Fracture Characteristic of Single Crystalline Silicon Using Nano-Indentation and Finite Element Analysis

Nano-indentation test is used widely to determine the fracture toughness of brittle materials and to provide information on important material properties such as the Young’s modulus and hardness. In this study, using nano-indentation testing, atomic force microscope (AFM), and finite element method (FEM), we performed the indentation fracture toughness and fracture strength measurement for a (100) single crystalline silicon at different load states. In addition, the loads of the phase transformation events during unloading were estimated by the load-depth curves. The phase transformation load and micro-crack propagation events at pop-out during the unloading process depended on the maximum applied indentation load.

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Fracture Characteristic of Single Crystalline Silicon Using Nano-Indentation and Finite Element Analysis

Fracture and Strength of Solids VI - Key Engineering Materials ◽

10.4028/0-87849-989-x.601 ◽

2006 ◽

pp. 601-606

Author(s):

Seung Baek ◽

Jae Mean Koo ◽

Chang Sung Seok

Keyword(s):

Finite Element Analysis ◽

Finite Element ◽

Crystalline Silicon ◽

Fracture Characteristic ◽

Single Crystalline Silicon ◽

Element Analysis ◽

Single Crystalline ◽

Nano Indentation

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Modeling of Mechanical Influence of Double-Beam Laser on Single-Crystalline Silicon

Archives of Metallurgy and Materials ◽

10.2478/amm-2013-0179 ◽

2013 ◽

Vol 58 (4) ◽

pp. 1381-1385 ◽

Cited By ~ 2

Author(s):

S.V. Shalupaev ◽

A.N. Serdyukov ◽

G.S. Mityurich ◽

M. Aleksiejuk ◽

Y.V. Nikitjuk ◽

...

Keyword(s):

Finite Element ◽

Laser Heating ◽

Laser Cutting ◽

Crystalline Silicon ◽

Laser Beams ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Beam Laser ◽

Double Beam ◽

Mechanical Influence

Abstract The results of finite-element modeling of controlled laser thermosplitting of crystalline silicon are presented. The case of treatment by two laser beam with wavelengths, namely 0.808 μm and 1.06 μm is studied. Calculations of the thermoelastic fields formed in a single-crystalline silicon wafer as a result of consecutive two-beam laser heating and action of coolant were performed for silicon crystalline orientations: (100), (110), (111). Modeling was performed for circular and U-shaped laser beams. The results received in the presented work, can be used for the process optimization concerning the precise separation of silicon wafers by laser cutting.

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Pressure-induced amorphization in the nanoindentation of single crystalline silicon

RSC Advances ◽

10.1039/c6ra26094b ◽

2017 ◽

Vol 7 (3) ◽

pp. 1357-1362 ◽

Cited By ~ 11

Author(s):

Jing Han ◽

Song Xu ◽

Jiapeng Sun ◽

Liang Fang ◽

Hua Zhu

Keyword(s):

Molecular Dynamics ◽

Phase Transformation ◽

Mechanical Behavior ◽

Molecular Dynamics Simulations ◽

Silicon Surface ◽

Large Scale ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Dynamics Simulations

Large-scale molecular dynamics simulations of nanoindentation on a (100) oriented silicon surface were performed to investigate the mechanical behavior and phase transformation of single crystalline silicon.

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21412 Indentation Crack Patterns and Fracture Toughness of Single-Crystalline Silicon Wafer Introduced by A Vickers Indenter

The Proceedings of Conference of Kanto Branch ◽

10.1299/jsmekanto.2010.16.483 ◽

2010 ◽

Vol 2010.16 (0) ◽

pp. 483-484

Author(s):

Masayoshi MIYASAKA ◽

Satoshi SUTOH ◽

Masayoshi TATENO ◽

Yoshiki GOTOH

Keyword(s):

Fracture Toughness ◽

Silicon Wafer ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Crack Patterns ◽

Vickers Indenter ◽

Indentation Crack

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508 Indentation Crack Patterns And Fracture Toughness of Single-Crystalline Silicon Wafer Using Indentation Fracture Method

The Proceedings of Yamanashi District Conference ◽

10.1299/jsmeyamanashi.2010.142 ◽

2010 ◽

Vol 2010 (0) ◽

pp. 142-143

Author(s):

Satoshi SUTO ◽

Masayoshi MIYASAKA ◽

Masayoshi TATENO ◽

Yoshiki GOTOH

Keyword(s):

Fracture Toughness ◽

Silicon Wafer ◽

Crystalline Silicon ◽

Single Crystalline Silicon ◽

Indentation Fracture ◽

Single Crystalline ◽

Crack Patterns ◽

Indentation Crack

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Nanoindentation of Silicon

Materials Science Forum ◽

10.4028/www.scientific.net/msf.604-605.29 ◽

2008 ◽

Vol 604-605 ◽

pp. 29-36 ◽

Cited By ~ 2

Author(s):

Péter M. Nagy ◽

P. Horváth ◽

Gábor Pető ◽

Erika Kálmán

Keyword(s):

Atomic Force Microscopy ◽

Phase Transformation ◽

Crystalline Silicon ◽

Defect Density ◽

Single Crystalline Silicon ◽

Single Crystalline ◽

Force Microscopy ◽

Atomic Force ◽

Cube Corner ◽

Loading And Unloading

The nanoindentation behaviours of single crystalline silicon samples has gained wide attention in recent years, because of the anomaly effects in the loading curve, caused by the pressure induced phase transformation of silicon. To further enlighten the phenomenon bulk, ion-implanted, single crystalline Si samples have been studied by nanoindentation and by atomic force microscopy. The implantation of Si wafers was carried out by P+ ions at 40 KeV accelerating voltage and 80 ions/cm2 dose, influencing the defect density and structure of the Si material in shallow depth at the surface. Our experiments provide Young’s modulus and hardness data measured with Berkovich-, spherical- and cube corner indenters, statistics of the pop-in and pop-out effects in the loading- and unloading process, and interesting results about the piling-up behaviour of the Si material.

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A constitutive material model for a commercial PMMA bone cement using a combination of nano-indentation test and finite element analysis

Polymer Testing ◽

10.1016/j.polymertesting.2017.01.031 ◽

2017 ◽

Vol 59 ◽

pp. 328-335 ◽

Cited By ~ 13

Author(s):

H. Asgharzadeh Shirazi ◽

S.A. Mirmohammadi ◽

M. Shaali ◽

A. Asnafi ◽

M.R. Ayatollahi

Keyword(s):

Finite Element Analysis ◽

Finite Element ◽

Bone Cement ◽

Indentation Test ◽

Material Model ◽

Element Analysis ◽

Nano Indentation ◽

Constitutive Material Model ◽

Pmma Bone Cement ◽

Constitutive Material

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Nanoscale plastic deformation mechanisms of single crystalline silicon under compression, tension and indentation

Journal of Micromechanics and Molecular Physics ◽

10.1142/s2424913016400075 ◽

2016 ◽

Vol 01 (03n04) ◽

pp. 1640007 ◽

Cited By ~ 3

Author(s):

Yu Hong ◽

Ning Zhang ◽

Liming Xiong

Keyword(s):

Plastic Deformation ◽

Phase Transformation ◽

Crystalline Silicon ◽

Transformation Process ◽

Deformation Mechanisms ◽

Displacement Curve ◽

Single Crystalline Silicon ◽

Stress Plateau ◽

Single Crystalline ◽

Plastic Deformation Behavior

Mechanical behavior and underlying nanoscale plastic deformation mechanisms of single crystalline silicon under compression, tension and indentation are investigated through molecular dynamics in this work. Simulation results show that phase transformation from diamond cubic Si-I to [Formula: see text]-Sn is responsible for the plastic deformation behavior of Si both under compression and nanoindentation. A stress plateau is observed when the specimen is compressed uniaxially. Si-I to [Formula: see text]-Sn phase transformation has been demonstrated to be responsible for such stress plateau. Periodic boundary condition is found not suitable to study the tensile strength of silicon pillars. A pop-in behavior is observed in the force–displacement curve of nanoindentation. It has been proved that this pop-in region is induced by Si-I to [Formula: see text]-Sn phase transformation. Through tracking the atom stress, shear stress rather than normal stress is revealed to dominate the phase transformation process. During nanoindentation, to exclude size effect the substrate should be larger enough than the indenter.

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