We report on the results of the study of the lateral photovoltaic effect in the Fe/SiO2/Si structures with n-and p-type silicon. It is found that in both cases the photovoltage signal varies linearly when the light spot moves between the electrodes. It is established that the sensitivity of lateral photovoltaic effect in Fe/SiO2/n-Si and Fe/SiO2/р-Si structures is 32.3 and 14.7 mV/mm, respectively. When the silicon conductivity type changes, there is an inversion of photovoltage polarity as a result of the opposite direction of the built-in electrical field at the SiO2/Si interface. It was found that the response time in the Fe/SiO2/n-Si structure is 4.2 times faster than in the Fe/SiO2/p-Si structure due to the presence of an inversion layer in this structure.
Determination of piezo-resistive coefficient π44 in p-type silicon by comparing simulation and measurement of pressure sensors