Thin Film Microcircuit Preparation in a Diamond Anvil Cell

2013 ◽  
Vol 690-693 ◽  
pp. 499-502
Author(s):  
Jia Wang ◽  
Bao Jia Wu
Keyword(s):  
Thin Film ◽  
Electrical Resistance ◽  
Diamond Anvil Cell ◽  
Protective Layer ◽  
Molybdenum Metal ◽  
Reversible Phase Transition ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Diamond Anvil ◽  
Reversible Phase

An effective and convenient method about molybdenum metal thin film microcircuit was developed on diamond anvil cell(DAC) under high pressure. Alumina film was used as the protective layer and sputtered on DAC. By using this method, we studied the electrical resistance variation about nanoparticles ZnS power up to 36GPa. The reversible phase transition had been reflected clearly by the electrical resistance measurements with sample.

J0420306 Evaluation of elastic property of Pt thin film at high pressures using picosecond ultrasound coupled with diamond anvil cell

2014 ◽  
Vol 2014 (0) ◽  
pp. _J0420306--_J0420306-
Author(s):  
Shu SEKIGUCHI ◽  
Nobutomo NAKAMURA ◽  
Mari EINAGA ◽  
Katsuya SHIMIZU ◽  
Atsushi MIYAKE ◽  
...  
Keyword(s):  
Thin Film ◽  
Elastic Property ◽  
Diamond Anvil Cell ◽  
High Pressures ◽  
Diamond Anvil

scholarly journals Electrical Resistance Variation of MWCNT/PMMA Composite for Gaseous Toluene Detection

2009 ◽  
Vol 42 (Supplement.) ◽  
pp. s238-s241 ◽  
Author(s):  
Amornwong Srisurichan ◽  
Adi Ilcham ◽  
Apinan Soottitantawat ◽  
Yongyuth Wanna ◽  
Noriaki Sano ◽  
...  
Keyword(s):  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Gaseous Toluene

Reversible phase transitions in Na2S under pressure: a comparison with the cation array in Na2SO4

2001 ◽  
Vol 57 (2) ◽  
pp. 151-156 ◽  
Author(s):  
A. Vegas ◽  
A. Grzechnik ◽  
K. Syassen ◽  
I. Loa ◽  
M. Hanfland ◽  
...  
Keyword(s):  
Room Temperature ◽  
Diamond Anvil Cell ◽  
Lattice Parameters ◽  
X Ray Diffraction ◽  
Rietveld Refinements ◽  
X Ray ◽  
Diamond Anvil ◽  
Binary Compounds ◽  
Reversible Phase

The structural behavior of the antifluorite Na2S, disodium sulfide, has been studied under pressure up to 22 GPa by in situ synchrotron X-ray diffraction experiments in a diamond anvil cell at room temperature. At approximately 7 GPa, Na2S undergoes a first phase transition to the orthorhombic anticotunnite (PbCl2) structure (Pnma, Z = 4). The lattice parameters at 8.2 GPa are a = 6.707 (5), b = 4.120 (3), c = 8.025 (4) Å. At approximately 16 GPa, Na2S undergoes a second transition adopting the structure of the Ni2In-type (P63/mmc, Z = 2). The lattice parameters at 16.6 GPa are a = 4.376 (18), c = 5.856 (9) Å. Both pressure-induced phases have been confirmed by full Rietveld refinements. An inspection of the cation array of Na2SO4 reveals that its Na2S subarray is also of the Ni2In-type. This feature represents a new example of how the cation arrangements in ternary oxides correspond to the topology of the respective binary compounds. We discuss analogies between the insertion of oxygen and the application of pressure.

scholarly journals Large Electrical Resistance Variation at Low Temperature in Transition Metal-Doped Ge Single Crystals

2015 ◽  
Vol 56 (9) ◽  
pp. 1362-1364 ◽  
Author(s):  
Jiyoun Choi ◽  
Jeongyong Choi ◽  
Sungyoul Choi ◽  
Jongphil Kim ◽  
Sunglae Cho
Keyword(s):  
Low Temperature ◽  
Transition Metal ◽  
Single Crystals ◽  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Metal Doped

Electrical resistance variation of carbon-nanotube networks due to surface modification of glass substrate

2010 ◽  
Vol 207 (8) ◽  
pp. 1912-1917
Author(s):  
Eui Yun Jang ◽  
Dong Kyun Seo ◽  
Seoho Jung ◽  
Taewoo Kim ◽  
Tae June Kang ◽  
...  
Keyword(s):  
Surface Modification ◽  
Carbon Nanotube ◽  
Glass Substrate ◽  
Electrical Resistance ◽  
Resistance Variation ◽  
Electrical Resistance Variation ◽  
Carbon Nanotube Networks
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