Influence of the Annealing on the Thermal Stability of Ge-Sb-Te Materials for Recording Devices

2010 ◽  
Vol 67 ◽  
pp. 22-27 ◽  
Author(s):  
Sergey Kozyukhin ◽  
Alexey A. Sherchenkov
Keyword(s):  
Thermal Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Endothermic Peak ◽  
Scanning Calorimetry ◽  
Reading Processes ◽  
Stability Of Structure ◽  
Data Reading ◽  
Thermal Stability Of ◽  
Change Memory

Phase change memory materials of Ge-Sb-Te system [(GeTe)m(Sb2Te3)n (m : n = 1:1; 1:2; 2:1)] were studied during thermal cycling by differential scanning calorimetry, and thermal properties were determined. Reproducible endothermic peak in the range of 390-415°C was revealed in Ge2Sb2Te5, GeSb2Te4, GeSb4Te7, which may possibly influence on the kinetics and endurance of data reading processes in phase-change memory devices. The nature of this endothermic peak is discussed. It was shown that additional annealing of synthesized Ge2Sb2Te5 increase stability of structure and thermal properties of the material.

Improved thermal stability of N-doped Sb materials for high-speed phase change memory application

2016 ◽  
Vol 108 (22) ◽  
pp. 223103 ◽  
Author(s):  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Hua Zou ◽  
Jianhao Zhang ◽  
Li Yuan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Memory ◽  
Thermal Stability Of ◽  
Change Memory

Eutectic Sb7.4Te92.6 thin film for non-volatile phase-change memories

2019 ◽  
Vol 36 (4) ◽  
pp. 171-175
Author(s):  
Claudio Barbon ◽  
Vitaliy Bilovol ◽  
Emiliano Javier Di Liscia ◽  
Bibiana Arcondo
Keyword(s):  
Phase Change ◽  
Phase Change Memory ◽  
X Ray Diffraction ◽  
Scanning Calorimetry ◽  
Content Type ◽  
Current Voltage ◽  
Volatile Phase ◽  
Characteristic Values ◽  
Practical Implications ◽  
Change Memory

Purpose The purpose of this paper is to investigate the structure and electrical properties of eutectic Sb7.4Te92.6 as made thin films to evaluate their potentiality for application to non-volatile phase-change memories. Design/methodology/approach The films were prepared by the pulsed laser deposition technique. The films were characterized by using X-ray diffraction in grazing-incident geometry, differential scanning calorimetry, Raman spectroscopy and transversal current–voltage curves. Findings The memory effect state, characteristic of a typical phase-change memory material, was observed. The temperature of crystallization was about 100ºC. Research limitations/implications Further studies on endurance, scaling and SET/RESET operations are needed. Practical implications One of the main characteristic values, the hold voltage and the threshold voltage values, were about 0.85 and 1.2 V, respectively, in a line with those of Ge2Sb2Te5, GeTe and Sb2Te being considered to date as the main compounds for phase-change memory devices. Originality/value The conduction mechanism in the amorphous regime is highly agreed with the Poole–Frenkel effect in deep traps.

scholarly journals Thermal properties of flax fiber scoured by different methods

2015 ◽  
Vol 19 (3) ◽  
pp. 939-945 ◽  
Author(s):  
Dong Zheng ◽  
Ruo-Yao Ding ◽  
Zheng Lei ◽  
Zhang Xingqun ◽  
Yu Chong-Wen
Keyword(s):  
Thermal Properties ◽  
Thermal Behavior ◽  
Value Added ◽  
Exothermic Peak ◽  
Endothermic Peak ◽  
Scanning Calorimetry ◽  
Volatile Products ◽  
Third Stage ◽  
Thermal Stability Of ◽  
Thermal Gravity Analyzer

Thermal properties of flax roves untreated and treated were characterized by differential scanning calorimetry (DSC) and thermal gravity analyzer (TGA) in order to understand their thermal behavior in more detail and to evaluate the effect of scouring processing on the thermal behavior. Flax roves were treated with six kinds of methods including biological scouring, one bath, two bath, bleaching, alkali scouring and industry chemical scouring as standards. Results showed that all treatments improved thermal stability of flax roves. The results indicated that glass transition temperature (Tg) decreased after scouring besides the sample by directly bleaching. It is more difficult to determine the endothermic peak of flax treated by chemical scouring in industry because it takes a very flat course. A distinct endothermic peak was observed for the untreated flax rove, while a distinct exothermic peak in different temperature interval was revealed for other four treated flax rove samples. For TGA analysis, thermal degradation of flax roves studied consists of three regions of the initial, main, and char decomposition, and the third stage consists of secondary weight loss and carbonization for flax roves with biological scouring, one-bath and two-bath. Besides, different residue left indicates that the bio-scoured flax roves are lost with volatile products and does not contribute to char formation. These results provide valuable preferences for mechanism and top value added application of bio-scouring in flax roves.

Temperature dependence of thermal properties of Ag8In14Sb55Te23 phase-change memory materials

2008 ◽  
Vol 94 (3) ◽  
pp. 627-631 ◽  
Author(s):  
Xinbing Jiao ◽  
Jingsong Wei ◽  
Fuxi Gan ◽  
Mufei Xiao
Keyword(s):  
Thermal Properties ◽  
Phase Change ◽  
Temperature Dependence ◽  
Phase Change Memory ◽  
Change Memory

Thermal properties of In–Sb–Te films and interfaces for phase change memory devices

2014 ◽  
Vol 120 ◽  
pp. 3-8 ◽  
Author(s):  
Roberto Fallica ◽  
Claudia Wiemer ◽  
Toni Stoycheva ◽  
Elena Cianci ◽  
Massimo Longo ◽  
...  
Keyword(s):  
Thermal Properties ◽  
Phase Change ◽  
Phase Change Memory ◽  
Memory Devices ◽  
Change Memory

Improvement of thermal stability of antimony film by cerium addition for phase change memory application

2018 ◽  
Vol 29 (19) ◽  
pp. 17003-17007
Author(s):  
Jianhao Zhang ◽  
Hua Zou ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Yuemei Sun ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Antimony Film ◽  
Thermal Stability Of ◽  
Change Memory

scholarly journals Samarium doped Sn15Sb85: a promising material for phase change memory applications

RSC Advances ◽  
2017 ◽  
Vol 7 (88) ◽  
pp. 56000-56005 ◽  
Author(s):  
Hua Zou ◽  
Liangjun Zhai ◽  
Yifeng Hu ◽  
Xiaoqin Zhu ◽  
Haipeng You ◽  
...  
Keyword(s):  
Thin Films ◽  
Thermal Stability ◽  
Magnetron Sputtering ◽  
Phase Change ◽  
Phase Change Memory ◽  
Promising Material ◽  
Memory Applications ◽  
Thermal Stability Of ◽  
Change Memory

Thermal stability of phase change films is key for phase change memory applications. Sm doped Sn15Sb85 thin films were prepared by magnetron sputtering. Compared with none doped films, the thermal stability of the film was significantly improved.

The Effect of Ti-Rich TiN Film on Thermal Stability of Ge2Sb2Te5for Phase Change Memory

2016 ◽  
Vol 5 (5) ◽  
pp. P245-P249 ◽  
Author(s):  
Dan Gao ◽  
Bo Liu ◽  
Zhen Xu ◽  
Zhichao Li ◽  
Yangyang Xia ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Tin Film ◽  
Thermal Stability Of ◽  
Change Memory

Amorphous thermal stability of Al-doped Sb2Te3 films for phase-change memory application

2013 ◽  
Vol 103 (18) ◽  
pp. 181908 ◽  
Author(s):  
Fenfen Wei ◽  
Long Wang ◽  
Tao Kong ◽  
Lin Shi ◽  
Rong Huang ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Phase Change ◽  
Phase Change Memory ◽  
Thermal Stability Of ◽  
Change Memory

scholarly journals Exploring ultrafast threshold switching in In3SbTe2 phase change memory devices

2019 ◽  
Vol 9 (1) ◽  
Author(s):  
Nishant Saxena ◽  
Christoph Persch ◽  
Matthias Wuttig ◽  
Anbarasu Manivannan
Keyword(s):  
Thermal Stability ◽  
Electric Field ◽  
Phase Change ◽  
High Speed ◽  
Phase Change Materials ◽  
Phase Change Memory ◽  
Threshold Switching ◽  
Experimental Findings ◽  
Thermal Stability Of ◽  
Change Memory

AbstractPhase change memory (PCM) offers remarkable features such as high-speed and non-volatility for universal memory. Yet, simultaneously achieving better thermal stability and fast switching remains a key challenge. Thus, exploring novel materials with improved characteristics is of utmost importance. We report here, a unique property-portfolio of high thermal stability and picosecond threshold switching characteristics in In3SbTe2 (IST) PCM devices. Our experimental findings reveal an improved thermal stability of amorphous IST compared to most other phase change materials. Furthermore, voltage dependent threshold switching and current-voltage characteristics corroborate an extremely fast, yet low electric field threshold switching operation within an exceptionally small delay time of less than 50 picoseconds. The combination of low electric field and high speed switching with improved thermal stability of IST makes the material attractive for next-generation high-speed, non-volatile memory applications.

Sign in / Sign up

Export Citation Format

Share Document