scholarly journals Исследование структурных и люминесцентных свойств гетероструктур InAs/GaAs с легированными Bi потенциальными барьерами

2018 ◽  
Vol 52 (6) ◽  
pp. 581
Author(s):  
А.С. Пащенко ◽  
Л.С. Лунин ◽  
С.Н. Чеботарев ◽  
М.Л. Лунина
Keyword(s):  
Quantum Dots ◽  
Emission Peak ◽  
Structural And Optical Properties ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Potential Barriers ◽  
Atomic Force ◽  
Gaas Barrier ◽  
Gaas Quantum Dot ◽  
Crystal Lattice Parameters

AbstractThe influence of Bi in GaAs barrier layers on the structural and optical properties of InAs/GaAs quantum-dot heterostructures is studied. By atomic-force microscopy and Raman spectroscopy, it is established that the introduction of Bi into GaAs to a content of up to 5 at % results in a decrease in the density of InAs quantum dots from 1.58 × 10^10 to 0.93 × 10^10 cm^–2. The effect is defined by a decrease in the mismatch between the crystal-lattice parameters at the InAs/GaAsBi heterointerface. In this case, an increase in the height of InAs quantum dots is detected. This increase is apparently due to intensification of the surface diffusion of In during growth at the GaAsBi surface. Analysis of the luminescence properties shows that the doping of GaAs potential barriers with Bi is accompanied by a red shift of the emission peak related to InAs quantum dots and by a decrease in the width of this peak.

Alignment of InAs Quantum Dots on GaAs Using the Manipulation of Strain Fields

2000 ◽  
Vol 618 ◽  
Author(s):  
Kwang Moo Kim ◽  
Young Ju Park ◽  
Young Min Park ◽  
Jong Bum Nah ◽  
Chan Kyeong Hyon ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Molecular Beam ◽  
Size Distributions ◽  
Strain Fields ◽  
Inas Quantum Dots ◽  
Strained Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Dislocation Arrays ◽  
Gaas Barrier

ABSTRACTWe fabricated InAs self-assembled quantum dots (QDs) on strained layer using molecular beam epitaxy. The strained layer consisted of InAs/GaAs superlattice(SL) and GaAs barrier layer on (001) GaAs substrate. Through controlling thickness of the strained layer, we formed two-dimensional alignments of QDs on misfit dislocation arrays along <110> directions made by strained layer. The increase of the strained layer thickness resulted in a stronger alignment of QDs, which were observed by atomic force microscopy studies. The aligned QDs were confirmed to confine carriers well and have different size distributions by photoluminescence measurement.

Electrical and Optical Characterization of Energy States in Self-Assembled InAs/GaAs Quantum Dots with Size Distribution

2005 ◽  
Vol 277-279 ◽  
pp. 1023-1028
Author(s):  
Sung Ho Hwang ◽  
Jung Il Lee ◽  
Jin Dong Song ◽  
Won Jun Choi ◽  
Il Ki Han ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy State ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force ◽  
Growth Modes ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled ◽  
Gaas Quantum Dot

We report effects of the size and the energy state distribution on the electrical and optical properties in self-assembled InAs quantum dots. The results of characteristics measured using atomic force microscopy, photoluminescence and dark current are analyzed by way of a simulation assuming a Gaussian distribution in size and related energies. The samples investigated in this study are InAs/GaAs quantum dot infrared photodetector structures with an AlGaAs blocking layer grown by molecular beam epitaxy at different growth modes.

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

2003 ◽  
Vol 794 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Good Growth ◽  
Excitation Power Density ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Layer Deposition

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

Atomic force microscopy of InAs quantum dots on the vicinal surface of a GaAs crystal

2002 ◽  
Vol 28 (2) ◽  
pp. 139-141
Author(s):  
V. P. Evtikhiev ◽  
O. V. Konstantinov ◽  
E. Yu. Kotel’nikov ◽  
A. V. Matveentsev ◽  
A. N. Titkov ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Atomic Force Microscopy ◽  
Vicinal Surface ◽  
Gaas Crystal ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Atomic Force

Optical And Structural properties of Vertical Aligned Self-Assembled InAs Quantum Dots Multilayers

2001 ◽  
Vol 676 ◽  
Author(s):  
J. C. González ◽  
M. I. N. da Silva ◽  
W. N. Rodrigues ◽  
F. M. Matinaga ◽  
R. Magalhaes-Paniago ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Structural Properties ◽  
Molecular Beam ◽  
X Ray Diffraction ◽  
Inas Quantum Dots ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Transmission Electron ◽  
Self Assembled

ABSTRACTIn this work, we report optical and structural properties of vertical aligned self-assembled InAs quantum dots multilayers. The InAs quantum dots samples were grown by Molecular Beam Epitaxy. Employing Atomic Force Microscopy, Transmission Electron Microscopy, and Gracing Incident X-ray Diffraction we have studied the structural properties of samples with different number of periods of the multiplayer structure, as well as different InAs coverage. The optical properties were studied using Photoluminescence spectroscopy.

Growth and characterization of InAs quantum dots on GaAs (100) emitting at 1.31μm.

2003 ◽  
Vol 799 ◽  
Author(s):  
V. Celibert ◽  
B. Salem ◽  
G. Guillot ◽  
C. Bru-Chevallier ◽  
L. Grenouillet ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Excitation Power ◽  
Good Growth ◽  
Excitation Power Density ◽  
Inas Quantum Dots ◽  
Force Microscopy ◽  
Self Organized ◽  
Gas Source ◽  
Atomic Force ◽  
Layer Deposition

ABSTRACTSelf-organized InAs quantum dots (QDs) were grown in the Stranski-Krastanov regime, by gas-source molecular beam epitaxy (GSMBE), on (100) GaAs substrates. Two important parameters have been optimized in order to grow high quality QDs with a very good reproducibility: InAs growth rate and GaAs cap layer deposition rate. Atomic force microscopy (AFM) analysis shows a unimodal QD distribution and the room temperature photoluminescence (RTPL) spectrum of the optimized sample reveals a 1.3 μm emission with a 19 meV full width at half maximum (FWHM). Photoluminescence (PL) measurements versus excitation power density and photoluminescence excitation (PLE) measurements clearly show multi-component PL emission from transitions associated with fundamental and related excited states of QDs. Furthermore a good growth reproducibility is observed. The results are promising for further work which will lead to laser fabrication.

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