Structural and Optical Properties of α-Ga2O3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

Ga2O3thin films were grown on sapphire m-cut () and r-cut () orientations substrates at different temperatures by metal-organic chemical vapor deposition. Structural and optical properties of the Ga2O3films were investigated including the influence by annealing for the obtained films. The Ga2O3films on sapphire () and () substrate areα-Ga2O3. The crystallization of the films decreases after annealed at 900 °C. The average transmittance of the samples in the visible wavelength range was over 86% and the optical band gapEgwas about 4.755.15 eV. TheEgof the samples increases after annealing at 900 °C.