Teh Effect of Boron Concentration upon Defect Formation after Laser Thermal Processing using Molecular Dynamics

2002 ◽  
Vol 210-212 ◽  
pp. 71-80 ◽  
Author(s):  
L. Wang ◽  
C.S. Murthy ◽  
P. Clancy
2002 ◽  
Vol 717 ◽  
Author(s):  
Erik Kuryliw ◽  
Kevin S. Jones ◽  
David Sing ◽  
Michael J. Rendon ◽  
Somit Talwar

AbstractLaser Thermal Processing (LTP) involves laser melting of an implantation induced preamorphized layer to form highly doped ultra shallow junctions in silicon. In theory, a large number of interstitials remain in the end of range (EOR) just below the laser-formed junction. There is also the possibility of quenching in point defects during the liquid phase epitaxial regrowth of the melt region. Since post processing anneals are inevitable, it is necessary to understand both the behavior of these interstitials and the nature of point defects in the recrystallized-melt region since they can directly affect deactivation and enhanced diffusion. In this study, an amorphizing 15 keV 1 x 1015/cm2 Si+ implant was done followed by a 1 keV 1 x 1014/cm2 B+ implant. The surface was then laser melted at energy densities between 0.74 and 0.9 J/cm2 using a 308 nm excimer-laser. It was found that laser energy densities above 0.81 J/cm2 melted past the amorphous-crystalline interface. Post-LTP furnace anneals were performed at 750°C for 2 and 4 hours. Transmission electron microscopy was used to analyze the defect formation after LTP and following furnace anneals. Secondary ion mass spectrometry measured the initial and final boron profiles. It was observed that increasing the laser energy density led to increased dislocation loop formation and increased diffusion after the furnace anneal. A maximum loop density and diffusion was observed at the end of the process window, suggesting a correlation between the crystallization defects and the interstitial evolution.


2001 ◽  
Vol 200-202 ◽  
pp. 145-152
Author(s):  
H.B. Banisaukas ◽  
Kevin S. Jones ◽  
S. Talwar ◽  
D.C. Jacobson

1998 ◽  
Author(s):  
Somit Talwar ◽  
Gaurav Verma ◽  
Kurt H. Weiner ◽  
Carol Gelatos

2008 ◽  
Vol 92 (8) ◽  
pp. 082109 ◽  
Author(s):  
J. A. Sharp ◽  
A. J. Smith ◽  
R. P. Webb ◽  
K. J. Kirkby ◽  
N. E. B. Cowern ◽  
...  

2004 ◽  
Vol 95 (11) ◽  
pp. 6048-6053 ◽  
Author(s):  
Y. F. Chong ◽  
H.-J. L. Gossmann ◽  
M. O. Thompson ◽  
S. Yang ◽  
K. L. Pey ◽  
...  

2006 ◽  
Author(s):  
Vikas Tomar ◽  
Min Zhou

The objective of this research is to analyze uniaxial tensile and compressive mechanical deformations of α-Fe2O3 + fcc Al nanoceramic-metal composites using classical molecular dynamics (MD). Specifically, variations in the nucleation and the propagation of defects (such as dislocations and stacking faults etc.) with variation in the nanocomposite phase morphology and their effect on observed tensile and compressive strengths of the nanocomposites are analyzed. For this purpose, a classical molecular dynamics (MD) potential that includes an embedded atom method (EAM) cluster functional, a Morse type pair function, and a second order electrostatic interaction function is developed, see Tomar and Zhou (2004) and Tomar and Zhou (2006b). The nanocrystalline structures (nanocrystalline Al, nanocrystalline Fe2O3 and the nanocomposites with 40% and 60% Al by volume) with average grain sizes of 3.9 nm, 4.7 nm, and 7.2 nm are generated using a combination of the well established Voronoi tessellation method with the Inverse Monte-Carlo method to conform to prescribed log-normal grain size distributions. For comparison purposes, nanocrystalline structures with a specific average grain size have the same grain morphologies and the same grain orientation distribution. MD simulations are performed at the room temperature (300 K). Calculations show that the deformation mechanism is affected by a combination of factors including the fraction of grain boundary (GB) atoms and the electrostatic forces between atoms. The significance of each factor is dependent on the volume fractions of the Al and Fe2O3 phases. Depending on the relative orientations of the two phases at an interface, the contribution of the interface to the defect formation varies. The interfaces have stronger effect in structures with smaller average grain sizes than in structures with larger average grain sizes.


2002 ◽  
Vol 717 ◽  
Author(s):  
K. A. Gable ◽  
K. S. Jones ◽  
M. E. Law ◽  
L. S. Robertson ◽  
S. Talwar

AbstractOne alternative to conventional rapid thermal annealing (RTA) of implants for ultra-shallow junction formation is that of laser annealing. Laser thermal processing (LTP) incorporates an excimer pulsed laser capable of melting the near surface region of the silicon (Si) substrate. The melt depth is dependent upon the energy density supplied by the irradiation source and the melting temperature of the substrate surface. A process window associated with this technique is able to produce similar junction depths over a range of energy densities due to the melting temperature depression established with pre-amorphization of the substrate surface prior to dopant incorporation. The process window of germanium (Ge) preamorphized, boron (B) doped Si was investigated. 200 mm (100) n-type Si wafers were preamorphized via 18 keV Ge+ implantation to 1x1015/cm2 and subsequently implanted with 1 keV B+ to doses of 1x1015/cm2, 3x1015/cm2, 6x1015/cm2, and 9x1015/cm2. The wafers were laser annealed from 0.50 J/cm2 to 0.88 J/cm2 using a 308 nm XeCl excimer irradiation source. Transmission electron microscopy (TEM) was used to determine the process window for each implant condition, and correlations between process window translation and impurity concentration were made. Four-point probe quantified dopant activation and subsequent deactivation upon post-LTP furnace annealing.


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