Characterization of Amorphous Silicon Thin Films Deposited on Upilex-s Polyimide Substrates for Application in Flexible Solar Cells

2009 ◽  
Vol 87-88 ◽  
pp. 416-421 ◽  
Author(s):  
Ying Ge Li ◽  
Dong Xing Du
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Flexible Electronics ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Conductivity Measurements ◽  
Silicon Thin Films ◽  
Hydrogenated Amorphous

Upilex-s [poly(biphenyl dianhydride-p-phenylene diamine)] polyimide have been widely employed in the area of flexible electronics. For its potential application on fabricating flexible solar cells, the optical properties of Upilex-s are measured in this paper. Intrinsic hydrogenated amorphous silicon layers are then deposited on Upilex-s substrates at temperatures 100°C and 180°C by plasma enhanced chemical vapor deposition (PECVD) system. As an comparison, intrinsic a-Si:H layers are also fabricated on glass substrate of Corning2000. Both layers on flexible and rigid substrates are thoroughly characterized by activation energy and dark conductivity measurements. It can be concluded that the intrinsic layer on Upilex-s has favorable properties and could be a competitive candidate as substrate materials of flexible solar cells.

Effect of Ge Incorporation on Hydrogenated Amorphous Silicon Germanium Thin Films Prepared by Plasma Enhanced Chemical Vapor Deposition

2012 ◽  
Vol 569 ◽  
pp. 27-30
Author(s):  
Bao Jun Yan ◽  
Lei Zhao ◽  
Ben Ding Zhao ◽  
Jing Wei Chen ◽  
Hong Wei Diao ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Silicon Germanium ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Hydrogenated amorphous silicon germanium thin films (a-SiGe:H) were prepared via plasma enhanced chemical vapor deposition (PECVD). By adjusting the flow rate of GeH4, a-SiGe:H thin films with narrow bandgap (Eg) were fabricated with high Ge incorporation. It was found that although narrow Eg was obtained, high Ge incorporation resulted in a great reduction of the thin film photosensitivity. This degradation was attributed to the increase of polysilane-(SiH2)n, which indicated a loose and disordered microstructure, in the films by systematically investigating the optical, optoelectronic and microstructure properties of the prepared a-SiGe:H thin films via transmission, photo/dark conductivity, Raman spectroscopy, and Fourier transform infrared spectroscopy (FTIR) measurements. Such investigation provided a helpful guide for further preparing narrow Eg a-SiGe:H materials with good optoelectronic properties.

Ex situellipsometry characterization of excimer laser annealed amorphous silicon thin films grown by low pressure chemical vapor deposition

1997 ◽  
Vol 71 (3) ◽  
pp. 359-361 ◽  
Author(s):  
Chau-Hong Kuo ◽  
In-Cha Hsieh ◽  
Dieter K. Schroder ◽  
George N. Maracas ◽  
Sheau Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Excimer Laser ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Silicon Thin Films ◽  
Pressure Chemical

Luminescence Quenching in Erbium-Doped Hydrogenated Amorphous Silicon

1996 ◽  
Vol 422 ◽  
Author(s):  
A. Polman ◽  
Jung H. Shin ◽  
R. Serna ◽  
G. N. Van Den Hovenb ◽  
W. G. J. H. M. van Sark ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Amorphous Materials ◽  
Radiative Decay ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Thin Films ◽  
Excitation Model ◽  
Hydrogenated Amorphous

AbstractHydrogenated amorphous silicon thin films, co-doped with oxygen, are made using lowpressure chemical vapor deposition (LPCVD) or plasma-enhanced chemical vapor deposition (PECVD). The films are implanted with Er to a peak concentration of 0.2 at.%. Roomtemperature photoluminescence at 1.54 μm is observed in both amorphous materials, after thermal annealing at 300–400 °C. The PECVD films with low 0 content (0.3, 1.3 at.%) show a luminescence intensity quenching by a factor 7–15 as the temperature is raised from 10 K to room temperature. The quenching is well correlated with a decrease in luminescence lifetime, indicating that non-radiative decay of excited Er3+ is the dominant quenching mechanism as the temperature is increased. In the LPCVD films, with 31 at.% 0, the quenching is only a factor 3, and no lifetime quenching is observed. The results are interpreted in the context of an impurity Auger excitation model, taking into account the fact that oxygen modifies the Si bandgap and the Er-related defect levels in the gap.

scholarly journals High Pressure Chemical Vapor Deposition of Hydrogenated Amorphous Silicon Films and Solar Cells

2016 ◽  
Vol 28 (28) ◽  
pp. 5939-5942 ◽  
Author(s):  
Rongrui He ◽  
Todd D. Day ◽  
Justin R. Sparks ◽  
Nichole F. Sullivan ◽  
John V. Badding
Keyword(s):  
High Pressure ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Hydrogenated Amorphous Silicon ◽  
Chemical Vapor ◽  
Silicon Films ◽  
Pressure Chemical ◽  
Hydrogenated Amorphous

1/f Noise and Thermal Equilibration Effects in Hot Wire Deposited Amorphous Silicon

1996 ◽  
Vol 420 ◽  
Author(s):  
G. M. Khera ◽  
J. Kakalios ◽  
Q. Wang ◽  
E. Iwaniczko
Keyword(s):  
Amorphous Silicon ◽  
Chemical Vapor ◽  
Dark Conductivity ◽  
Hot Wire ◽  
Thermal Equilibration ◽  
Silicon Thin Films ◽  
Conductance Fluctuations ◽  
Non Gaussian ◽  
Noise Statistics ◽  
Hydrogenated Amorphous

AbstractMeasurements of the conductance fluctuations and thermal equilibration of the dark conductivity of a series of undoped hydrogenated amorphous silicon thin films synthesized by Hot-Wire Chemical Vapor Deposition (HWCVD), with hydrogen contents varying from less than one to twelve atomic percent are reported. The spectral density of the conductance fluctuations varies inversely with frequency f and is dependent upon hydrogen concentration; the 1/f noise statistics are non- Gaussian, indicating correlated fluctuators as is observed in PECVD a-Si:H. These results indicate that aspects of electronic transport and defect dynamics in HWCVD films are similar to those in PECVD a-Si:H films.

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