Preparation and Characterization of CMC-PVA/PVA-SA-MePc (COOH)8/CS-PVA Bipolar Membrane Using Electrospinning Technique

2013 ◽  
Vol 774-776 ◽  
pp. 795-798
Author(s):  
Ting Jin Zhou ◽  
Min Lu ◽  
Ri Yao Chen
Keyword(s):  
Polyvinyl Alcohol ◽  
Water Splitting ◽  
Current Density ◽  
Voltage Drop ◽  
High Current Density ◽  
High Current ◽  
Bipolar Membrane ◽  
Electrospinning Technique ◽  
Exchange Layer

Carboxymethyl cellulose (CMC)-polyvinyl alcohol (PVA) and chitosan (CS)-polyvinyl alcohol were cross-linked by Fe3+and glutaraldehyde respectively to prepare cation exchange layer and anion exchange layer, and polyvinyl alcohol-sodium alginate (SA)-metal octocarboxyphthalocyanine (MePc (COOH)8, a kind of water splitting catalyst, here, Me stands for Fe3+or Co2+) nanofibers were prepared by electrospinning technique and introduced into the interlayer to obtain the CMC-PVA/PVA-SA-MePc (COOH)8/CS-PVA bipolar membrane (BPM). The experimental results showed that compared with the BPM without the PVA-SA-MePc (COOH)8interlayer, the water splitting efficiency at the interlayer of the CMC-PVA/PVA-SA-MePc (COOH)8/ CS-PVA BPM was obviously increased, and its membrane impedance decreased. When the concentration of FePc (COOH)8in the PVA-SA-FePc (COOH)8nanofibers was 3.0%, the trans-membrane voltage drop (IRdrop) of the CMC-PVA/PVA-SA-FePc (COOH)8/CS-PVA BPM was as low as 0.6V at a high current density of 90 mA/cm2.

Uncovering the role of Ag in layer-alternating Ni3S2/Ag/Ni3S2 as an electrocatalyst with enhanced OER performance

2020 ◽  
Vol 7 (19) ◽  
pp. 3627-3635 ◽  
Author(s):  
Rui Guo ◽  
Yan He ◽  
Renchao Wang ◽  
Junhua You ◽  
Hongji Lin ◽  
...  
Keyword(s):  
Water Splitting ◽  
Current Density ◽  
High Current Density ◽  
High Current

It is increasingly important to develop an efficient OER catalyst that can provide high current density at low overpotentials to improve water splitting efficiency.

scholarly journals Current-voltage curve of a bipolar membrane at high current density

Desalination ◽  
1996 ◽  
Vol 104 (1-2) ◽  
pp. 13-18 ◽  
Author(s):  
T. Aritomi ◽  
Th. van den Boomgaard ◽  
H. Strathmann
Keyword(s):  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Bipolar Membrane ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

Low Temperature Thin-film Silicon Diodes for Consumer Electronics

2005 ◽  
Vol 862 ◽  
Author(s):  
Qi Wang ◽  
Scott Ward ◽  
Anna Duda ◽  
Jian Hua ◽  
Paul Stradins ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Current Density ◽  
Voltage Drop ◽  
High Current Density ◽  
Consumer Electronics ◽  
High Current ◽  
Plastic Substrates ◽  
Forward Current ◽  
Thin Film Silicon

AbstractWe have developed high current density thin-film silicon n-i-p diodes for low cost and low temperature two-dimensional diode-logic memory array applications. The diodes are fabricated at temperatures below 250°C on glass, stainless steel, and plastic substrates using hot-wire chemical vapor deposition (CVD). The 0.01-mm2 standalone diodes have a forward current-density (J) of near 10 kA/cm2 and a rectification ratio over 107 at ±2 V. The 25 μm2 array diodes have J > 104 A/cm2 and rectification of 105 at ±2V. On plastic substrates, we have also used plasma-enhanced CVD to deposit 10-μm diameter diodes with J ˜ 5 x 104 A/cm2. We found that the use of microcrystalline silicon (μc-Si) i- and nlayers results in higher current-density diodes than with amorphous silicon. Reducing the diode area increases the forward current density by lowering the voltage drop across the external series resistances. A prototype diode array memory based on 10-micron devices was successfully demonstrated by monolithically integrating diodes with a-Si:H switching elements. High current density diodes have potential applications in a variety of large area, thin-film electronic devices, in addition to a-Si:H-based memory. This could widen the application of thin-film silicon beyond its present industrial applications in thin-film transistors, solar cells, bolometers and photo-detectors.

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