Fabrication and Plasmas-Relevant Properties of B4C/Cu Coating FGM

in this work, two kinds of boron carbide coating based on copper substrates, which are non-FGM B4C/Cu coating and FGM B4C/Cu coating, have been fabricated successfully. It is found that the chemical sputtering yield of B4C measures by LAS2000 apparatus is much lower than that of SMF800 graphite under the conditions of 3keV, 4.6E 15D+ /s/cm2 irradiation, and that FGM-B4C coating has much better performance than non-FGM-B4C coating in thermal shock tests. Thermal desorption performance and physical sputtering damage after plasma irradiation are also evaluated.

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Influence of high power density plasma irradiation on the boron carbide coating on tungsten

Journal of Physics Conference Series ◽

10.1088/1742-6596/857/1/012003 ◽

2017 ◽

Vol 857 ◽

pp. 012003

Author(s):

L B Begrambekov ◽

A V Grunin ◽

N A Puntakov ◽

Ya A Sadovskiy ◽

N S Utkov

Keyword(s):

Boron Carbide ◽

Power Density ◽

High Power ◽

High Power Density ◽

Carbide Coating ◽

Plasma Irradiation ◽

Density Plasma

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Industrial application of Boron carbide coating technology

Metal Powder Report ◽

10.1016/0026-0657(92)91899-u ◽

1992 ◽

Vol 47 (10) ◽

pp. 50

Author(s):

B. Thomassery ◽

P. Nisio

Keyword(s):

Boron Carbide ◽

Industrial Application ◽

Carbide Coating ◽

Coating Technology

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Renewable boron carbide coating in plasma shots of tokamak Т11-М

Journal of Nuclear Materials ◽

10.1016/j.jnucmat.2009.01.261 ◽

2009 ◽

Vol 390-391 ◽

pp. 996-999 ◽

Cited By ~ 11

Author(s):

O.I. Buzhinskij ◽

V.A. Barsuk ◽

V.G. Otroshchenko

Keyword(s):

Boron Carbide ◽

Carbide Coating

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Physical and Chemical Sputtering at Very Low Ion Energy: the Importance of the Sputtering Threshold

MRS Proceedings ◽

10.1557/proc-129-477 ◽

1988 ◽

Vol 129 ◽

Cited By ~ 4

Author(s):

Christoph Steinbruchel

Keyword(s):

Threshold Energy ◽

Surface Binding ◽

Ion Energy ◽

Chemical Sputtering ◽

Surface Binding Energy ◽

Physical Sputtering ◽

Chemical Etch ◽

Ion Energies ◽

The Difference ◽

Physical And Chemical

ABSTRACTA variety of data for physical etching (i.e. sputtering) and for ion-enhanced chemical etching of Si and SiO2 is analyzed in the very-low-ion-energy regime. Bombardment by inert ions alone, by reactive ions, and by inert ions in the presence of reactiveneutrals is considered. In all cases the etch yield follows a square root dependence on the ion energy all the way down to the threshold energy for etching. At the same time, the threshold energy has a non-negligible effect on the etch yield even at intermediate ion energies. The difference between physical and ion-enhanced chemical etch yields can be accounted for by a reduction in the average surface binding energy of the etch products and a corresponding reduction in the threshold energy for etching. These results suggest that, in general, the selectivity for ion-enhanced etch processes relative to physical sputtering can be increased significantly at low ion energy.

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