Fabrication and Electrical Evaluation of MoSi2-Si Composite Thin Films

Thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with a Si-to-Mo molar ratio of 1:X (2.0 X 2.5). The Hall coefficients were measured to identify the conduction mechanisms in the thin films. The sign and magnitude of the Hall coefficients revealed that thin films with X = 2.02.2 having a hexagonal crystal structure showed p-type conduction, while the mechanism for the n-type film with X = 2.33 was unknown and that for a composite of hexagonal and an unknown structure with X = 2.3, 2.4 and 2.5 showed mixed conduction.

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Resistivity of Thin Films of MoSi2–Si Composites

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.485.265 ◽

2011 ◽

Vol 485 ◽

pp. 265-268 ◽

Cited By ~ 1

Author(s):

Shinya Hikita ◽

Teppei Hayashi ◽

Yuuki Sato ◽

Shinzo Yoshikado

Keyword(s):

Thin Film ◽

Thin Films ◽

Temperature Coefficient ◽

Negative Temperature Coefficient ◽

Negative Temperature ◽

Hexagonal Structure ◽

Molar Ratio ◽

Radio Frequency Magnetron Sputtering ◽

Unknown Structure ◽

Temperature Coefficient Of Resistivity

Thin films of the composite of molybdenum silicate (MoSi2) and silicon (Si) were fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si. The composite thin film consisted of two types of molybdenum silicate with hexagonal and unknown crystal structures. The temperature dependence of the resistivity of a thin film was measured using the four-probe method. The sign of the temperature coefficient of the resistivity changed from positive to negative with increasing molar ratio of Si to Mo. It was suggested that molybdenum silicate with the hexagonal structure had both positive and negative temperature coefficients of resistivity, whereas the unknown structure showed only a negative temperature coefficient of resistivity.

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Temperature Dependence of Resistivity of MoSi2-Si Composite Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.582.161 ◽

2013 ◽

Vol 582 ◽

pp. 161-164

Author(s):

Ryo Kanai ◽

Shinya Hikita ◽

Yuuki Sato ◽

Shinzo Yoshikado

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Temperature Dependence ◽

Anderson Localization ◽

Molybdenum Disilicide ◽

Multiplicative Model ◽

Molar Ratio ◽

Radio Frequency Magnetron Sputtering ◽

Conduction Model ◽

Localization Model

The temperature dependence of resistivity for thin films of a composite of molybdenum disilicide (MoSi2) and silicon (Si) fabricated by radio frequency magnetron sputtering using a target made of a powder mixture of MoSi2 and Si with molar ratio of Si to Mo of 1:X (2.02X2.55) was analyzed. The temperature dependence could be explained by the multiplicative model consisting of a conduction model similar to the Grüneisen-Bloch model, a modified Anderson localization model for 2.02X2.21 and the modified Anderson localization model for 2.39X2.55 over a wide temperature range.

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Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.280-283.315 ◽

2007 ◽

Vol 280-283 ◽

pp. 315-318 ◽

Cited By ~ 1

Author(s):

Chong Liang ◽

De An Yang ◽

Jian Jing Song ◽

Ming Xia Xu

Keyword(s):

Thin Film ◽

Thin Films ◽

Grain Size ◽

Sol Gel ◽

Alumina Substrate ◽

Oxygen Sensitivity ◽

Coating Film ◽

Partial Pressures ◽

P Type ◽

Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

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Realization of p-type conduction in undoped MgxZn1−xO thin films by controlling Mg content

Applied Physics Letters ◽

10.1063/1.2816914 ◽

2007 ◽

Vol 91 (23) ◽

pp. 232115 ◽

Cited By ~ 49

Author(s):

Y. F. Li ◽

B. Yao ◽

Y. M. Lu ◽

Z. P. Wei ◽

Y. Q. Gai ◽

...

Keyword(s):

Thin Films ◽

P Type ◽

Mg Content ◽

Type Conduction

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Electronic structure and p -type conduction mechanism of spinel cobaltite oxide thin films

Physical Review B ◽

10.1103/physrevb.100.115301 ◽

2019 ◽

Vol 100 (11) ◽

Cited By ~ 11

Author(s):

X. C. Huang ◽

J. Y. Zhang ◽

M. Wu ◽

S. Zhang ◽

H. Y. Xiao ◽

...

Keyword(s):

Thin Films ◽

Electronic Structure ◽

Conduction Mechanism ◽

Oxide Thin Films ◽

P Type ◽

Type Conduction

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Electrical Properties of Nano-TiO2 Thin Film Prepared by Sol-Gel Precipitation Route Using Two-Point Probe Method

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.1109.153 ◽

2015 ◽

Vol 1109 ◽

pp. 153-157 ◽

Cited By ~ 1

Author(s):

A.K.M. Muaz ◽

U. Hashim ◽

Sharipah Nadzirah ◽

M. Wesam Al-Mufti ◽

Fatimah Ibrahim ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Heat Treatment ◽

Electrical Properties ◽

Sol Gel ◽

Schottky Contact ◽

Titanium Isopropoxide ◽

Precipitation Method ◽

Molar Ratio ◽

P Type

Titanium dioxide (TiO2) thin films were successfully prepared using the use of titanium isopropoxide as a precursor with an ethyl alcohol solution at a molar ratio 1.0:10 by sol-gel precipitation method at room temperature (~24°C). The gel solution was formed after mixed for different times. TiO2thin films were deposited on the P-type <100> silicon substrates by spin coating technique. In this paper, we report the comparison between conductivity and resistivity of TiO2thin films prepared at different heat treatment. The results show that the electrical properties of TiO2thin film were changed with the changes of heat treatment. The results exhibit that the resistance tends to decline as the annealing temperature increases. The most conductive sample is 700°C followed with 500°C, 300°C, 100°C and least conductive is as-deposited film. From the I-V curve, the graph giving a Schottky contact properties.

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p-type conduction in codoped ZnO thin films

Journal of Applied Physics ◽

10.1063/1.1527210 ◽

2003 ◽

Vol 93 (1) ◽

pp. 396-399 ◽

Cited By ~ 123

Author(s):

A. V. Singh ◽

R. M. Mehra ◽

A. Wakahara ◽

A. Yoshida

Keyword(s):

Thin Films ◽

Zno Thin Films ◽

P Type ◽

Type Conduction

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Characterization of amorphous p-type transparent CuFeO2 thin films prepared by radio frequency magnetron sputtering method at room temperature

Thin Solid Films ◽

10.1016/j.tsf.2015.04.066 ◽

2015 ◽

Vol 589 ◽

pp. 17-21 ◽

Cited By ~ 12

Author(s):

Zanhong Deng ◽

Xiaodong Fang ◽

Xi Wang ◽

Suzhen Wu ◽

Weiwei Dong ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Radio Frequency ◽

Room Temperature ◽

Radio Frequency Magnetron ◽

Radio Frequency Magnetron Sputtering ◽

P Type

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Evaluation of the Structures and Oxidation Resistances of MoSi2-Si Composite Thin Films

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.445.148 ◽

2010 ◽

Vol 445 ◽

pp. 148-151 ◽

Cited By ~ 3

Author(s):

Teppei Hayashi ◽

Yuuki Sato ◽

Shinzo Yoshikado

Keyword(s):

Thin Film ◽

Crystal Structure ◽

Thin Films ◽

Silicon Nitride ◽

Magnetron Sputtering ◽

Oxidation Resistance ◽

Hexagonal Phase ◽

Molar Ratio ◽

Radio Frequency Magnetron Sputtering ◽

Unknown Phase

Thin films of mixtures of molybdenum silicate (MoSi2) and silicon (Si) (MoSiX, where the Mo to Si molar ratio = 1:X) were deposited on silicon nitride (Si3N4) polycrystalline substrates by radio-frequency magnetron sputtering using a target made of a mixture of MoSi2 and Si powders. The crystal structure of MoSiX thin films deposited on the Si3N4 substrate consisted of a mixture of a hexagonal phase and an unknown phase when X > 2.05. A thin film consisting almost entirely of the unknown phase could be deposited when X = 2.1−2.15. Molybdenum silicate can exist in the forms Mo3Si, Mo5Si3, or MoSi2, but to date there has been no report of molybdenum silicate having a Si to Mo molar composition ratio of larger than 2. It was found that the surfaces of thin films of the hexagonal phase or the unknown phase were readily oxidized, whereas the surfaces of thin films of a mixture of the hexagonal phase and the unknown phase exhibit excellent oxidation resistance in air at temperatures up to 700 °C.

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