Thermal Transport in Hotspots Using the Lattice Boltzmann Method with Application to Silicon-on-Insulator Transistors

Silicon-on-insulator (SOI) transistors have been widely used in the micro-electronic devices. The Lattice Boltzmann method (LBM) is employed to simulate the heat conductions of hotspots appeared in a SOI transistor. The results show that a thermal wave effect is appeared in micro-region, and it can not be found in Fourier prediction. Comparing the results obtained by the Fourier law and LBM, we find that the LBM solution shows approximately 22% higher energy density than the Fourier prediction. When two thermal waves form different hotspots meet together, a significant energy enhancement will be appeared.

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Transient conduction simulation of a nano-scale hotspot using finite volume lattice Boltzmann method

International Journal of Modern Physics C ◽

10.1142/s0129183113501039 ◽

2014 ◽

Vol 25 (04) ◽

pp. 1350103 ◽

Cited By ~ 11

Author(s):

R. S. Samian ◽

A. Abbassi ◽

J. Ghazanfarian

Keyword(s):

Lattice Boltzmann Method ◽

Finite Volume ◽

Knudsen Number ◽

Lattice Boltzmann ◽

Solid Material ◽

Transient Heat Conduction ◽

Test Case ◽

Fourier Law ◽

Diffusive Regime ◽

Boltzmann Method

This paper uses the finite volume lattice Boltzmann method (FVLBM) to simulate the transient heat conduction from macro- to nano-scales corresponding to Kn = 0.01–10. This model is used for two dimensional (2D) transient hotspot modeling. The results of the diffusive regime are compared with those of the Fourier law as a model of continuum mechanics and an excellent agreement is found in this regime. After the validation of model for the case of Kn = 0.01, it has been used for high-Knudsen number simulations and a test case with Kn = 10 is studied. By increasing the Knudsen number from 0.01 up to 10, the transition from totally diffusive to totally ballistic behavior has been discussed and the wave-feature of heat transport through the solid material has been investigated.

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Using the Lattice Boltzmann Method to Simulate the Heat Conduction in a Thin Film Induced by Ultra-Fast Laser

Applied Mechanics and Materials ◽

10.4028/www.scientific.net/amm.723.896 ◽

2015 ◽

Vol 723 ◽

pp. 896-900

Author(s):

Yu Dong Mao ◽

Ming Tian Xu

Keyword(s):

Thin Film ◽

Lattice Boltzmann Method ◽

Lattice Boltzmann ◽

Laser Heating ◽

Silicon Film ◽

Fourier Law ◽

Higher Temperature ◽

Boltzmann Method ◽

Heating Technology ◽

Thin Silicon Film

Ultra-fast laser heating technology has been widely used in the micro-/nanodevices. The Lattice Boltzmann method (LBM) is employed to simulate the heat conductions of laser heating appeared in a thin film. The results obtained by the LBM show that a wavelike behavior is appeared, but it can not be found in Fourier prediction. Comparing the results obtained by the Fourier law and LBM, we find that the LBM solution shows higher temperature than the Fourier prediction. Moreover, simultaneously heating both surfaces of a thin silicon film by ultra-fast lasers can induce two thermal waves traveling in the opposite directions, and when they meet together, the energy will enhance significantly.

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An immersed boundary-thermal lattice Boltzmann method using an equilibrium internal energy density approach for the simulation of flows with heat transfer

Journal of Computational Physics ◽

10.1016/j.jcp.2009.12.002 ◽

2010 ◽

Vol 229 (7) ◽

pp. 2526-2543 ◽

Cited By ~ 45

Author(s):

H.K. Jeong ◽

H.S. Yoon ◽

M.Y. Ha ◽

M. Tsutahara

Keyword(s):

Heat Transfer ◽

Energy Density ◽

Lattice Boltzmann Method ◽

Internal Energy ◽

Lattice Boltzmann ◽

Immersed Boundary ◽

Boltzmann Method ◽

Thermal Lattice Boltzmann

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Numerical Simulation of Thermomagnetic Convection in an Enclosure Using the Lattice Boltzmann Method

ASME 2010 3rd Joint US-European Fluids Engineering Summer Meeting: Volume 1, Symposia – Parts A, B, and C ◽

10.1115/fedsm-icnmm2010-30872 ◽

2010 ◽

Author(s):

Mahshid Hadavand ◽

Aydin Nabovati ◽

Antonio C. M. Sousa

Keyword(s):

Natural Convection ◽

Lattice Boltzmann Method ◽

Lattice Boltzmann ◽

Magnetic Force ◽

Electronic Devices ◽

Electrical Current ◽

Thermomagnetic Convection ◽

Third Dimension ◽

Boltzmann Method ◽

The Magnetic Field

The application of the single relaxation time lattice Boltzmann method (LBM) is extended to the study of thermomagnetic convection in a differentially heated square cavity with an infinitely long third dimension. The magnetic field is created and controlled by placing a dipole at the bottom of the enclosure. The magnitude of the magnetic force acting on the ferrofluid is controlled by changing the electrical current through the dipole. In this study, the effects of combined natural convection and magnetic convection, which is commonly known as “thermomagnetic convection”, are analysed in what concerns the flow modes and heat transfer characteristics of a magnetic fluid (ferrofluid). This is a situation of considerable interest for cooling micro-electronic devices, when natural convection does not meet the cooling requirements, and forced convection is not viable due to the difficulties associated with pumping a ferrofluid.

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Sub-Continuum Heat Conduction in Electronics Using the Lattice Boltzmann Method

2003 International Electronic Packaging Technical Conference and Exhibition, Volume 2 ◽

10.1115/ipack2003-35258 ◽

2003 ◽

Cited By ~ 8

Author(s):

Sartaj S. Ghai ◽

Rodrigo A. Escobar ◽

Myung S. Jhon ◽

Cristina H. Amon

Keyword(s):

Heat Conduction ◽

Lattice Boltzmann Method ◽

Lattice Boltzmann ◽

Internal Heat ◽

Numerical Data ◽

Computational Effort ◽

Silicon On Insulator ◽

Boltzmann Transport ◽

Boltzmann Method

The lattice Boltzmann method (LBM) is used to examine multi-length scale, confined heat conduction problems in one dimension for which sub-continuum effects are important. This paper describes the implementation of the method and its application to electronic devices. A silicon-on-insulator device with internal heat generation is used as a case study to illustrate the advantages of the LBM. We compare our results with various hierarchical equations of heat transfer such as Fourier, Cattaneo, and Boltzmann transport equations, as well as with experimental and numerical data from the literature. Our results provide excellent agreement with other methodologies, at a far less computational effort.

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Time-Dependent Simulations of Sub-Continuum Heat Generation Effects in Electronic Devices Using the Lattice Boltzmann Method

Microelectromechanical Systems ◽

10.1115/imece2003-41522 ◽

2003 ◽

Cited By ~ 7

Author(s):

Rodrigo A. Escobar ◽

Sartaj S. Ghai ◽

Cristina H. Amon ◽

Myung S. Jhon

Keyword(s):

Lattice Boltzmann Method ◽

Heat Generation ◽

Lattice Boltzmann ◽

Phonon Scattering ◽

Constant Heat Flux ◽

Silicon On Insulator ◽

Wave Nature ◽

Temperature Levels ◽

Boltzmann Method ◽

Fourier Equation

The lattice Boltzmann method (LBM), which accounts for electron-phonon scattering, is used to investigate heat generation effects on silicon-on-insulator (SOI) transistors. The wave nature of the LBM is shown and its influence on subcontinuum dynamics is discussed. The implementation of boundary conditions for constant temperature and constant heat flux is described. SOI devices are modeled as thin films in one dimension. The LBM simulation results for diffusive, transitional, and ballistic regimes are compared with Fourier equation solutions and literature results. For transitional and ballistic regimes, Fourier equation results underpredict the temperature levels obtained by the LBM, which is consistent with the findings previously reported by different authors.

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