Study on Ferroelectric Properties of Nd-Doped Bi4Ti3O12 Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 336-338 ◽  
pp. 146-148
Author(s):  
Y.H. Sun ◽  
X.B. Liu ◽  
Min Chen ◽  
J. Liu ◽  
S. Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Spin Coating ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates

Nd-doped bismuth titanate Bi4-xNdxTi3O12 (BNT) thin films were fabricated on Pt/Ti/SiO2/Si substrates by sol-gel method and spin-coating technique. The structures and the ferroelectric properties of the films were investigated. Nd doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 260 kV/cm, Pr and Ec of the BNT film with x=0.5 annealed at 650oC are 19 μC/cm2 and 135 kV/cm, respectively. Moreover, the BNT film with x=0.5 showed a fatiguefree behavior up to 3×1010 read/write cycles.

Ferroelectric Properties of Sol-Gel Derived Ca1-xSrxBi4Ti4O15 Thin Films

2008 ◽  
Vol 368-372 ◽  
pp. 100-102 ◽  
Author(s):  
Su Hua Fan ◽  
Jing Xu ◽  
Guang Da Hu ◽  
Bo He ◽  
Feng Qing Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Fatigue Resistance ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
High Concentration ◽  
Gel Method ◽  
Si Substrates

Ca1-xSrxBi4Ti4O15 thin films were fabricated by sol-gel method on Pt(100)/Ti/SiO2/Si substrates. Influence of Sr content on the microstructure and ferroelectric properties of Ca1-xSrxBi4Ti4O15 thin films were systematically studied. The results indicate that Ca0.4Sr0.6Bi4Ti4O15 thin film has better ferroelectric properties with remanent polarization (2Pr) of 29.1+C/cm2, coercive field (2Ec) of 220 kV/cm. Furthermore, the film has good fatigue resistance. The better ferroelectric properties of Ca0.4Sr0.6Bi4Ti4O15 thin film originate from the relatively high concentration of a-axis oriented grains.

Morphology and ferroelectric properties of Ce-substituted Bi4 Ti3 O12 thin films prepared by sol-gel method

2015 ◽  
Vol 22 (5) ◽  
Author(s):  
Sanxi Li ◽  
Nan Wei ◽  
Wenzheng Zhang
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

AbstractThe Ce-substituted bismuth titanate (Bi

Electrical Characteristics and Microstructures of Ce-Doped Bi4Ti3O12 Films

2008 ◽  
Vol 368-372 ◽  
pp. 91-94
Author(s):  
S. Chen ◽  
A.H. Cai ◽  
X.A. Mei ◽  
Chong Qing Huang ◽  
W.K. An ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Coercive Field ◽  
Marked Improvement ◽  
Remanent Polarization ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Rf Magnetron Sputtering ◽  
Electrical Characteristics ◽  
Si Substrates

Sm-doped bismuth titanate and random oriented Bi4-xCexTi3O12 (BCT) thin films were fabricated on Pt/Ti/SiO2/Si substrates rf magnetron sputtering technique. The structures and the ferroelectric properties of the films were investigated. Ce doping leads to a marked improvement in the remanent polarization (Pr) and the coercive field (Ec). At the applied electric field of 100 kV/cm, Pr and Ec of the BCT (x = 0.8) film annealed at 650 oC are 20.5 μC/cm2 and 60 KV/cm, respectively. However, after 3 × 1010 switching cycles, 20% degradation of 2Pr is observed in the film.

Ferroelectric properties of lanthanum-doped bismuth titanate thin films grown by a sol–gel method

2005 ◽  
Vol 472 (1-2) ◽  
pp. 90-95 ◽  
Author(s):  
Ji Cheul Bae ◽  
Sang Su Kim ◽  
Eun Kyung Choi ◽  
Tae Kwon Song ◽  
Won-Jeong Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Bismuth Titanate ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Microstructure and ferroelectric properties of compositionally graded Nd-doped Bi4Ti3O12 thin films prepared by sol–gel method

2012 ◽  
Vol 23 (9) ◽  
pp. 1711-1714 ◽  
Author(s):  
Changyong Liu ◽  
Yiping Gong ◽  
Dongyun Guo ◽  
Chuanbin Wang ◽  
Qiang Shen ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Effect of Tb content on microstructure and ferroelectric properties of Bi4−x Tb x Ti3O12 thin films grown by sol–gel method

2012 ◽  
Vol 64 (3) ◽  
pp. 711-717 ◽  
Author(s):  
Ling Pei ◽  
Ni Hu ◽  
Gang Deng ◽  
Yiwan Chen ◽  
Yeguang Bie ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method

Synthesis and Ferroelectric Properties of Sol–Gel Derived Intergrowth-Superlattice-Structured SrBi4Ti4O15-Bi4Ti3O12 Thin Films

2011 ◽  
Vol 197-198 ◽  
pp. 1781-1784
Author(s):  
Hua Wang ◽  
Jian Li ◽  
Ji Wen Xu ◽  
Ling Yang ◽  
Shang Ju Zhou
Keyword(s):  
Thin Films ◽  
Remanent Polarization ◽  
Annealing Temperature ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Hysteresis Loops ◽  
Si Substrates ◽  
Gel Processing ◽  
Coercive Electric Field ◽  
Clockwise Hysteresis

Intergrowth-superlattice-structured SrBi4Ti4O15–Bi4Ti3O12(SBT–BIT) films prepared on p-Si substrates by sol-gel processing. Synthesized SBT–BIT films exhibit good ferroelectric properties. As the annealing temperature increases from 600°C to 700°C, the remanent polarization Prof SBT–BIT films increases, while the coercive electric field Ecdecreases. SBT–BIT films annealed at 700°C have a Prvalue of 18.9µC/cm2which is higher than that of SBT (16.8µC/cm2) and BIT (14.6µC/cm2), and have the lowest Ecof 142 kV/cm which is almost the same as that of SBT and BIT. The C-V curves of Ag/SBT-BIT/p-Si heterostructures show the clockwise hysteresis loops which reveal the memory effect due to the polarization. The memory window in C-V curve of Ag/SBT-BIT/p-Si is larger than that of Ag/SBT/p-Si heterostructure or Ag/BIT/p-Si heterostructure.

A Study on the Piezoelectric Properties of PZT and Doped PZT Thin Films by Sol-Gel Method

2010 ◽  
Vol 663-665 ◽  
pp. 650-653
Author(s):  
Jin Moo Byun ◽  
Jeong Sun Han ◽  
Jae Hyoung Park ◽  
Seong Eui Lee ◽  
Hee Chul Lee
Keyword(s):  
Thin Films ◽  
Piezoelectric Coefficient ◽  
Energy Harvester ◽  
Sol Gel ◽  
Pure Perovskite Structure ◽  
Pzt Thin Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Si Substrates ◽  
Pzt Thin Film

This study examined the effect of crystalline orientation and dopants such as Nb and Zn on the piezoelectric coefficient of sol-gel driven Pb1(Zr0.52Ti0.48)O3(PZT) and doped PZT thin films. Crack-free 1-μm-thick PZT and doped PZT thin films prepared by using 2-Methoxyethanol-based sol-gel method were fabricated on Pt/Ti/SiO2/Si substrates. The highly (111) oriented PZT thin films of pure perovskite structure could be obtained by controlling various parameters such as a PbTiO3 seed layer and a concentration of sol-gel solution. The Nb-Zn doped PZT thin films exhibited high piezoelectric coefficient which was about 50 % higher than that of undoped PZT thin film. The highest measured piezoelectric coefficient was 240 pC/N, which could be applicable to piezoelectrically operated MEMS actuator, sensor, or energy harvester devices.

Preparation and ferroelectric properties of Bi3.4Ce0.6Ti3O12 thin films grown by sol-gel method

2008 ◽  
Vol 51 (1) ◽  
pp. 10-15 ◽  
Author(s):  
DongYun Guo ◽  
MeiYa Li ◽  
Jun Liu ◽  
BenFang Yu ◽  
Ling Pei ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Gel Method ◽  
Sol Gel Method
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