The Investigation of Microstructures Fabrication on Quartz Substrate Employing Electron Beam Lithography (EBL) and ICP-RIE Process

2014 ◽  
Vol 980 ◽  
pp. 69-73 ◽  
Author(s):  
Liyana Shamsuddin ◽  
Khairudin Mohamed ◽  
Alsadat Rad Maryam
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Inductively Coupled Plasma ◽  
Quartz Substrate ◽  
Spot Size ◽  
Beam Current ◽  
Step Size ◽  
Nano Structures ◽  
Wide Range ◽  
Working Distance

The fabrication of micro or nano-structures on quartz substrate has attracted researchers' attention and interests in recent years due to a wide range of potential applications such as NEMS/MEMS, sensors and biomedical engineering. Various types of next generation lithographic methods have been explored since optical lithography physical limitations has hindered the fabrication of high aspects ratio (HAR) structure on quartz substrates. In this research, the top-down fabrication approach was employed to fabricate microstructures on quartz substrate using Electron Beam Lithography (EBL) system, followed by the pattern transfer process using Inductively Coupled Plasma-Reactive Ion Etching (ICP-RIE) technique. The factors that influenced pattern definition include the type of electron beam (e-beam) photoresist, e-beam exposure parameter such as spot size, working distance, write field, step size, e-beam current, dosage as well as the type of developer and its developing time. The optimum conditions were investigated in achieving micro or nano-structures. Field emission scanning electron microscopy (FESEM) with energy-dispersive X-ray (EDX) and atomic force microscope (AFM) were utilized to characterize the structures profiles.

Nanohole and dot patterning processes on quartz substrate byR–θ electron beam lithography and nanoimprinting

2016 ◽  
Vol 55 (6S1) ◽  
pp. 06GM03 ◽  
Author(s):  
Tsuyoshi Watanabe ◽  
Kazutake Taniguchi ◽  
Kouta Suzuki ◽  
Hiromasa Iyama ◽  
Shuji Kishimoto ◽  
...  
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Quartz Substrate

Plasmonic and Diffractive Coupling in 2D Arrays of Nanoparticles produced by Electron Beam Lithography

2006 ◽  
Vol 951 ◽  
Author(s):  
Erin McLellan ◽  
Linda Gunnarsson ◽  
Tomas Rindzevicius ◽  
Mikael Kall ◽  
Shengli Zou ◽  
...  
Keyword(s):  
Electron Beam ◽  
Plasmon Resonance ◽  
Electron Beam Lithography ◽  
Driving Forces ◽  
Dark Field ◽  
Interparticle Spacing ◽  
Circular Cylinders ◽  
Two Dimensional ◽  
Precise Control ◽  
Wide Range

ABSTRACTNanofabrication is one of the driving forces leading to developments in a variety of fields including microelectronics, medicine, and sensors. Precise control over nanoscale architecture is an essential aspect in relating new size-dependent material properties. Both direct write methods and natural lithography's offer a unique opportunity to fabricate “user-defined” writing of nanostructures in a wide range of materials. Electron Beam Lithography (EBL) and Nanosphere Lithography (NSL) provide the opportunity to fabricate precise nanostructures on a wide variety of substrates with a large range of materials. Using electrodynamics calculations, Schatz and coworkers have discovered one and two dimensional array structures that produce remarkably narrow plasmon resonance spectra upon irradiation with light that is polarized perpendicularly to the array axis. In order to investigate these interactions, precise control of nanoparticle orientation, size, shape and spacing is necessary. If the overall structures have excessive defects then the effect may not be seen. For the two dimensional arrays, to have the best control over array fabrication and to look at these interactions experimentally, EBL was used to construct both hexagonal arrays of circular cylinders and the Kagome lattice. The interparticle spacing in each of these structures was varied systematically. Dark field microscopy was used to look at overall sample homogeneity and collect the single particle plasmon resonance spectrum. Additionally, both dark-field and extinction spectroscopies were used to look at the bulk spectral properties of each array type and each spacing. In investigating of the two dimensional arrays, the Kagome structure was also compared to samples produced by traditional NSL to study the optical interaction of defects, domains, and overall sample uniformity on the shape and location of the plasmon resonance. This work illustrates a deeper understanding in the nature of the optical coupling in nanostructures and this knowledge can be utilized in the future to fabricate designer (tailor made) substrates for plasmonic and surface-enhanced raman applications.

Studies of CoSi2 nano-structures produced by high-dose ion implantation in Si

1989 ◽  
Vol 47 ◽  
pp. 454-455
Author(s):  
S.D. Berger ◽  
D. Loretto ◽  
H.A. Huggins ◽  
Alice E. White ◽  
K.T. Short ◽  
...  
Keyword(s):  
Electron Beam ◽  
High Temperature ◽  
Electron Beam Lithography ◽  
Growth Process ◽  
High Dose ◽  
Nano Structures ◽  
High Temperature Anneal ◽  
Discrete Structures ◽  
Buried Layers ◽  
High Doses

Recently it has been shown that buried layers of single crystal, orientated CoSi2 Can be produced in silicon by implanting high doses of Co followed by a high temperature anneal. This process is known as mesotaxy. The original implant produces a skewed Gaussian distribution of ions. However, on annealing it is found that the distribution sharpens dramatically to give layers which nave flat and abrupt interfaces and are of very good structural and electrical quality.Using a combination of electron beam lithography and reactive ion etching we have fabricated masks which confine the implant dose laterally. In this way we are able to produce discrete structures of CoSi2 with nanometer dimensions. Furthermore, we can now investigate the epitaxial growth process which occurs during the anneal by varying the structure's dimensions, shape and crystallographic orientation with respect to the substrate.

Magnesium Diboride Superconducting Films Synthesized by Different Electron-Beam Annealing Currents

2014 ◽  
Vol 887-888 ◽  
pp. 737-742
Author(s):  
Zhuang Xu ◽  
Xiang Dong Kong ◽  
Jun Wang ◽  
Han Li ◽  
Qian Dai ◽  
...  
Keyword(s):  
Electron Beam ◽  
Magnesium Diboride ◽  
Influence Factors ◽  
Spot Size ◽  
Beam Current ◽  
Annealing Duration ◽  
Zero Field ◽  
Beam Spot ◽  
Beam Spot Size ◽  
Beam Currents

Considerable progress to synthesize magnesium diboride (MgB2) films by electron-beam annealing has been made. A series of MgB2 films with a Tc higher than 35 K had been fabricated. MgB2 film superconductivity is affected by electron-beam accelerating voltage, beam current, annealing duration, beam spot size and Mg/B ratio. In order to fabricate better MgB2 films, these influence factors must be intensively studied. In this paper, the influence of e-beam current on superconductivity was investigated with an accelerating voltage of 32 kV, an annealing time of 0.26 s and different annealing beam currents of 9.9 mA, 10.7 mA, 12.8 mA, 13.3 mA and 14.0 mA. The results show the MgB2 film with 12.8 mA has the highest Tc and the densest structure. Its zero-field Jc at 15K has reached 3.2×106 A/cm2. The variation of the film superconducting properties with the beam currents was grasped, which will lay the foundation for the fabrication of high quality MgB2 thin films

Annular Focused Electron/Ion Beams for Combining High Spatial Resolution with High Probe Current

2016 ◽  
Vol 22 (5) ◽  
pp. 948-954 ◽  
Author(s):  
Anjam Khursheed ◽  
Wei Kean Ang
Keyword(s):  
Electron Beam ◽  
Ion Beam ◽  
Current Mode ◽  
Spot Size ◽  
Beam Current ◽  
Ion Beams ◽  
Second Order ◽  
Primary Beam ◽  
Objective Lens ◽  
Probe Current

AbstractThis paper presents a proposal for reducing the final probe size of focused electron/ion beam columns that are operated in a high primary beam current mode where relatively large final apertures are used, typically required in applications such as electron beam lithography, focused ion beams, and electron beam spectroscopy. An annular aperture together with a lens corrector unit is used to replace the conventional final hole-aperture, creating an annular ring-shaped primary beam. The corrector unit is designed to eliminate the first- and second-order geometric aberrations of the objective lens, and for the same probe current, the final geometric aberration limited spot size is predicted to be around a factor of 50 times smaller than that of the corresponding conventional hole-aperture beam. Direct ray tracing simulation is used to illustrate how a three-stage core lens corrector can be used to eliminate the first- and second-order geometric aberrations of an electric Einzel objective lens.

An electron beam lithography tool with a Schottky emitter for wide range applications

1994 ◽  
Vol 23 (1-4) ◽  
pp. 81-84 ◽  
Author(s):  
B.H. Koek ◽  
T. Chisholm ◽  
A.J. v. Run ◽  
J. Romijn ◽  
J.P. Davey
Keyword(s):  
Electron Beam ◽  
Electron Beam Lithography ◽  
Wide Range

A high current focused electron ring-beam column design

2019 ◽  
Vol 34 (36) ◽  
pp. 1942002
Author(s):  
Pranesh Balamuniappan ◽  
Wei Kean Ang ◽  
Anjam Khursheed
Keyword(s):  
Electron Beam ◽  
Beam Current ◽  
Accelerator Physics ◽  
Beam Angle ◽  
Third Order ◽  
Beam Columns ◽  
Probe Size ◽  
Spot Radius ◽  
Column Design ◽  
Working Distance

There are many applications in electron microscopy, electron spectroscopy, as well as accelerator physics that require the combination of minimizing a focused electron beam’s probe size while maximizing its beam current. This paper describes how this can be done through the use of annular focused electron beam column designs, where an electron beam is propagated and focused in the form of a ring beam. For probe semi-angles of [Formula: see text] radians, a column consisting of two identical electric sectors and two identical focusing lenses functioning with odd symmetry will be presented, together with a wide-angle cold field emission gun design. The column is designed to cancel energy dispersion while limiting geometric aberrations to the third order at the point of final focus. This design is predicted to have over two orders of magnitude higher beam current than the corresponding conventional on-axis focused electron beam columns for the same final probe size. For a 1.2 keV annular electron beam, simulation results predict a spot radius of 4.8 nm at a working distance of 3.4 mm, final beam angle of [Formula: see text] mrad, and energy spread of [Formula: see text] eV.

PERFORMANCE OF PMMA FOR NANODOT PATTERNING USING ELECTRON BEAM LITHOGRAPHY

2005 ◽  
Vol 04 (04) ◽  
pp. 587-589
Author(s):  
T. V. NARAYANAN ◽  
SOHAN SINGH ◽  
HENDRIX TANOTO ◽  
MY THE ◽  
SOON FATT YOON
Keyword(s):  
Electron Beam ◽  
Quantum Dot ◽  
Electron Beam Lithography ◽  
Beam Current ◽  
Scattering Effects ◽  
Beam Parameters

The performance of a positive tone resist, PMMA, for sub 100 nm patterning of nano-dots using electron beam lithography is to be studied. This optimization is done on a JEOL JBX-6000 FS System. The various parameters such as beam current, resist thickness, dose and electron energies are optimized. This patterning involves greater control over beam parameters so as to reduce aberrations that might arise due to astigmatism. In this respect, the optimization of the beam current parameters is very important, as a narrower beam will minimize scattering effects. These structures will be particularly significant for the fabrication of quantum dot based devices. Nano-dot arrays of dimensions 70 nm with equal spacings of 70 nm were obtained at 100 pA beam current at 50 KeV for a dose of 170 μC/cm2.

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