Influence of Solution Concentration and Annealed Time on P3HT:PCBM Film Device Performance

The J-V curve measurment and AFM technology were applied to study the relationship between P3HT:PCBM heterojunction film solar cell devices photovoltics parameter and blend solution concentration and annealed time of this device. The Voc, Jsc, FF and PCE of device were obtained from the device prepared by three blend solution concentration respectively. Data show that with increasing solution concentration PCE of solar cell device do not always improve and it achieves maximum when concentration is 20 mg/mL. Result indicates that only when solar cell device has active layer with proper thickness its performance will achieve the best effect. Additionally, photovoltaic parameters from four sample prepared by different annealed time were obtained also. Results indicate that the device with proper annealed time of 20 min at 130°C can achieve the best effect.

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Effect of molecular weight on the properties and organic solar cell device performance of a donor–acceptor conjugated polymer

Polymer Chemistry ◽

10.1039/c4py01631a ◽

2015 ◽

Vol 6 (12) ◽

pp. 2312-2318 ◽

Cited By ~ 51

Author(s):

Zeyun Xiao ◽

Kuan Sun ◽

Jegadesan Subbiah ◽

Tianshi Qin ◽

Shirong Lu ◽

...

Keyword(s):

Molecular Weight ◽

Solar Cell ◽

Conjugated Polymer ◽

Organic Solar Cell ◽

Photophysical Properties ◽

Device Performance ◽

Solar Cell Device ◽

Donor Acceptor

The effect of molecular weight of a conjugated polymer on its photophysical properties and solar cell device performance was investigated.

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Regioregularity and solar cell device performance of poly(3-dodecylthienylenevinylene)

Journal of Polymer Science Part B Polymer Physics ◽

10.1002/polb.23078 ◽

2012 ◽

Vol 50 (13) ◽

pp. 917-922 ◽

Cited By ~ 2

Author(s):

Jianyuan Sun ◽

Cheng Zhang ◽

Swaminathan Venkatesan ◽

Rui Li ◽

Sam-Shajing Sun ◽

...

Keyword(s):

Solar Cell ◽

Device Performance ◽

Solar Cell Device

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An inverted ZnO/P3HT:PbS bulk-heterojunction hybrid solar cell with a CdSe quantum dot interface buffer layer

RSC Advances ◽

10.1039/d0ra02740e ◽

2020 ◽

Vol 10 (28) ◽

pp. 16693-16699 ◽

Cited By ~ 2

Author(s):

Ajith Thomas ◽

R. Vinayakan ◽

V. V. Ison

Keyword(s):

Quantum Dots ◽

Solar Cell ◽

Quantum Dot ◽

Buffer Layer ◽

Active Layer ◽

Bulk Heterojunction ◽

Hybrid Solar Cell ◽

Device Performance ◽

Cdse Quantum Dots ◽

Cdse Quantum Dot

An inverted bulk-heterojunction hybrid solar cell with the structure ITO/ZnO/P3HT:PbS/Au was prepared. The device performance was enhanced by inserting an interface buffer layer of CdSe quantum dots between the ZnO and the P3HT:PbS BHJ active layer.

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Control of carrier mobilities for performance enhancement of anthracene-based polymer solar cells

RSC Advances ◽

10.1039/c5ra07792c ◽

2015 ◽

Vol 5 (63) ◽

pp. 50668-50672 ◽

Cited By ~ 2

Author(s):

Özlem Usluer ◽

Sameh Boudiba ◽

Daniel A. M. Egbe ◽

Lionel Hirsch ◽

Mamatimin Abbas

Keyword(s):

Solar Cells ◽

Solar Cell ◽

Charge Carrier ◽

Field Effect ◽

Performance Enhancement ◽

Field Effect Transistors ◽

Polymer Solar Cells ◽

Device Performance ◽

Organic Field Effect Transistors ◽

Solar Cell Device

Charge carrier mobilities in anthracene-based polymer solar cells were controlled using organic field-effect transistors. The best solar cell device performance was achieved using classical PCBM.

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Defects in amorphous silicon carbide and their relation to solar cell device performance

10.1117/12.826451 ◽

2009 ◽

Author(s):

Brian J. Simonds ◽

Feng Zhu ◽

Jian Hu ◽

Arun Madan ◽

P. Craig Taylor

Keyword(s):

Silicon Carbide ◽

Solar Cell ◽

Amorphous Silicon ◽

Device Performance ◽

Solar Cell Device ◽

Amorphous Silicon Carbide

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Novel metallo-dendrimers containing various Ru core ligands and dendritic thiophene arms for photovoltaic applications

Polymer Chemistry ◽

10.1039/c4py00444b ◽

2014 ◽

Vol 5 (18) ◽

pp. 5423-5435 ◽

Cited By ~ 10

Author(s):

Rudrakanta Satapathy ◽

Mohan Ramesh ◽

Harihara Padhy ◽

I.-Hung Chiang ◽

Chih-Wei Chu ◽

...

Keyword(s):

Solar Cell ◽

Active Layer ◽

Polymer Solar Cell ◽

Third Generation ◽

Solar Cell Device ◽

The Third ◽

Photovoltaic Applications

A polymer solar cell device containing an active layer of BTRu2G3 : PC70BM = 1 : 3 (by wt), i.e., the third generation of the bis-Ru-based dendritic complex BTRu2G3 showed the highest PCE value of 0.77%.

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Optimized Growth Conditions for Cu(In, Ga)Se2 Layers Grown by Co-Evaporation at High Deposition Rates

MRS Proceedings ◽

10.1557/proc-763-b8.14 ◽

2003 ◽

Vol 763 ◽

Cited By ~ 1

Author(s):

O. Lundberg ◽

M. Edoff ◽

L. Stolt

Keyword(s):

Solar Cell ◽

Deposition Time ◽

Diffusion Length ◽

Collection Efficiency ◽

Growth Conditions ◽

Device Performance ◽

Solar Cell Device ◽

Deposition Rates ◽

Carrier Collection

AbstractWe have investigated the compositional dependency on solar cell device quality for four different Cu(In, Ga)Se2 (CIGS) processes: Homogeneous and Ga-graded CIGS deposited at 60 min, Homogenous and Ga-graded CIGS deposited at 15 min. The Cu/(In+Ga) ratio was for varied between 0.65 and 1. An improved device performance was observed as the Cu/(In+Ga) ratio was increased from 0.65 up to 0.85 - 0.95 for all the different CIGS processes. This improvement was both due to a more efficient carrier collection at long wavelengths, increasing the Jsc, and an enhanced Voc. We explain theses improvements by an increased diffusion length in the CIGS material. The CIGS layers deposited at 15 min resulted in similar device performance as the CIGS layers deposited at 60 min, at low Cu/(In+Ga) ratios. However, for Cu/(In+Ga) ratios above 0.9 the efficiency difference increased to above 1 % unit, mainly due to a lower collection efficiency, especially at long wavelengths, resulting in a lower Jsc. By introducing a Ga-gradient in the CIGS layer the device performance improved for both deposition times, most clearly for the 15 min deposition time at Cu/(In+Ga) ratios below 0.9. At 15 minutes deposition time the reason for the improvement is a combination of small improvements in FF, Voc and Jsc, reflecting reduced recombination in general. For the single device, deposited at 60 minutes, that showed a significant improvement with Ga-grading, an improved carrier collection at long wavelengths was observed.

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MODULATING CH3NH3PbI3 PEROVSKITE CRYSTALLIZATION BEHAVIOR THROUGH PRECURSOR CONCENTRATION

NANO ◽

10.1142/s1793292014400037 ◽

2014 ◽

Vol 09 (05) ◽

pp. 1440003 ◽

Cited By ~ 6

Author(s):

KUNWU FU ◽

SWEE SIEN LIM ◽

YANAN FANG ◽

PABLO P. BOIX ◽

NRIPAN MATHEWS ◽

...

Keyword(s):

Precursor Solution ◽

Solution Concentration ◽

Crystallographic Analysis ◽

Precursor Concentration ◽

Device Performance ◽

Photovoltaic Devices ◽

Solar Cell Device ◽

Visible Wavelength Range ◽

Precursor Solution Concentration ◽

Perovskite Lattice

Perovskite-based photovoltaic devices have recently achieved impressively high efficiencies beyond 15% and gained great interest. We show here the formation of perovskite cluster overlayer structures which consist of individual perovskite grains on top of mesoporous TiO 2 films, coexisting with the randomly distributed nanocrystals within the films. Perovskite solution concentration was found to play an important role in modulating the perovskite crystallization and cluster overlayer formation process. Absorbance increase in visible wavelength range and shift of photoluminescence (PL) responses of perovskite films due to the effect of precursor concentration change were observed and investigated in detail. The crystallographic analysis of the CH 3 NH 3 PbI 3 films shows a gradual decrease of the perovskite lattice parameters and shrinkage of unit volume as precursor solution concentration increases, which is correlated to the changes of optical properties. Finally, perovskite-based solar cell device performance was enhanced at higher precursor concentration.

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