scholarly journals Theoretical Investigation of Ultrathin Gate Dielectrics

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 135-143 ◽  
Author(s):  
Alexander A. Demkov ◽  
Xiaodong Zhang ◽  
Heather Loechelt
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Ballistic Transport ◽  
Dielectric Materials ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Si Model ◽  
Mos Structures ◽  
Valence Band Discontinuity ◽  
Transport Approach

We describe a theoretical methodology for screening potential gate dielectric materials. A recently proposed method for constructing realistic structural models of the Si-dielectric interface is used to generate the Si-SiO2-Si and Si-SiON-SiO2-Si model metal-oxide-semiconductor (MOS) structures. We discuss methods to estimate the valence band discontinuity at the corresponding interface. We use Landauer's ballistic transport approach to investigate the low bias leakage through these ultrathin dielectric layers.

Methods to Improve Properties of Gate Dielectrics in Metal-Oxide-Semiconductor

2012 ◽  
Vol 463-464 ◽  
pp. 1341-1345 ◽  
Author(s):  
Chong Liu ◽  
Xiao Li Fan
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Dielectric Materials ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Physical Limitation ◽  
Low Leakage ◽  
Mos Devices ◽  
Low Leakage Current ◽  
High K

This essay aims to introduce development of gate dielectrics. In present-day society, Si-based MOS has met its physical limitation. Scientists are trying to find a better material to reduce the thickness and dimension of MOS devices. While substrate materials are required to have a higher mobility, gate dielectrics are expected to have high k, low Dit and low leakage current. I conclude dielectrics in both Si-based and Ge-based MOS devices and several measures to improve the properties of these gate dielectric materials. I also introduce studies on process in our group and some achievements we have got. Significantly, this essay points out the special interest in rare-earth oxides functioning as gate dielectrics in recent years and summarizes the advantages and problems should be resolved in future.

A Thermodynamic Approach to Selecting Alternative Gate Dielectrics

MRS Bulletin ◽  
2002 ◽  
Vol 27 (3) ◽  
pp. 198-204 ◽  
Author(s):  
Darrell G. Schlom ◽  
Jeffrey H. Haeni
Keyword(s):  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Field Effect Transistors ◽  
Dielectric Materials ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Thermodynamic Approach ◽  
Suitable Alternative ◽  
Binary Oxides ◽  
Optical Bandgaps

AbstractAs a first step in the identification of suitable alternative gate dielectrics for metal oxide semiconductor field-effect transistors (MOSFETs), we have used tabulated thermodynamic data to comprehensively assess the thermodynamic stability of binary oxides and nitrides in contact with silicon at temperatures from 300 K to 1600 K. Sufficient data exist to conclude that the vast majority of binary oxides and nitrides are thermodynamically unstable in contact with silicon. The dielectrics that remain are candidate materials for alternative gate dielectrics. Of these remaining candidates, the oxides have a significantly higher dielectric constant (ĸ) than the nitrides. We then extend this thermodynamic approach to multicomponent oxides comprising the candidate binary oxides. The result is a relatively small number of silicon-compatible gate dielectric materials with ĸ values substantially greater than that of SiO2 and optical bandgaps ≥ eV.

Radiation Dosimeter Based on Metal-Oxide-Semiconductor Structures Containing Silicon Nanocrystals

2011 ◽  
Vol 495 ◽  
pp. 120-123 ◽  
Author(s):  
Nicola Nedev ◽  
Emil Manolov ◽  
Diana Nesheva ◽  
Kiril Krezhov ◽  
Roumen Nedev ◽  
...  
Keyword(s):  
Silicon Nanocrystals ◽  
Gate Dielectric ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Linear Variation ◽  
Γ Irradiation ◽  
Semiconductor Structures ◽  
Flatband Voltage ◽  
Mos Structures ◽  
Higher Doses

MOS structures containing silicon nanocrystals in the gate dielectric have been tested as dosimeters for ionizing radiation. Before irradiation the nanocrystals have been charged with electrons by applying a pulse to the gate electrode. The γ-irradiation with doses in the range 0-100 Gy causes approximately linear variation of the flatband voltage, resulting in sensitivities of ~ 2.5 mV/Gy. At higher doses the sensitivity decreases because of decrease of the oxide electric field.

Study on electron trapping and interface states of various gate dielectric materials in 4H–SiC metal-oxide-semiconductor capacitors

2000 ◽  
Vol 77 (13) ◽  
pp. 2054-2056 ◽  
Author(s):  
Won-ju Cho ◽  
Ryoji Kosugi ◽  
Junji Senzaki ◽  
Kenji Fukuda ◽  
Kazuo Arai ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Gate Dielectric ◽  
Dielectric Materials ◽  
Interface States ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Electron Trapping

scholarly journals Application of Metal-Oxide-Semiconductor structures containing silicon nanocrystals in radiation dosimetry

Open Physics ◽  
2015 ◽  
Vol 13 (1) ◽  
Author(s):  
Diana Nesheva ◽  
Nikola Nedev ◽  
Mario Curiel ◽  
Valeri Dzhurkov ◽  
Abraham Arias ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Silicon Nanocrystals ◽  
Radiation Dosimetry ◽  
Gate Dielectric ◽  
Gate Dielectrics ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Structures ◽  
Annealing Conditions ◽  
Silicon Structures

AbstractThis article makes a brief review of the most important results obtained by the authors and their collaborators during the last four years in the field of the development of metal-insulator-silicon structures with dielectric film containing silicon nanocrystals, which are suitable for applications in radiation dosimetry. The preparation of SiOx films is briefly discussed and the annealing conditions used for the growth of silicon nanocrystals are presented. A two-step annealing process for preparation of metal-oxide-semiconductor structures with three-layer gate dielectrics is described. Electron Microscopy investigations prove the Si nanocrystals growth, reveal the crystal spatial distribution in the gate dielectric and provide evidences for the formation of a top SiO2 layerwhen applying the two-step annealing. Two types of MOS structures with three region gate dielectricswere fabricated and characterized by high frequency capacitance/conductancevoltage (C/G-V) measurements. The effect of gamma and ultraviolet radiation on the flatband voltage of preliminary charged metal-oxide-semiconductor structures is investigated and discussed.

MOS Structures Containing Si Nanocrystals for Applications in UV Dosimeters

2014 ◽  
Vol 605 ◽  
pp. 380-383 ◽  
Author(s):  
Abraham Arias ◽  
Nicola Nedev ◽  
Diana Nesheva ◽  
Mario Curiel ◽  
Emil Manolov ◽  
...  
Keyword(s):  
Electric Field ◽  
Gate Dielectric ◽  
Uv Light ◽  
Discharge Rate ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Internal Electric Field ◽  
Semiconductor Structures ◽  
Si Nanocrystals ◽  
Mos Structures

Metal-Oxide-Semiconductor structures with semitransparent Au top electrode and containing Si nanocrystals in the gate dielectric are fabricated and studied. The structures can be charged negatively or positively by injecting or extracting electrons from the top electrode. Illumination with 395-400 nm, 10.4 mW UV light source causes discharge of previously charged structures with rate which varies between 2 mV/s and 12 mV/s. The discharge rate depends on the sign of the trapped charge, as well on the internal electric field in the gate dielectric.

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