Relation between Electro-Optic Effect and Dielectric Permittivity of Ba0.5Sr0.5TiO3 Thin Films

The relation between the dielectric tunability and the electro-optic (EO) effect of barium strontium titanate (Ba0.5Sr0.5TiO3) thin film was discussed. The tunability of dielectric permittivity calculated from the complex admittance with planer electrodes reached to 53.1%, and the tunability of birefringence by EO effect was 0.6%. The birefringence change from EO effect was much lower than the tunability of dielectric permittivity. The materials with high tunability do not always exhibit high EO effect. This is concluded to arise due to the ionic mass in the EO materials.

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High tunability barium strontium titanate thin films for rf circuit applications

Applied Physics Letters ◽

10.1063/1.1818724 ◽

2004 ◽

Vol 85 (19) ◽

pp. 4451 ◽

Cited By ~ 94

Author(s):

N. K. Pervez ◽

P. J. Hansen ◽

R. A. York

Keyword(s):

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

High Tunability ◽

Barium Strontium ◽

Rf Circuit

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Radio Frequency (RF) Magnetron Sputtered Barium Strontium Titanate (BST) Thin Film

Key Engineering Materials ◽

10.4028/www.scientific.net/kem.727.942 ◽

2017 ◽

Vol 727 ◽

pp. 942-946 ◽

Cited By ~ 2

Author(s):

Juan Li ◽

Cong Chun Zhang ◽

Yan Lei Wang ◽

Yang Gao ◽

Xiao Lin Zhao

Keyword(s):

Thin Film ◽

Thin Films ◽

Dielectric Properties ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Perovskite Phase ◽

Rf Magnetron Sputtering ◽

Barium Strontium ◽

Metal Insulator Metal ◽

Bst Thin Film

Barium strontium titanate (BST) thin films with excellent dielectric properties are deposited by on-axis RF magnetron sputtering system. The effects of composition of the target and oxygen partial pressure on the microstructure of BST thin film have been investigated. The dielectric properties of the thin films are investigated. The results show that composition of BST thin film deposited with pure argon ambient by the target with 30atm% excess of Ba and Sr is stoichiometric. Perovskite phase can be observed in the thin film annealed in oxygen at 750 °C for 30 min. A metal-insulator-metal (MIM) capacitor is fabricated by microfabrication technique. The capacitance value at 2 GHz is 0.417 pF and 1.42 pF for 50 nm and 90 nm BST thin film respectively, and the leakage current density is 6×10-6 A/cm2 and 5.35×10-8 A/cm2 respectively.

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Study of the Layer-Type BST Thin Film with X-ray Diffraction and X-ray Photoelectron Spectroscopy

Materials ◽

10.3390/ma15020578 ◽

2022 ◽

Vol 15 (2) ◽

pp. 578

Author(s):

Agata Lisińska-Czekaj ◽

Dionizy Czekaj

Keyword(s):

Thin Film ◽

Thin Films ◽

Strontium Titanate ◽

Barium Strontium Titanate ◽

Photoelectron Spectroscopy ◽

Chemical Compositions ◽

X Ray Diffraction ◽

X Ray ◽

Barium Strontium ◽

Bst Thin Film

In the present paper, results of X-ray photoelectron studies of electroceramic thin films of barium strontium titanate, Ba1−xSrxTiO3 (BST), composition deposited on stainless-steel substrates are presented. The thin films were prepared by the sol-gel method. A spin-coating deposition of BST layers with different chemical compositions was utilized so the layer-type structure of (0-2) connectivity was formed. After the deposition, the thin-film samples were heated in air atmosphere at temperature T = 700 °C for 1 h. The surfaces of BST thin films subjected to thermal treatment were studied by X-ray diffraction. X-ray diffraction measurements confirmed the perovskite-type phase for all grown thin-film samples. The oxidation states of the elements were examined by the X-ray photoelectron spectroscopy method. X-ray photoelectron spectroscopy survey spectra as well as high-resolution spectra (photo-peaks) of the main metallic elements, such as Ti, Ba, and Sr, were compared for the layer-type structures, differing in the deposition sequence of the barium strontium titanate layers constituting the BST thin film.

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