The Lateral Photovoltaic Effect in the Fe/SiO2/ Si Structure with Different Silicon Conductivity Type

2018 ◽  
Vol 386 ◽  
pp. 137-142
Author(s):  
Tatiana A. Pisarenko ◽  
Vyacheslav V. Balashev ◽  
Vladimir V. Korobtsov ◽  
Artem A. Dimitriev ◽  
Victor A. Vikulov
Keyword(s):  
Response Time ◽  
Opposite Direction ◽  
Photovoltaic Effect ◽  
Inversion Layer ◽  
Light Spot ◽  
Electrical Field ◽  
Type Silicon ◽  
Conductivity Type ◽  
P Type

We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO2/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO2/n-Si and Fe/SiO2/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO2/Si interface. It was found that the response time in the Fe/SiO2/n-Si structure is 4.2 times faster than in the Fe/SiO2/p-Si structure due to the presence of an inversion layer in this structure.

Photovoltaic Characterization of Trapping in Porous Silicon

1994 ◽  
Vol 358 ◽  
Author(s):  
D. W. Boeringer ◽  
R. Tsu
Keyword(s):  
Porous Silicon ◽  
Photovoltaic Effect ◽  
Light Spot ◽  
Dangling Bond ◽  
Photogenerated Electrons ◽  
Device Applications ◽  
Photovoltaic Characterization ◽  
P Type ◽  
Silicon Based ◽  
Position Sensitive Detectors

ABSTRACTWe report the first observation of the lateral photovoltaic effect in porous silicon. Contacts placed on either side of a porous silicon region develop a voltage up to several millivolts if the sample is asymmetrically illuminated. If the light spot is closer to one contact, the voltage will have one polarity; if it is closer to the other contact, the polarity will be opposite. In the case of n-type, the contact nearest the light spot is positive; for p-type, the contact nearest the light spot is negative In the region between the contacts, the photovoltage varies almost linearly with the position of the light spot, over a distance 4.5 cm across. The origin of our lateral photoeffect may be explained by the trapping of photoexcited carriers by a pair of dangling bond centers in porous silicon. In the case of p-type, the photogenerated electrons are trapped by the dangling bond states while holes diffuse away in the substrate. The situation for n-type is opposite; holes are trapped by the dangling bond states while electrons diffuse away in the substrate. This differs from the conventional lateral photoeffect, which arises under the nonuniform illumination of a junction between two layers of differing conductivities. Hamamatsu sells silicon-based position-sensitive detectors with a resolution down to 0.1 µm. The possibility of using this lateral photoeffect to characterize these dangling bond states in porous silicon as well as several possible device applications will be discussed.

Lateral photovoltaic effect in p-type silicon induced by surface states

2017 ◽  
Vol 110 (12) ◽  
pp. 121103 ◽  
Author(s):  
Xu Huang ◽  
Chunlian Mei ◽  
Zhikai Gan ◽  
Peiqi Zhou ◽  
Hui Wang
Keyword(s):  
Photovoltaic Effect ◽  
Surface States ◽  
Type Silicon ◽  
P Type

scholarly journals Correlation Between Lateral Photovoltaic Effect and Conductivity in p-type Silicon Substrates

2013 ◽  
Vol 34 (6) ◽  
pp. 1845-1847 ◽  
Author(s):  
Seung-Hoon Lee ◽  
Muncheol Shin ◽  
Seongpil Hwang ◽  
Sung Heum Park ◽  
Jae-Won Jang
Keyword(s):  
Photovoltaic Effect ◽  
Silicon Substrates ◽  
Type Silicon ◽  
P Type

Valley splitting in an n-channel (100) inversion layer on p-type silicon

1976 ◽  
Vol 58 (1) ◽  
pp. 254-260 ◽  
Author(s):  
Fusayoshi J. Ohkawa ◽  
Yasutada Uemura
Keyword(s):  
Inversion Layer ◽  
Valley Splitting ◽  
Type Silicon ◽  
P Type

Lateral photovoltaic effect in nitrogen‐implanted p‐type silicon

1972 ◽  
Vol 21 (9) ◽  
pp. 423-424 ◽  
Author(s):  
Hirohiku Niu ◽  
Tetsuro Matsuda ◽  
Kenji Yamauchi ◽  
Munezo Takai
Keyword(s):  
Photovoltaic Effect ◽  
Type Silicon ◽  
P Type

scholarly journals Сравнительное исследование латерального фотовольтаического эффекта в структурах Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/n-Si и Fe-=SUB=-3-=/SUB=-O-=SUB=-4-=/SUB=-/SiO-=SUB=-2-=/SUB=-/p-Si

2018 ◽  
Vol 60 (7) ◽  
pp. 1311
Author(s):  
T.A. Писаренко ◽  
В.В. Балашев ◽  
В.A. Викулов ◽  
A.A. Димитриев ◽  
В.В. Коробцов
Keyword(s):  
Film Thickness ◽  
Comparative Study ◽  
Photovoltaic Effect ◽  
Interface States ◽  
Thickness Dependence ◽  
Light Spot ◽  
Polarity Inversion ◽  
Conductivity Type

AbstractThe results of a comparative study of the lateral photovoltaic effect in Fe_3O_4/SiO_2/ n -Si and Fe_3O_4/SiO_2/ p -Si structures are presented. The lateral photovoltage reaches its maximum near the measurement contacts in both structures, but the signs of this voltage differ. As the light spot moves away from the contacts, the photovoltage varies linearly in Fe_3O_4/SiO_2/ n -Si and decreases exponentially in Fe_3O_4/SiO_2/ p -Si. It is found that interface states at the SiO_2/Si interface induce the photovoltage polarity inversion associated with a change in the conductivity type of silicon. An extreme thickness dependence of the photovoltage with an optimum Fe_3O_4 film thickness of ~50 nm is observed in both structures.

The Lateral Photovoltaic Effect in the Fe3O4/SiO2/p-Si Structure

2018 ◽  
Vol 386 ◽  
pp. 143-148
Author(s):  
Tatiana A. Pisarenko ◽  
Vyacheslav V. Balashev ◽  
Vladimir V. Korobtsov ◽  
Artem A. Dimitriev ◽  
Victor A. Vikulov
Keyword(s):  
Barrier Height ◽  
Silicon Substrate ◽  
Photovoltaic Effect ◽  
Interface States ◽  
Light Spot ◽  
Conductivity Type ◽  
Extreme Dependence ◽  
Magnetite Film

We report on the results of the study of the lateral photovoltaic effect in the Fe3O4/SiO2/p-Si structure. It is found that maximum of the lateral photovoltage is localized near the measuring contacts and rapidly attenuates when the light spot moves away from them. Correspondence of the photovoltage sign to the conductivity type of the silicon substrate is achieved only taking into account the interface states at the SiO2/p-Si interface. The extreme dependence of the lateral photovoltage on the thickness of the Fe3O4film is observed, which is due to the fact that the barrier height is laterally inhomogeneous at small thicknesses of magnetite film, whereas at higher thicknesses of the film the lateral photovoltaic effect is short-circuited by this film.

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