Investigations into the Growth of GaN Nanowires by MOCVD Using Azidotrimethylsilane as Nitrogen Source

2014 ◽  
Vol 875-877 ◽  
pp. 1483-1489
Author(s):  
Miguel Angel Nuñez Velazquez ◽  
Fernando Juárez Lopez
Keyword(s):  
Substrate Surface ◽  
Chemical Vapor ◽  
Melting Process ◽  
Organic Chemical ◽  
Gan Nanowires ◽  
Metal Organic ◽  
Gallium Trichloride ◽  
Precursor Molecules ◽  
Organic Chemical Vapor Deposition ◽  
Nucleation And Growth Mechanism

Gallium trichloride (GaCl3) and azidotrimethylsilane (CH3)3SiN3were employed as alternatives gallium and nitrogen precursors respectively in the growth of GaN nanowires via a metal-organic chemical vapor deposition (MOCVD) system. Au pre-deposition on Si (100) substrate was using as catalysis seed to grown of GaN nanowires. X-Ray, FE-SEM and AFM analyses reveal that nanowires grown at temperature 1050 C present morphology characteristic to model VLS. Scanning electron microscopy reveal a surface morphology made up of wurzite that suggests that wires growth involve a melting process. A nucleation and growth mechanism, involving the congruent melting clusters of precursor molecules on the hot substrate surface, is therefore invoked to explain these observations. We attributed the improved growth behavior to the nearer-to-equilibrium growth and may be close to local thermodynamic equilibrium.

Effect of Incubation Time on Deposition Behavior of Ruthenium Films by MOCVD Using (2,4-Dimethylpentadienyl)(Ethylcyclopentadienyl)Ruthenium

2009 ◽  
Vol 421-422 ◽  
pp. 87-90 ◽  
Author(s):  
Masaki Hirano ◽  
Kazuhisa Kawano ◽  
Hiroshi Funakubo
Keyword(s):  
Incubation Time ◽  
Deposition Temperature ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Native Oxide ◽  
Organic Chemical ◽  
Deposition Mechanism ◽  
Deposition Amount ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

The deposition mechanism of metal-Ru films including incubation time was investigated for Ru films prepared by metal organic chemical vapor deposition from (2,4-Dimethylpentadienyl)(ethylcyclopentadienyl)Ruthenium (DER) - O2 system. Substrates with amorphous top-layer having various Hf/Si ratio, SiO2 (native oxide)/(001)Si (SiO2), HfSiON/SiON/(001)Si (HfSiON) and HfO2/SiON/(001)Si (HfO2), were used as substrates. The deposition temperature dependence of the deposition amount at the fixed deposition time ranging from 210 oC to 300 oC revealed that the deposition amount depended on the deposition temperature below 250 oC, while it was almost constant above this temperature. Incubation time depended on the kinds of substrate at 210 oC and the substrate surface was fully covered in a shorter time with smaller deposition amount for the substrates with shorter incubation time. In addition, the film with shorter incubation time had smaller surface roughness.

Dynamic Film Composition Transition Phenomena in the Copper Oxide Metal Organic Chemical Vapor Deposition (MOCVD) Studied by Scanning Electron Microscopy (Sem)

1992 ◽  
Vol 280 ◽  
Author(s):  
Yu-neng Chang
Keyword(s):  
Vapor Deposition ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Continuous Phase ◽  
Organic Chemical ◽  
Rich Phase ◽  
X Ray ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Temperature Area

ABSTRACTIn this report, the impact of deposition temperature variation on the evolution of film morphology and microstructure was studied. In the copper oxide metal organic chemical vapor deposition (MOCVD) process, a temperature gradient was created on the substrate surface. By using a specific design of the heating susceptor, the local temperature of the leading edge (upstream) on the substrate surface was maintained at 70°C lower than the temperature of the ending (downstream) edge. The evolution of local composition and microstructure in deposited films were analyzed by X-ray diffraction (XRD), transmission Fourier Transform Infrared Spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), and SEM. From XPS and XRD results, Cu2O rich phase was deposited at the low temperature area, while CuO rich phase was deposited at the high temperature area. These two areas were divided by a phase intermixing (transition) zone of 40–100 ums wide. The temperature of this abrupt Cu2O->CuO deposition product transition was determined to be 390°C -400°C. As indicated by SEM results, the low temperature favorite Cu2O continuous phase, collapsed into coarse grains (with the scale of 10 urn) first, then became fine grains among channels of CuO phase, and finally diminished into the high temperature favorite CuO continuous phase. Spatially resolved XPS results also indicated that the film composition changed abruptly through the transition zone. A nucleation-growth competition mechanism, between the Cu2O rich phase and the CuO rich phase, was suggested to occur in this zone. In this model, this dynamic deposition product transition is interpreted by the temperature dependency of nucleation rates for the specific CuO phase or Cu2O phase.

Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission

RSC Advances ◽  
2015 ◽  
Vol 5 (58) ◽  
pp. 47090-47097 ◽  
Author(s):  
Ji-Hyeon Park ◽  
Arjun Mandal ◽  
Dae-Young Um ◽  
San Kang ◽  
Da-som Lee ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Blue Emission ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Capping Layer ◽  
Gan Nanowires ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Merits of InAlGaN capping layer over self-assembled InxGa1−xN/GaN quantum dots coaxially grown on n-GaN nanowires using MOCVD.

scholarly journals Substrate Surface Structure Effects on Microstructure of Epitaxial Films

1992 ◽  
Vol 280 ◽  
Author(s):  
J. Guo ◽  
H.L.M. Chang ◽  
H. Zhang ◽  
D. J. Lam
Keyword(s):  
Surface Structure ◽  
Lattice Constant ◽  
Substrate Surface ◽  
Chemical Vapor ◽  
Epitaxial Films ◽  
Organic Chemical ◽  
Epitaxial Thin Films ◽  
Metal Organic ◽  
Minimum Height ◽  
Organic Chemical Vapor Deposition

ABSTRACTThe microstructure of epitaxial thin films grown on sapphire substrates using the metal organic chemical vapor deposition (MOCVD) technique were found to depend on the substrates surface structure. The epitaxial Ti02 films grown on the sapphire (0001) substrates were highly-oriented poly-crystal and the films on the (1120) substrates were single crystal. First-principles total energy calculations were carried out to gain atomistic understandings of sapphire surface structures and their effects on microstructure of epitaxial films. The surface terminating atom planes were found to be Al atoms for the (0001) surface and O atoms for the (1120). The minimum step heights were found to be one sixth of the lattice constant c for the (0001) and one half of the lattice constant α for the (1120). The steps of the minimum height or its odd multiples on sapphire (0001) surface were shown to double the number of variants in the deposited films. The symmetry and step of the substrate surface and the symmetry of the epitaxial growth plane were found to control the microstructure of the epitaxial films.

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