Growth, Microstructure and Properties of Epitaxial La1-XSrxMnO3 Thin Films on Various Substrates Using RF Magnetron Sputtering

2011 ◽  
Vol 14 ◽  
pp. 83-92 ◽  
Author(s):  
Y. Fang ◽  
V.R. Sakhalkar ◽  
J. He ◽  
H.Q. Jiang ◽  
Jiechao Jiang ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Bulk Material ◽  
Rf Magnetron Sputtering ◽  
Tetragonal Structure ◽  
Magnetic Studies ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Mgo Substrate

Synthesis of high quality epitaxial LaMnO3 and (La,Sr)MnO3 films on large areas is highly desirable. Recently, we have deposited LaMnO3 and (La,Sr)MnO3 films on the MgO (001) and LaAlO3 (001) substrates using RF magnetron sputtering. Highly epitaxial quality thin films have been successfully obtained at 750 °C by manipulating processing parameters as characterized by X-ray diffraction, electron diffraction and HRTEM. The epitaxial LaMnO3 and (La,Sr)MnO3 thin films have either a tetragonal or orthorhombic crystal structure depending on the film (target) composition and substrate type. The (La,Sr)MnO3 films were found to have an orthorhombic crystal structure when deposited on LaAlO3 substrate and a tetragonal structure when deposited on MgO substrate; whereas LaMnO3 films have a tetragonal structure when deposited on LaAlO3 substrate and an orthorhombic crystal structure when deposited on MgO substrate. The orthorhombic structures of the (La,Sr)MnO3 film on LaAlO3 and LaMnO3 on MgO are oriented with their c-axis on the film plane. Magnetic studies show that the epitaxial films have higher phase transition temperature than the corresponding bulk material and to those obtained using pulse laser deposition. Successful synthesis of highly epitaxial quality films by RF magnetron sputtering over a larger area can result in reduced cost for fabricating and processing epitaxial thin films.

Orthorhombic crystal structure of the A-DNA octamer d(GTACGTAC). Comparison with the tetragonal structure

1993 ◽  
Vol 213 (2) ◽  
pp. 673-682 ◽  
Author(s):  
Beatrice LANGLOIS d'ESTAINTOT ◽  
Alain DAUTANT ◽  
Christian COURSEILLE ◽  
Gilles PRECIGOUX
Keyword(s):  
Crystal Structure ◽  
Tetragonal Structure ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure

Preparation and Character Measurements of AlN Films for RF Magnetron Sputtering

2013 ◽  
Vol 663 ◽  
pp. 409-412
Author(s):  
Tai Long Gui ◽  
Si Da Jiang ◽  
Chun Cheng Ban ◽  
Jia Qing Liu
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Refractive Index ◽  
Magnetron Sputtering ◽  
Total Pressure ◽  
Rf Magnetron Sputtering ◽  
Elliptical Polarization ◽  
Dielectric Thin Films ◽  
Temperature Changes ◽  
Sputtering Power

AlN dielectric thin films were deposited on N type Si(100) substrate by reactive radio frequency magnetron sputtering that directly bombardment AlN target under different sputtering-power and total pressure. The crystal structure,composition,surface and refractive index of the thin films were studied by XRD, SEM, AFM and elliptical polarization instrument. The results show that the surface and refractive of the thin films strongly depends on the sputtering-power and total pressure,the good uniformity and smoothness is found at 230 W, Ar flow ratio 5.0 LAr/sccm, substrate temperature 100°Cand 1.2 Pa. The crystal structure of the as-deposited thin-films is amorphous，then it transforms from blende structure to wurtzite structure as the rapid thermal annealing(RTA) temperature changes from 600 to 1200°C. The refractive index also increases with the RTA temperature it is increasing significantly from 800 to 1000°C．

Reactive RF magnetron sputtering epitaxy of NiO thin films on (0001) sapphire and (100) MgO substrates

2021 ◽  
Author(s):  
Keisuke Nishimoto ◽  
Kohei Shima ◽  
Shigefusa F. Chichibu ◽  
Mutsumi Sugiyama
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Domain Structure ◽  
Sapphire Substrate ◽  
Rf Magnetron Sputtering ◽  
Optical Devices ◽  
Single Domain ◽  
Grain Structures ◽  
Reactive Rf Magnetron Sputtering ◽  
Mgo Substrate

Abstract Epitaxial growths of NiO thin films were realized on (0001) sapphire and (100) MgO substrates by using a reactive RF magnetron sputtering method. The NiO epilayers grown on a (0001) sapphire exhibited the (111)-oriented double-domain structure, which comprised of a triangular and its inverted triangular grains. Meanwhile, the NiO epilayers on a (100) MgO exhibited the (100)-oriented single-domain structure, which comprised of quadrangular grains. The observed grain structures most likely reflect the growth planes of respective NiO epilayers, and, mixed crystals of NiO and MgO were present near the interface. Therefore, A (100) MgO substrate is suitable for obtaining a single-domain NiO epilayer, whereas a (0001) sapphire substrate is suitable for obtaining a NiO epilayer without interdiffusion between NiO and sapphire. These NiO epilayers will be expected for applying the physical properties evaluation using photoluminescence or Hall measurements, and the fabrication of electrical or optical devices.

STUDY ON THE SUPERCONDUCTIVITY OF Ba2(Y1−xLax)Cu3O7−y

1988 ◽  
Vol 02 (03n04) ◽  
pp. 621-628
Author(s):  
C. DONG ◽  
J.K. LIANG ◽  
C.G. CUI ◽  
S.L. LI ◽  
Y.M. NI ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Continuous Solid Solution ◽  
Mixed Valence ◽  
Tetragonal Structure ◽  
Nominal Composition ◽  
X Ray Diffraction ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure ◽  
Semiconductor Behavior ◽  
Low Dimensional

A series of samples with the nominal composition Ba 2( Ba 1−x La x) Cu 3 O 7−y, (0≤x≤1), was synthesized by solid state reaction. An X-ray diffraction study showed that a continuous solid solution exists between Ba 2 YCu 3 O 7−y and Ba 2 LaCu 3 O 7−y and there is a composition induced order-disorder transition from an orthorhombic to a tetragonal structure when x value is near 0.9. All the samples with orthorhombic crystal structure are superconductors with Tc onset above 90K. The transition midpoint temperature decreases smoothly when La content increases. The samples with x≥0.9 have a tetragonal structure and show semiconductor behavior with an exception of the x=1.0 sample which is a superconductor. Based on our previous and present studies, we concluded that the low dimensional character of the crystal structure and the mixed-valence state of copper or oxygen are necessary conditions for high-Tc superconductivity in copper-containing oxides.

scholarly journals Uniaxial contribution to the magnetic anisotropy of La0.67Sr0.33MnO3 thin films induced by orthorhombic crystal structure

2011 ◽  
Vol 323 (21) ◽  
pp. 2632-2638 ◽  
Author(s):  
Hans Boschker ◽  
Mercy Mathews ◽  
Peter Brinks ◽  
Evert Houwman ◽  
Arturas Vailionis ◽  
...  
Keyword(s):  
Crystal Structure ◽  
Thin Films ◽  
Magnetic Anisotropy ◽  
Orthorhombic Crystal ◽  
Orthorhombic Crystal Structure

Epitaxial PZT thin films on TiOxcovered Pt/MgO substrate by RF magnetron sputtering

2001 ◽  
Vol 256 (1) ◽  
pp. 47-68 ◽  
Author(s):  
R. Bouregba ◽  
G. Poullain ◽  
B. Vilquin ◽  
H. Murray
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Rf Magnetron Sputtering ◽  
Pzt Thin Films ◽  
Mgo Substrate
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