Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

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Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Open Physics ◽

10.1515/phys-2015-0006 ◽

2015 ◽

Vol 13 (1) ◽

Cited By ~ 6

Author(s):

Diana Nesheva ◽

Nikola Nedev ◽

Mario Curiel ◽

Valeri Dzhurkov ◽

Abraham Arias ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Radiation Dosimetry ◽

Gate Dielectric ◽

Gate Dielectrics ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Annealing Conditions ◽

Silicon Structures

AbstractThis article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

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MOS Structures Containing Si Nanocrystals for Applications in UV Dosimeters

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.605.380 ◽

2014 ◽

Vol 605 ◽

pp. 380-383 ◽

Cited By ~ 1

Author(s):

Abraham Arias ◽

Nicola Nedev ◽

Diana Nesheva ◽

Mario Curiel ◽

Emil Manolov ◽

...

Keyword(s):

Electric Field ◽

Gate Dielectric ◽

Uv Light ◽

Discharge Rate ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Internal Electric Field ◽

Semiconductor Structures ◽

Si Nanocrystals ◽

Mos Structures

Metal-Oxide-Semiconductor structures with semitransparent Au top electrode and containing Si nanocrystals in the gate dielectric are fabricated and studied. The structures can be charged negatively or positively by injecting or extracting electrons from the top electrode. Illumination with 395-400 nm, 10.4 mW UV light source causes discharge of previously charged structures with rate which varies between 2 mV/s and 12 mV/s. The discharge rate depends on the sign of the trapped charge, as well on the internal electric field in the gate dielectric.

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Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals

Microelectronics Reliability ◽

10.1016/j.microrel.2017.09.010 ◽

2017 ◽

Vol 78 ◽

pp. 227-232 ◽

Cited By ~ 3

Author(s):

S. Chatbouri ◽

M. Troudi ◽

A. Kalboussi ◽

A. Souifi

Keyword(s):

Metal Oxide ◽

Charge Transport ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Transport Mechanisms ◽

Semiconductor Structures ◽

Traps Effect

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Electrical Characterization and Dielectric Properties of Metal–Oxide–Semiconductor Structures Using High-κ CeZrO4Ternary Oxide as Gate Dielectric

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.05da02 ◽

2009 ◽

Vol 48 (5) ◽

pp. 05DA02 ◽

Cited By ~ 13

Author(s):

Pi-chun Juan ◽

Chuan-hsi Liu ◽

Cheng-li Lin ◽

Shin-chun Ju ◽

Main-gwo Chen ◽

...

Keyword(s):

Dielectric Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Electrical Characterization ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals for Application in Radiation Dosimeters

Sensor Letters ◽

10.1166/sl.2012.2575 ◽

2012 ◽

Vol 10 (3) ◽

pp. 833-837 ◽

Cited By ~ 8

Author(s):

N. Nedev ◽

E. Manolov ◽

D. Nesheva ◽

K. Krezhov ◽

R. Nedev ◽

...

Keyword(s):

Metal Oxide ◽

Silicon Nanocrystals ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Minority-carrier characteristics of InGaAs metal-oxide-semiconductor structures using atomic-layer-deposited Al2O3 gate dielectric

Applied Physics Letters ◽

10.1063/1.2357566 ◽

2006 ◽

Vol 89 (13) ◽

pp. 132103 ◽

Cited By ~ 18

Author(s):

Y. Xuan ◽

P. D. Ye ◽

H. C. Lin ◽

G. D. Wilk

Keyword(s):

Metal Oxide ◽

Gate Dielectric ◽

Minority Carrier ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures ◽

Al2o3 Gate Dielectric

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Electrical Characterization of MOS Structures with Silicon Nanocrystals Suitable for X-Ray Detection

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.543.150 ◽

2013 ◽

Vol 543 ◽

pp. 150-153

Author(s):

David Mateos ◽

Nicola Nedev ◽

Diana Nesheva ◽

Mario Curiel ◽

Emil Manolov ◽

...

Keyword(s):

Silicon Nanocrystals ◽

Gate Dielectric ◽

Defect Density ◽

Electrical Characterization ◽

Oxide Semiconductor ◽

Electrical Measurements ◽

Transmission Electron ◽

Interface Defect ◽

Mos Structures

Metal-Oxide-Semiconductor structures with silicon nanocrystals in the oxide layer are prepared and characterized by Transmission Electron Microscopy and electrical measurements. High temperature annealing of SiO1.15 films at 1000 °C for 30 or 60 min leads to formation of silicon nanocrystals with diameters of 2-3 or 4-6 nm. The processes used to obtain the multilayer gate dielectric and to grow nanocrystals do not deteriorate the properties of the cSi wafer/thermal SiO2 interface. For the interface defect density and the fixed oxide charge values 1010 cm-2 eV-1 and ~ 1010 cm-2 were obtained.

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Tunneling current at the interface of silicon and silicon dioxide partly embedded with silicon nanocrystals in metal oxide semiconductor structures

Journal of Applied Physics ◽

10.1063/1.2425290 ◽

2007 ◽

Vol 101 (2) ◽

pp. 024315 ◽

Cited By ~ 23

Author(s):

G. Chakraborty ◽

S. Chattopadhyay ◽

C. K. Sarkar ◽

C. Pramanik

Keyword(s):

Metal Oxide ◽

Silicon Dioxide ◽

Silicon Nanocrystals ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Structures

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Theoretical Investigation of Ultrathin Gate Dielectrics

VLSI Design ◽

10.1155/2001/98032 ◽

2001 ◽

Vol 13 (1-4) ◽

pp. 135-143 ◽

Cited By ~ 3

Author(s):

Alexander A. Demkov ◽

Xiaodong Zhang ◽

Heather Loechelt

Keyword(s):

Gate Dielectric ◽

Gate Dielectrics ◽

Ballistic Transport ◽

Dielectric Materials ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Model ◽

Mos Structures ◽

Valence Band Discontinuity ◽

Transport Approach

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

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