Electrical and Optical Properties of Electron Irradiated ZnO: Li Thin Films

2013 ◽  
Vol 699 ◽  
pp. 257-261 ◽  
Author(s):  
Balaji Biradar ◽  
V.M. Jali ◽  
B. Murali ◽  
S.B. Krupanidhi ◽  
Ganesh Sanjeev

The effects of 8 MeV electron irradiation (with variable fluence) on the electrical and optical properties of Lithium doped Zinc oxide thin films prepared by sol-gel synthesis are reported. There is a decrease in crystallinity and crystallite size with increase in fluence, as confirmed by XRD and SEM. We observe a decrease in transmittance, band gap and refractive index, while there is an increase in the extension coefficient with the fluence. I-V measurements have shown a decrease in leakage current and interestingly, the metal-semiconductor-metal (M-S-M) device shows only the ohmic behavior after irradiation.

2015 ◽  
Vol 1109 ◽  
pp. 549-553
Author(s):  
Shafura Karim ◽  
Uzer Mohd Noor ◽  
Mohamad Hafiz Mamat ◽  
Shuhaimi Abu Bakar ◽  
Salman A.H. Alrokayan ◽  
...  

Tin-doped Zinc Oxide (Sn-doped ZnO) thin films were prepared using zinc acetate dehydrate as a starting material by sol-gel immersion method. The doping concentrations were varied at 0 at.%, 0.5 at.%, 1.0 at.%, 2.0 at.%, 3.0 at.% and 4.0 at.%. The synthesized samples were characterized by current-voltage (I-V) measurement and UV-VISS spectrometer.


2011 ◽  
Author(s):  
Mohd Firdaus Bin Malek ◽  
Mohamad Hafiz Bin Mamat ◽  
Musa Bin Mohamed Zahidi ◽  
Zainizan Bin Sahdan ◽  
Zuraida Binti Khusaimi ◽  
...  

2014 ◽  
Vol 23 (4) ◽  
pp. 047805 ◽  
Author(s):  
Meng-Meng Cao ◽  
Xiao-Ru Zhao ◽  
Li-Bing Duan ◽  
Jin-Ru Liu ◽  
Meng-Meng Guan ◽  
...  

2021 ◽  
Vol 24 (3) ◽  
pp. 38-42
Author(s):  
Marwa Mudfer Alqaisi ◽  
◽  
Alla J. Ghazai ◽  

In this work, pure Zinc oxide and tin doped Zinc oxide thin films nanoparticles with various volume concentrations of 2, 4, 6, and 8V/V% were prepared by using the sol-gel method. The optical properties were investigated by using UV-Visible spectroscope, and the value exhibits the direct allowed transition. The average of transmittance was around ~(17-23) %in visible region. The optical energy band gap was calculated with wavelength (300-900) nm for pure ZnO and Sn doped ZnO thin films which decreases with increasing concentration from 3.4 eV to 3.1 eV respectively and red shift. The real dielectric(εr) and the imaginary dielectric εiare the same behavior of the refractive index(n) the extinction coefficient (k) respectively. The optical limiting properties were studied by using an SDL laser with a wavelength of 235 nm. ZnO and doping thin films an found efficient as optic limiting and depend on the concentration of the all samples.


2014 ◽  
Vol 70 (3) ◽  
pp. 500-505 ◽  
Author(s):  
C. J. Diliegros-Godines ◽  
R. Castanedo-Pérez ◽  
G. Torres-Delgado ◽  
O. Zelaya-Ángel

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