Electrical Properties of Nano-TiO2 Thin Film Prepared by Sol-Gel Precipitation Route Using Two-Point Probe Method

2015 ◽  
Vol 1109 ◽  
pp. 153-157 ◽  
Author(s):  
A.K.M. Muaz ◽  
U. Hashim ◽  
Sharipah Nadzirah ◽  
M. Wesam Al-Mufti ◽  
Fatimah Ibrahim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Heat Treatment ◽  
Electrical Properties ◽  
Sol Gel ◽  
Schottky Contact ◽  
Titanium Isopropoxide ◽  
Precipitation Method ◽  
Molar Ratio ◽  
P Type

Titanium dioxide (TiO2) thin films were successfully prepared using the use of titanium isopropoxide as a precursor with an ethyl alcohol solution at a molar ratio 1.0:10 by sol-gel precipitation method at room temperature (~24°C). The gel solution was formed after mixed for different times. TiO2thin films were deposited on the P-type <100> silicon substrates by spin coating technique. In this paper, we report the comparison between conductivity and resistivity of TiO2thin films prepared at different heat treatment. The results show that the electrical properties of TiO2thin film were changed with the changes of heat treatment. The results exhibit that the resistance tends to decline as the annealing temperature increases. The most conductive sample is 700°C followed with 500°C, 300°C, 100°C and least conductive is as-deposited film. From the I-V curve, the graph giving a Schottky contact properties.

Tunable electrical properties of NiO thin films and p-type thin-film transistors

2015 ◽  
Vol 592 ◽  
pp. 195-199 ◽  
Author(s):  
Yongyue Chen ◽  
Yajie Sun ◽  
Xusheng Dai ◽  
Bingpo Zhang ◽  
Zhenyu Ye ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Thin Film Transistors ◽  
P Type

Oxygen Sensitivity of SrFeO3-δ Thin Films Prepared by Sol-Gel Method

2007 ◽  
Vol 280-283 ◽  
pp. 315-318 ◽  
Author(s):  
Chong Liang ◽  
De An Yang ◽  
Jian Jing Song ◽  
Ming Xia Xu
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Sol Gel ◽  
Alumina Substrate ◽  
Oxygen Sensitivity ◽  
Coating Film ◽  
Partial Pressures ◽  
P Type ◽  
Type Conduction

Sr(NO3)2, Fe(NO3)3 and citric acid (the mole ratio was 1:1:2) were mixed in water to form sol. Alumina substrate, which had been treated by ultrasonic cleaner, were dipped in the sol and pulled out, and the coating film was heated for 1h at 900oC. Through seventeen times treatment, SrFeO3-d thin film was coated on the alumina substrate. The remainder sol was dried and heated at 400oC, 800oC, 900oC for 2 h. The thin films and the powders were characterized by XRD. The morphologies of thin films were observed by SEM. The results showed that SrFeO3-δ was formed at 900oC on alumina substrate and the grain size was 100 ~ 200 nm. The oxygen sensitivity was measured in the temperature range of 377 ~ 577oC under different oxygen partial pressures. SrFeO3-δ thin film showed p-type conduction. The response time was less than 2 min when being exposed to a change from N2 to 0.466% O2 at 377oC.

Enhanced Electrical properties in Mn-doped Bi3.25La0.75Ti3O12 thin films

2005 ◽  
Vol 902 ◽  
Author(s):  
Sushil Kumar Singh ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Electrical Properties ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Switching Field ◽  
Mn Doping ◽  
Mn Doped

AbstractMn-doped Bi3.25La0.75Ti3O12 (BLT) thin films were fabricated by depositing sol-gel solutions on Pt/Ti/SiO2/Si <100> substrates. The surface morphology and ferroelectric properties of Mn-doped BLT films depend upon the orientation of the films. Small amount of Mn-doping in BLT films influences the ferroelectric properties of the films, that is, it enhances the remanent polarization and reduces the coercive field. The 1% Mn-doped BLT films show enhanced remanent polarization and reduced the coercive field by about 22%. To the contrary, Mn-doping more than 1% decreases polarization gradually. Mn-doping significantly improves the fatigue resistance of BLT films. The reduced polarization in the 3.3% Mn-doped thin film recovers during switching cycles higher than 5 × 105. Under high switching field, the probability of field-assisted unpinning of domains is expected to be high and this may be the main cause for increase in polarization after 5 × 105 in the 3.3% Mn-doped BLT film.

Synthesis Photocatalytic TiO2/ZnO Nanocomposite and Investigation through Anatase, Wurtzite and ZnTiO3 Phases Antibacterial Behaviors

2018 ◽  
Vol 51 ◽  
pp. 69-77 ◽  
Author(s):  
Hanif Mohammadi ◽  
Mohammad Ghorbani
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Antibacterial Activity ◽  
Uv Light ◽  
Sol Gel ◽  
Molar Ratio ◽  
Plate Count ◽  
Gel Method ◽  
Sol Gel Method ◽  
E Coli

Titanium dioxide is prepared by sol gel method from titanium tetraisopropoxide (TTIP) as precursor and likewise zinc oxide is prepared by sol gel method from zinc acetate dehydrate (ZAD) as precursor. The composite sols are prepared in three different molar ratios 90TiO2:10ZnO, 70TiO2:30ZnO and 50TiO2:50ZnO. Thin film deposition is carried out by dip coating technique. Crystal structure, surface morphology and photocatalytic activity of the prepared nanocomposite thin films are investigated. The antibacterial activity of the prepared nanocomposite thin film against E-coli ATCC 25922 bacteria is examined by placing the thin film in standard aqueous E-coli medium under UV light for 1, 2, 3 and 4 hours and then counting the bacteria with Standard Plate Count Agar (SPC) technique. The prepared thin films have shown strong antibacterial activity in the presence of UV light and by increasing the ZnO molar ratio from 10 to 50, antibacterial activity of the thin films decreases because of decreases in the anatase phase of the TiO2. In the dark conditions by increasing the molar ratio of ZnO, the antibacterial activity of the thin films increases and this phenomenon is related to increasing the zinc ions in the thin films.

Composition-dependent structural and electrical properties of p-type SnOx thin films prepared by reactive DC magnetron sputtering: effects of oxygen pressure and heat treatment

RSC Advances ◽  
2016 ◽  
Vol 6 (75) ◽  
pp. 71757-71766 ◽  
Author(s):  
Sang Jin Han ◽  
Sungmin Kim ◽  
Joongyu Ahn ◽  
Jae Kyeong Jeong ◽  
Hoichang Yang ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Dc Magnetron Sputtering ◽  
Post Heat Treatment ◽  
Dc Sputtering ◽  
Partial Pressures ◽  
Structural And Electrical Properties ◽  
P Type

The composition-dependent structural and electrical properties of p-type SnOx films prepared by reactive DC sputtering at various oxygen partial pressures (PO) and post-heat treatment temperatures (TA) were investigated.

Synthesis of ZnO Thin Film on Porous Silicon by Spin Coating in Various Low Molarities Precursor

2013 ◽  
Vol 701 ◽  
pp. 167-171 ◽  
Author(s):  
Kevin Alvin Eswar ◽  
Azlinda Ab Azlinda ◽  
F.S. Husairi ◽  
M. Rusop ◽  
Saifollah Abdullah
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Roughness ◽  
Porous Silicon ◽  
Spin Coating ◽  
Substrate Surface ◽  
Sol Gel ◽  
Zno Thin Films ◽  
Coating Method ◽  
P Type

Zinc acetate dehydrate as starting material along with diethanolamine as stabilizer, and isopropyl as a solvent were used to synthesis ZnO thin films in different low molarities. Sol-gel spin coating method was used in depositing ZnO on porous silicon substrate surface. In other to prepare substrate, p-type silicon wafer was etched by dilute hydrofluoric acid to modify the surface becomes porous. Field Emission Scanning Electron Microscopy (FESEM) was employed to study the surface morphology. It is found that ZnO thin films were successfully deposited on the substrates which are composed of ZnO nanoparticles with size ~16 nm to ~22nm. Atomic Force Microscopy (AFM) was used to investigate the surface roughness of thin film. The result shows that the surface roughness is increase as the increases of molarities. Photoluminescence (PL) spectra were done in range of 350 nm to 800 nm. The result shows peaks belonging to ZnO, ZnO defects, and porous silicon respectively are appeared.

Preferential orientation and dielectric/pyroelectric properties of sol-gel-derived Pb(Mg, Zn)1/3Nb2/3O3 thin films

1995 ◽  
Vol 10 (10) ◽  
pp. 2631-2641 ◽  
Author(s):  
Mun K. Cho ◽  
K.S. Kim ◽  
Hyun M. Jang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Film Formation ◽  
Sol Gel ◽  
Water Concentration ◽  
Isothermal Transformation ◽  
Pyroelectric Coefficient ◽  
Preferential Orientation ◽  
Molar Ratio ◽  
Diffusion Controlled

Thin films of Pb(Mg,Zn)1/3Nb2/3O3 (PMZN) were fabricated by spin casting the partially hydrolyzed Pb-Mg-Zn-Nb-O complex alkoxide sols on (111) Pt-coated MgO(100) planes. Analysis of the isothermal transformation data indicated that the growth of perovskite grains from the pyrochlore matrix is a diffusion-controlled process with an initial fast nucleation. The effect of water concentration in the sol on the preferential orientation of perovskite grains in the corresponding thin film was examined. A strong preferential orientation of (100) perovskite was obtained in the PMZN thin film derived from the sol having a molar ratio of H2O to total metal alkoxides (Rw) of 2. A small-angle x-ray scattering (SAXS) experiment in the Porod region indicated that weakly branched precursor systems led to highly (100)-oriented perovskite grains after thin-film formation. The pyroelectric coefficient and the corresponding figure-of-merit were controlled by suitably varying the degree of preferential orientation during the fabrication of thin films.

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