Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution

2005 ◽  
Vol 277-279 ◽  
pp. 1023-1028
Author(s):  
Sung Ho Hwang ◽  
Jung Il Lee ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Il Ki Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy State ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Modes ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled ◽  
Gaas Quantum Dot

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

scholarly journals Исследование структурных и люминесцентных свойств гетероструктур InAs/GaAs с легированными Bi потенциальными барьерами

2018 ◽  
Vol 52 (6) ◽  
pp. 581
Author(s):  
А.С. Пащенко ◽  
Л.С. Лунин ◽  
С.Н. Чеботарев ◽  
М.Л. Лунина
Keyword(s):  
Quantum Dots ◽  
Emission Peak ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Potential Barriers ◽  
Atomic Force ◽  
Gaas Barrier ◽  
Gaas Quantum Dot ◽  
Crystal Lattice Parameters

AbstractThe influence of Bi in GaAs barrier layers on the structural and optical properties of InAs/GaAs quantum-dot heterostructures is studied. By atomic-force microscopy and Raman spectroscopy, it is established that the introduction of Bi into GaAs to a content of up to 5 at % results in a decrease in the density of InAs quantum dots from 1.58 × 10^10 to 0.93 × 10^10 cm^–2. The effect is defined by a decrease in the mismatch between the crystal-lattice parameters at the InAs/GaAsBi heterointerface. In this case, an increase in the height of InAs quantum dots is detected. This increase is apparently due to intensification of the surface diffusion of In during growth at the GaAsBi surface. Analysis of the luminescence properties shows that the doping of GaAs potential barriers with Bi is accompanied by a red shift of the emission peak related to InAs quantum dots and by a decrease in the width of this peak.

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip

1999 ◽  
Vol 74 (6) ◽  
pp. 844-846 ◽  
Author(s):  
Ichiro Tanaka ◽  
I. Kamiya ◽  
H. Sakaki ◽  
N. Qureshi ◽  
S. J. Allen ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Electronic Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Self Assembled

Fabrication and Characterization of Stacked Self-Assembled In0.5Ga0.5As/GaAs Quantum Dots Grown by MOCVD

2014 ◽  
Vol 896 ◽  
pp. 215-218
Author(s):  
Didik Aryanto ◽  
Zulkafli Othaman ◽  
A. Khamim Ismail
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
X Ray Diffraction ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Metal Organic ◽  
Self Assembled

Stacked self-assembled In0.5Ga0.5As/GaAs quantum dots (QDs) were grown using metal organic chemical vapor deposition (MOCVD). Atomic force microscopy (AFM), transmission electron microscopy (TEM) and high resolution X-ray diffraction (HR-XDR) show the effects of stacking on morphology and structure of QDs. Strains due to the buried QDs affect the shape and alignment of the successive layers. Capping of these QDs also determine the quality of the top most QDs structure.

scholarly journals Distribution and shape of self-assembled InAs quantum dots grown on GaAs (001)

2000 ◽  
Vol 72 (1-2) ◽  
pp. 199-207 ◽  
Author(s):  
K. Zhang ◽  
J. Falta ◽  
Th. Schmidt ◽  
Ch. Heyn ◽  
G. Materlik ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Grazing Incidence ◽  
Inas Quantum Dots ◽  
Correlation Lengths ◽  
Force Microscopy ◽  
X Ray Scattering ◽  
Atomic Force ◽  
Incoming Beam ◽  
Facet Crystal ◽  
Self Assembled

Grazing incidence small angle X-ray scattering (GISAXS) and atomic force microscopy (AFM) experiments are employed to study self-assembled InAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) on GaAs (001). The GISAXS spectra show pronounced non-specular diffuse scattering satellite peaks with high diffraction orders up to ±3 along [110], [1-10], and [100] sample azimuthal orientations with respect to the incoming beam, indicating a lateral ordering of the InAs QDs. The correlation lengths of the lateral dot distribution are found to be identical along [110] and [1-10] but smaller along [100] direction. The ratio of the mean dot-dot distances along [100] and [1-10] azimuths is determined to be 1.13, indicating the anisotropic ordering of QD distribution. Broad diffraction peaks are observed at larger scattering angles and associated to dot facet crystal truncation rods (CTR). We determine {111}-like facets along [110] and [1-10] sample azimuths, and {101}-like facets along [100] azimuth.

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