Fabrication of High Aspect Ratio Microscale Rod Arrays Using Metal Injection Molding

2013 ◽  
Vol 716 ◽  
pp. 430-433
Author(s):  
Won Sik Lee ◽  
Jin Man Jang ◽  
Berm Ha Cha ◽  
Se Hyun Ko
Keyword(s):  
Aspect Ratio ◽  
Injection Molding ◽  
Grain Growth ◽  
High Aspect Ratio ◽  
Metal Injection Molding ◽  
Aspect Ratios ◽  
Average Size ◽  
Rod Array

In this work, micro rod arrays of 50 um and 200 um in diameter, respectively, were fabricated by 316L metal injection molding. Acryl sacrificial mold was used for the 50 um rod array. Aspect ratios were about 8 and 6 in 50 um and 200 um rod arrays, respectively and the bending of the rods occured due to high aspect ratio in debinding and sintering steps. Also, severe grain growth occurred at rod surface by sintering for 3 hrs at 1300°C and the average size was measured to be about 70 um.

scholarly journals Strength Analysis of Alternative Airframe Layouts of Regional Aircraft on the Basis of Automated Parametrical Models

Aerospace ◽  
2021 ◽  
Vol 8 (3) ◽  
pp. 80
Author(s):  
Dmitry V. Vedernikov ◽  
Alexander N. Shanygin ◽  
Yury S. Mirgorodsky ◽  
Mikhail D. Levchenkov
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
High Performance ◽  
Strength Analysis ◽  
Labor Input ◽  
Aerodynamic Loading ◽  
Aspect Ratios ◽  
Wide Range ◽  
Parametrical Design

This publication presents the results of complex parametrical strength investigations of typical wings for regional aircrafts obtained by means of the new version of the four-level algorithm (FLA) with the modified module responsible for the analysis of aerodynamic loading. This version of FLA, as well as a base one, is focused on significant decreasing time and labor input of a complex strength analysis of airframes by using simultaneously different principles of decomposition. The base version includes four-level decomposition of airframe and decomposition of strength tasks. The new one realizes additional decomposition of alternative variants of load cases during the process of determination of critical load cases. Such an algorithm is very suitable for strength analysis and designing airframes of regional aircrafts having a wide range of aerodynamic concepts. Results of validation of the new version of FLA for a high-aspect-ratio wing obtained in this work confirmed high performance of the algorithm in decreasing time and labor input of strength analysis of airframes at the preliminary stages of designing. During parametrical design investigation, some interesting results for strut-braced wings having high aspect ratios were obtained.

High aspect ratio β-Si 3 N 4 grain growth

2000 ◽  
Vol 20 (6) ◽  
pp. 789-794 ◽  
Author(s):  
D.S. Perera ◽  
D.R.G. Mitchell ◽  
S. Leung
Keyword(s):  
Aspect Ratio ◽  
Grain Growth ◽  
High Aspect Ratio

scholarly journals A novel fabrication technique for high-aspect-ratio nanopillar arrays for SERS application

RSC Advances ◽  
2020 ◽  
Vol 10 (73) ◽  
pp. 45037-45041
Author(s):  
Tianli Duan ◽  
Chenjie Gu ◽  
Diing Shenp Ang ◽  
Kang Xu ◽  
Zhihong Liu
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Fabrication Technique ◽  
Novel Technique ◽  
Aspect Ratios ◽  
Nanopillar Arrays

A novel technique is demonstrated for the fabrication of silicon nanopillar arrays with high aspect ratios.

scholarly journals Saturation Profile Based Conformality Analysis for Atomic Layer Deposition: Aluminum Oxide in Lateral High-Aspect-Ratio Channels

2020 ◽  
Author(s):  
Jihong Yim ◽  
Oili Ylivaara ◽  
Markku Ylilammi ◽  
Virpi Korpelainen ◽  
Eero Haimi ◽  
...  
Keyword(s):  
Aspect Ratio ◽  
Atomic Layer Deposition ◽  
High Aspect Ratio ◽  
Atomic Layer ◽  
Profile Measurement ◽  
Aspect Ratios ◽  
New Information ◽  
Layer Deposition ◽  
Rectangular Channels ◽  
Saturation Profile

<p>ABSTRACT: Atomic layer deposition (ALD) raises global interest through its unparalleled conformality. This work describes new microscopic lateral high-aspect-ratio (LHAR) test structures for conformality analysis of ALD. The LHAR structures are made of silicon and consist of rectangular channels supported by pillars. Extreme aspect ratios even beyond 10 000:1 enable investigations where the adsorption front does not penetrate to the end of the channel, thus exposing the saturation profile for detailed analysis. We use the archetypical trimethylaluminum (TMA)-water ALD process to grow alumina as a test vehicle to demonstrate the applicability, repeatability and reproducibility of the saturation profile measurement and to provide a benchmark for future saturation profile studies. Through varying the TMA reaction and purge times, we obtained new information on the surface chemistry characteristics and the chemisorption kinetics of this widely studied ALD process. We propose new saturation profile related classifications and terminology. </p>

Focused Ion Beam: Advanced Technique for Device Modification

1994 ◽  
Vol 337 ◽  
Author(s):  
Marsha Abramo ◽  
Loren Hahn
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Semiconductor Materials ◽  
Advanced Technique ◽  
Aspect Ratios ◽  
Chip Technology ◽  
Design Changes ◽  
Critical Feedback

ABSTRACTFocused ion beam (FIB) technology is used to modify circuits for early-product design debug; it also has the capability to create probe points to underlying metallurgy, allowing device characterization while maintaining full functionality. These techniques provide critical feedback to designers for rapid verification of proposed design changes.Current FIB technology has its limitations because of redeposition of sputtered material; this phenomena may induce vertical electrical shorts and limit the achievable aspect ratio of a milled via to 6:1. Therefore, innovative enhancements are required to provide modification capability on planar chip technology which may utilize up to five levels of metallurgy. The ability to achieve high-aspect-ratio milling is required to access underlying circuitry. Vias with aspect ratios of 10:1 are necessary in some cases.This paper reviews a gas-assisted etching (GAE) process that enhances FIB milling by volatilizing the sputtered material, examines the results obtained from utilizing the GAE process for high-aspect-ratio milling, and discusses selectivity of semiconductor materials (silicon, aluminum, tungsten and silicon dioxide).

High-Aspect-Ratio Electroplated Structures With 2μm Beamwidth

1999 ◽  
Author(s):  
Xiaobin Li ◽  
Siddharth Kiyawat ◽  
Hector J. De Los Santos ◽  
Chang-Jin “CJ” Kim
Keyword(s):  
Aspect Ratio ◽  
High Aspect Ratio ◽  
Stress Gradient ◽  
Optimization Method ◽  
Nickel Layer ◽  
Driving Voltage ◽  
Aspect Ratios ◽  
Nickel Electroplating ◽  
Electroplating Process ◽  
Micro Structures

Abstract Narrow beamwidth is highly desirable for many micromechanical elements moving parallel to the substrate. A good example is the electrostatically driven flexure structure, whose driving voltage is determined by the width of the beam. This paper presents the process flow and the result of a high-aspect-ratio electroplating process using photoresist (PR) molds. Following a systematic optimization method, PR molds with aspect ratios up to 4.0 were fabricated with a beamwidth of only 2.1μm. Higher aspect ratios, up to 6.8, were achieved using PR double coating technique, with a beamwidth of 2.6μm. Using a Cr/Cu seed layer, nickel electroplating was successfully carried out to translate the PR molds into nickel micro-structures. We observed bend-down of the fully released nickel cantilevers that are over 8μm thick. Further investigation suggested a combined effect of residual stress gradient in the electroplated nickel layer and in-use stiction of the cantilever beams.

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