Continuous Fabrication Process of Grain Controlled Aluminum Material for Rheology Forming and Its Microstructural Evaluation

2004 ◽  
Vol 274-276 ◽  
pp. 547-552
Author(s):  
P.K. Seo ◽  
Chung Gil Kang ◽  
M.D. Lim

Author(s):  
Ian Roberts ◽  
Guy Baylac ◽  
Erik Zeelenberg

The vast majority of applications of EN 13445-5:2002 will be for individually designed pressure vessels, but there will be a significant sector of serially produced pressure vessels, built in a continuous fabrication process to a single design. This paper presents Annex A of EN 13445-5 which addresses inspection and testing of these pressure vessels and gives the thinking and rationale behind these requirements.



2014 ◽  
Vol 18 (sup5) ◽  
pp. S5-21-S5-24
Author(s):  
M. K. Kwak ◽  
C. W. Park


Author(s):  
Hyun Chan Kim ◽  
Pooja S. Panicker ◽  
Lindong Zhai ◽  
Qin Yu Zhu ◽  
Jaehwan Kim


2019 ◽  
Vol 2019 ◽  
pp. 1-5
Author(s):  
Sung Ho Lee ◽  
Cheol Woo Park ◽  
Moon Kyu Kwak

In this paper, we report a new method for continuous fabrication of dry adhesives composed of microstructures with mushroom-shaped ends. Conventional mushroom microstructure fabrication is performed with a simple molding technique using a reversed phase master. In a typical fabrication process, thin- and wide-tip portions may be ripped during demolding, making it difficult to use in a continuous process. It is also difficult to apply the mushroom structure master to a continuous process system in roll form. Here, a continuous fabrication process was developed by applying the method of fabricating a wide tip using a tip inking method after forming a micropillar. Through the continuous process, the dry adhesive was successfully fabricated and the durability was measured with a reasonable pull-off strength (13 N/cm2). In addition to the reasonable adhesion, high durability is guaranteed, and fabricated dry adhesives are expected to be used in various fields.



Author(s):  
Jaehwan Kim ◽  
Pooja S. Panicker ◽  
Hyun-Chan Kim ◽  
Dickens O. Agumba ◽  
Samia Adil ◽  
...  


2019 ◽  
Vol 2019.27 (0) ◽  
pp. 514
Author(s):  
Hiromi MOROHASHI ◽  
Yoshihiko HANGAI ◽  
Hidetoshi FUJII ◽  
Yasuhiro AOKI ◽  
Nobuhiro YOSHIKAWA


Author(s):  
K. B. Alexander ◽  
P. F. Becher

The presence of interfacial films at the whisker-matrix interface can significantly influence the fracture toughness of ceramic composites. The film may alter the interface debonding process though changes in either the interfacial fracture energy or the residual stress at the interface. In addition, the films may affect the whisker pullout process through the frictional sliding coefficients or the extent of mechanical interlocking of the interface due to the whisker surface topography.Composites containing ACMC silicon carbide whiskers (SiCw) which had been coated with 5-10 nm of carbon and Tokai whiskers coated with 2 nm of carbon have been examined. High resolution electron microscopy (HREM) images of the interface were obtained with a JEOL 4000EX electron microscope. The whisker geometry used for HREM imaging is described in Reference 2. High spatial resolution (< 2-nm-diameter probe) parallel-collection electron energy loss spectroscopy (PEELS) measurements were obtained with a Philips EM400T/FEG microscope equipped with a Gatan Model 666 spectrometer.



Author(s):  
M.G. Rosenfield

Minimum feature sizes in experimental integrated circuits are approaching 0.5 μm and below. During the fabrication process it is usually necessary to be able to non-destructively measure the critical dimensions in resist and after the various process steps. This can be accomplished using the low voltage SEM. Submicron linewidth measurement is typically done by manually measuring the SEM micrographs. Since it is desirable to make as many measurements as possible in the shortest period of time, it is important that this technique be automated.Linewidth measurement using the scanning electron microscope is not well understood. The basic intent is to measure the size of a structure from the secondary electron signal generated by that structure. Thus, it is important to understand how the actual dimension of the line being measured relates to the secondary electron signal. Since different features generate different signals, the same method of relating linewidth to signal cannot be used. For example, the peak to peak method may be used to accurately measure the linewidth of an isolated resist line; but, a threshold technique may be required for an isolated space in resist.



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