◽  
Crystal Size ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
Homogeneous Pattern

Using photo electrochemical etching technique (PEC), porous silicon (PS) layers were produced on n-type silicon (Si) wafers to generate porous silicon for n-type with an orientation of (111) The results of etching time were investigated at: (5,10,15 min). X-ray diffraction experiments revealed differences between the surface of the sample sheet and the synthesized porous silicon. The largest crystal size is (30 nm) and the lowest crystal size is (28.6 nm) The analysis of Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscope (FESEM) were used to research the morphology of porous silicon layer. As etching time increased, AFM findings showed that root mean square (RMS) of roughness and porous silicon grain size decreased and FESEM showed a homogeneous pattern and verified the formation of uniform porous silicon.

scholarly journals The effect of current density on the structures and photoluminescence of n-type porous silicon

2019 ◽  
Vol 15 (34) ◽  
pp. 15-28
Author(s):  
Isam M. Ibrahim
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Current Density ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Etching Technique ◽  
Force Microscopy ◽  
Homogeneous Pattern

Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased and FESEM showed that a homogeneous pattern and confirms the formation of uniform porous silicon. The chemical bonding and structure were investigated by using Fourier transformation infrared spectroscopy (FTIR). The band gap of the samples obtained from photoluminescence (PL). These results showed that the band gap of porous silicon increase with increasing porosity.

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

STUDY OF POROUS SILICON SURFACE PROPERTIES

1996 ◽  
Vol 03 (02) ◽  
pp. 1235-1239
Author(s):  
K. W. CHEAH ◽  
T. Y. LEUNG ◽  
M. H. CHAN ◽  
S. K. SO
Keyword(s):  
Porous Silicon ◽  
Surface States ◽  
Silicon Layer ◽  
Structural Difference ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Free Standing ◽  
Force Microscopy ◽  
Photothermal Deflection Spectroscopy ◽  
Atomic Force

Porous silicon is a material with a coral-like structure which has a fractal surface. To study these aspects of porous silicon and its relationship with the luminescence property, we have used atomic force microscopy (AFM). Samples were prepared using either pure HF or HF diluted with ethanol. From the results of AFM, distinct structural difference was observed from samples prepared by these two etchants. If we relate the structures to their respective photoluminescence spectra, it appears that finer structure produced shorter wavelength peak photoluminescence. However, the columns of the samples were too large for one to attribute the luminescence to quantum confinement only. Hence, an alternative model may be required to explain the luminescence mechanism. We have also observed that the composition of the etchant can also affect the evolution of the fractal dimension with respect to etching time. Probing of the surfcace electron states was performed using photothermal deflection spectroscopy (PDS). In order to ensure that only porous silicon layer was probed, free-standing films of various porosity were produced for the PDS measurement. The probe energy range was from 0.56 eV to 2.5 eV so that both the bulk states and the surface states were probed. The results showed that there is a clear blueshift of the energy band gap with respect to porosity, and the absorption coefficient decreases with porosity increase at a fixed photon energy. Overtones of hydrides and fluorides of silicon were also observed.

scholarly journals Effect of SnS Thin Film on the Performance of Porous Silicon Photodiode

2016 ◽  
Vol 63 ◽  
pp. 67-76 ◽  
Author(s):  
Ahmed N. Abd ◽  
Wasna'a M. Abdulridha ◽  
Mohammed Odda Dawood
Keyword(s):  
Thin Film ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
X Ray Diffraction ◽  
Silicon Photodiode ◽  
Force Microscopy ◽  
Atomic Force ◽  
Evaporation Technique

In this study, Al/SnS/PS/n-Si/Al photodiode was fabricated and investigated. SnS thin film were prepared by thermal evaporation technique on porous silicon layer which prepared by anodization technique at 32mA/cm2 etching current density and etching time 15min.The characteristics of porous silicon and SnS were investigated by using x-ray diffraction XRD, atomic force microscopy AFM, Fourier transformation infrared spectroscopy FT-IR.Dark and illuminated current-voltage I-V characteristics, spectral responsivity, specific detectivity of photodiode were investigated after depositing. Significant improvement in photosensitivity and detectivity of porous silicon photodiode after SnS deposition on porous silicon was noticed.

Effects of Electrochemical Etching Time on the Performance of Porous Silicon Solar Cells on Crystalline n-Type (100) and (111)

2017 ◽  
Vol 46 ◽  
pp. 45-56 ◽  
Author(s):  
Khalid Omar ◽  
Khaldun A. Salman
Keyword(s):  
Solar Cells ◽  
Porous Silicon ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Silicon Solar Cells ◽  
Etching Time ◽  
Crystalline Silicon Solar Cells ◽  
Coating Layers

Electrochemical etching was carried out to produce porous silicon based on crystalline silicon n-type (100) and (111) wafers. Etching times of 10, 20, and 30 min were applied. Porous silicon layer was used as anti-reflection coating on crystalline silicon solar cells. The optimal etching time is 20 min for preparing porous silicon layers based on crystalline silicon n-type (100) and (111) wafers. Nanopores with high porosity were produced on the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers with average diameters of 5.7 and 5.8 nm, respectively. Average crystallite sizes for the porous silicon layer based on crystalline silicon n-type (100) and (111) wafers were 20.57 and 17.45 nm at 20 and 30 min, respectively, due to the increase in broadening of the full width at half maximum. Photoluminescence peaks for porous silicon layers based on crystalline silicon n-type (100) and (111) wafers increased with growing porosity and a great blue shift in luminescence. The minimum effective coefficient of reflection was obtained from porous silicon layers based on the crystalline silicon n-type (100) wafer compared with n-type (111) wafer and as-grown at different etching times. Porous silicon layers based on the crystalline silicon n-type (100) wafer at 20 min etching time exhibited excellent light trapping at wavelengths ranging from 400 to 1000 nm. Thus, fabricated crystalline silicon solar cells based on porous silicon (100) anti-reflection coating layers achieved the highest efficiency at 15.50% compared to porous silicon (111) anti-reflection coating layers. The efficiency is characterized applying I-V characterization system under 100 mW/cm2 illumination conditions.

Effect of Etching Time on Electrical and Optical Properties of Porous Silicon

2013 ◽  
Vol 667 ◽  
pp. 397-401
Author(s):  
S.F.M. Yusop ◽  
N. Azaman ◽  
Hartini Ahmad Rafaie ◽  
S. Amizam ◽  
Saifollah Abdullah ◽  
...  
Keyword(s):  
Optical Properties ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Constant Current ◽  
Voltage Source ◽  
Etching Time ◽  
Constant Current Density ◽  
Wafer Substrate

The characterized on porous silicon layer by using photoluminescence (PL) and I-V measurement (I-V) has been done. Porous silicon was formed by electrochemical etching on (100) p-type Si wafer substrate with the constant current density (20mA/cm2) and variable the etching time. The samples ware prepared under various etching time and properties of porous silicon depend on an etching time. Porous silicon has been used in humidity sensors to detect humidity through changes of its electrical properties. The samples of porous silicon were characterized by using Photoluminescence Spectroscopy (PL) that used to characterize optical properties while I-V Measurement (I-V) used to characterize porous silicon junction properties using a linear voltage source. The result shows PL intensity is increase while the wavelength is decrease for etching time of PSi is longer. For the I-V measurement result shows the etching time affect the resistance of sample due to its porosity.

scholarly journals Study of the Electrical Properties of Porous Silicon Prepared by Electrochemical Etching Technique

2019 ◽  
Vol 54 (5) ◽  
Author(s):  
Warood Kream Alaarage ◽  
Luma Hafedh Abed Oneiza ◽  
Mohanad Ghulam Murad Alzubaidi
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Ideality Factor ◽  
Thermal Emission ◽  
Electrochemical Etching ◽  
Point Of View ◽  
Etching Technique ◽  
Force Microscopy ◽  
Atomic Force ◽  
P Type

In our work, a P-type porous silicon (PSi) with orientation (100) have been prepared using the chemical etching method; the goal is to study the electrical properties of PSi samples prepared with completely different etching current (7, 9, 11 and 13) mA and glued for (15 min) anodization time. Depending on the atomic force microscopy (AFM) investigation, we notice the roughness of Si surface increases with increasing etching current because of increases within the dimension (diameter) of surface pits. The electrical and optoelectronic properties of prepared PSi, specifically capacitance-voltage (C-V), current-voltage (I-V), responsivity and detectivity, are analyzed. It had been found that electrical characteristics of porous Si samples measured in dark (Id) and below illumination (IPh) will be fitted well by the equations of thermal emission. From this point of view, Schottky barrier height (ɸB) and ideality factor (n) of made-up photodetectors were calculated. We tended to determine from I-V characteristics of a dark, and illuminations that the pass current through the PSi layer reduced by increasing the etching current, as a result of increasing the electrical resistance of PSi layer and therefore the optimum value of ideality factor is (2.7), whereas from C-V characteristic we determined that in-built potential accumulated with increasing etching current. The results show that there are clear results for better performance of photodetectors.

scholarly journals Modification of Surface Properties of Silicon Wafers by Laser-Assisted Electrochemical Etching

2018 ◽  
Vol 80 ◽  
pp. 30-39
Author(s):  
Hasan A Hadi
Keyword(s):  
Porous Silicon ◽  
Optical Microscopy ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Diffraction Peak ◽  
Etching Time ◽  
Layer Formation ◽  
Xrd Patterns

In this paper, the structural properties of porous silicon layer PSL were reported. Photo-assisted (laser) electrochemical etching PECE technique used to fabrication PSL from n-type wafer silicon as a function of etching time. Optical microscopy OM image is confirmed that the surface topography of porous silicon layer formation was a mud-like structure. The porosity and thickness have been determined gravimetrically are varied from 61% to 82% and 7.2 µm to 9.4µm respectively. The XRD patterns show that one diffraction peak for all PSL through anodization duration and it is assigned to the (400) plane and data confirmed the porous silicon PS was nanocrystalline.

IMPROVING THE PHOTORESPONSE OF POROUS SILICON FOR SOLAR CELL APPLICATIONS BY EMBEDDING OF CdTe NANOPARTICLES

2017 ◽  
Vol 24 (Supp01) ◽  
pp. 1850012 ◽  
Author(s):  
IBRAHIM R. AGOOL ◽  
AHMED N. ABD ◽  
MOHAMMED O. DAWOOD ◽  
HARITH M. ABD AL-AMEER ◽  
NADIR F. HABUBI ◽  
...  
Keyword(s):  
Solar Cell ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Etching Time ◽  
Reverse Bias Voltage ◽  
Tunneling Microscopy ◽  
Laser Ablation In Liquid ◽  
Force Microscopy ◽  
Cdte Nanoparticles ◽  
Atomic Force

The present work is concerned with the preparation of thin films of nanocrystalline porous silicon (PSi) by the method of electrochemical etching. CdTe nanoparticles (NPs) have been prepared by utilizing the pulsed laser ablation in liquid. The measurements of tunneling microscopy, X-ray diffraction (XRD), Fourier transformation infrared spectroscopy (FTIR) and atomic force microscopy (AFE) were carried out and revealed that the PSi was nanostructured and the produced CdTe NPs were ball shaped, having good disposability. The diffusion of CdTe NPs on the properties of PSi solar cell assures that there was an improvement upon their properties. The relationship between [Formula: see text] and the reverse bias voltage was observed to be linear. Values of the built-in potential were observed to be dependent on the laser fluence, current density and the etching time.

scholarly journals Effect of photo chemical etching and electro chemical etching on the topography of porous silicon wafers surfaces

2019 ◽  
Vol 24 (4) ◽  
pp. 52
Author(s):  
Amjad Hussein Jassem
Keyword(s):  
Porous Silicon ◽  
Layer Thickness ◽  
Porous Layer ◽  
Chemical Etching ◽  
Chemical Method ◽  
Pore Diameter ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time

In This research we study the effect of photo chemical etching and electrochemical etching on topography of porous silicon surfaces, the results showed that photo chemical etching produced roughness silicon layer which can have thickness be less of porous silicon layer which is produced by electro chemical etching When all the wafers have same etching time  and hydrofluoric solution (HF) concentration, the wafers have same resistance (10 Ω.cm). Also the results showed the roughness of porous silicon layers produced  by  electro chemical method which is bigger than the roughness of porous silicon layers produced by photo chemical method and the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by electro chemical method (1.55(µm) ((0.99(µm)) and ((1.21(µm) respectively), the results of roughness of porous silicon layers, Pore diameter and porous layer thickness were produced by photo chemical method 0.63)) nm -1.55)) (µm) ),so the (84.9 (nm)- and (3.94(nm) respectively . This is reinforces because of using the electro chemical to etching the wafer surf ace of bulk silicon and changing it to roughness silicon surface  be share in success of many practicalities.   http://dx.doi.org/10.25130/tjps.24.2019.072

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