UJI UV-VIS LAPISAN TiO2/N2 UNTUK MENENTUKAN BAND GAP ENERGY

[Title: TEST UV-VIS LAYER TiO2/N2 FOR DETERMINING BAND GAP ENERGY] The effect of nitrogen doping variation on energy band gap in TiO2 layer grown by doctor blade technique. The TiO2/N2 layer was prepared with concentrations of 0%, 15%, 25% and 25% calcined at 500°C for 3 hours. Characterization of band gap energy by using the UV-Vis spectrometer at a wavelength range of 200 nm-700 nm. The band gap energy is obtained by using the Swanepoel equation and Touch Plot method. The results showed that doping of nitrogen can decrease the band gap energy of 3.9250 eV, 3.8750 eV, 3.8375 eV and 3.9125 eV, respectively. The smallest energy band gap is obtained at 25% concentration that is 3.8375eV. Keywords: Coating TiO2/N2, transmittance, Band gap energy

Fourier Transform Infrared Spectroscopy of Clay Size Fraction of Cretaceous-Tertiary Kaolins in the Douala Sub-Basin, Cameroon

The structural order of Cretaceous-Tertiary kaolins of the Douala Sub-Basin in Cameroon was determined in this study. This was achieved using Fourier Transform Infrared spectroscopy (FTIR) with attenuated total reflectance (ATR) on the Bomkoul, Dibamba, Ediki, Logbaba, Missole and Yatchika kaolins. Transmittance spectra of 20 samples were recorded in the mid-infrared regions (MIR). Results show that most of the kaolins had the four distinguishable bands in the hydroxyl (OH) stretching region, though the second transmittance band (3670 cm

Electrical and Optical Properties of Electron Irradiated ZnO: Li Thin Films

The effects of 8 MeV electron irradiation (with variable fluence) on the electrical and optical properties of Lithium doped Zinc oxide thin films prepared by sol-gel synthesis are reported. There is a decrease in crystallinity and crystallite size with increase in fluence, as confirmed by XRD and SEM. We observe a decrease in transmittance, band gap and refractive index, while there is an increase in the extension coefficient with the fluence. I-V measurements have shown a decrease in leakage current and interestingly, the metal-semiconductor-metal (M-S-M) device shows only the ohmic behavior after irradiation.