Nanoindentation-Induced Phase Transformation in Silicon Thin Films

2013 ◽  
Vol 586 ◽  
pp. 112-115 ◽  
Author(s):  
Radim Ctvrtlik ◽  
Jan Tomastik ◽  
Vaclav Ranc
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
High Pressure ◽  
Phase Transformation ◽  
Raman Spectra ◽  
Structural Changes ◽  
Berkovich Indenter ◽  
Silicon Thin Films ◽  
Free Silicon ◽  
Amorphous Si

Nanoindentation-induced phase transformation of amorphous, annealed amorphous and microcrystalline hydrogen-free silicon thin films were studied. Series of nanoindentation experiments were performed with a sharp Berkovich indenter at various unloading rates. The structural changes in indentation deformed regions were examined using Raman spectroscopy. Analyses of indentation curves and Raman spectra suggest that high pressure phases appear more easily in annealed amorphous Si thin films than in microcrystalline ones.

scholarly journals Structural Changes in Doped Ge2Sb2Te5 Thin Films Studied by Raman Spectroscopy

2013 ◽  
Vol 44 ◽  
pp. 82-90 ◽  
Author(s):  
S. Kozyukhin ◽  
M. Veres ◽  
H.P. Nguyen ◽  
A. Ingram ◽  
V. Kudoyarova
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Structural Changes

Enhanced crystallization and phase transformation of amorphous silicon nitride under high pressure

2001 ◽  
Vol 16 (1) ◽  
pp. 67-75 ◽  
Author(s):  
Ya-Li Li ◽  
Yong Liang ◽  
Fen Zheng ◽  
Xian-Feng Ma ◽  
Suo-Jing Cui ◽  
...  
Keyword(s):  
High Pressure ◽  
Phase Transformation ◽  
Silicon Nitride ◽  
Amorphous Silicon ◽  
Crystallization Temperature ◽  
Amorphous Materials ◽  
Normal Pressure ◽  
Nucleation And Growth ◽  
Amorphous Silicon Nitride ◽  
Amorphous Si

The crystallization and phase transformation of amorphous Si3N4 ceramics under high pressure (1.0–5.0 GPa) between 800 and 1700 °C were investigated. A greatly enhanced crystallization and α–β transformation of the amorphous Si3N4 ceramics were evident under the high pressure, as characterized by that, at 5.0 GPa, the amorphous Si3N4 began to crystallize at a temperature as low as 1000 °C (to transform to a modification). The subsequent a–b transformation occurred completed between 1350 and 1420 °C after only 20 min of pressing at 5.0 GPa. In contrast, under 0.1 MPa N2, the identical amorphous materials were stable up to 1400 °C without detectable crystallization, and only a small amount of a phase was detected at 1500 °C. The crystallization temperature and the a–b transformation temperatures are reduced by 200–350 °C compared to that at normal pressure. The enhanced phase transformations of the amorphous Si3N4 were discussed on the basis of thermodynamic and kinetic consideration of the effects of pressure on nucleation and growth.

Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H2O Vapor

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4254-4257 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Mitsuru Satoh ◽  
Keiji Sakamoto ◽  
Kentaro Ozaki ◽  
Keiko Saitoh
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
High Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Laser Induced Oxidation Effects in Bismuth Thin Films

2012 ◽  
Vol 1477 ◽  
Author(s):  
Marco A. Zepeda ◽  
Michel Picquart ◽  
Emmanuel Haro-Poniatowski
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Laser Irradiation ◽  
Raman Spectra ◽  
Exposure Time ◽  
Oxidation Process ◽  
Energy Dispersion Spectroscopy ◽  
Irradiation Power ◽  
Pure Bismuth ◽  
532 Nm

ABSTRACTThe Laser induced oxidation process of bismuth was investigated using Raman spectroscopy. Upon laser irradiation (λ = 532 nm) pure Bismuth was transformed gradually into Bi2O3. Raman spectra of the samples showed the characteristics peaks for pure Bi located at 71 cm-1 and 96 cm-1. The oxidation process was monitored by Raman spectra with four additional bands located at about 127 cm-1, 241 cm-1, 313 cm-1 and 455 cm-1. Maintaining constant the exposure time of irradiation, the intensity of these bands depended on laser irradiation power. The presence of Bi2O3 in the sample was confirmed through by energy dispersion spectroscopy (EDS).

scholarly journals Formation of irregular rings in silica aerogel structure during the sintering process

2003 ◽  
Vol 35 (2) ◽  
pp. 67-73
Author(s):  
Ivana Hinic ◽  
Goran Stanisic ◽  
Zoran Popovic
Keyword(s):  
Raman Spectroscopy ◽  
Bulk Density ◽  
Raman Spectra ◽  
Silica Aerogel ◽  
Structural Changes ◽  
Low Density ◽  
Sintering Process ◽  
Time Intervals ◽  
Defect Modes

Samples of low-density, highly disordered silica aerogel with initial bulk density of 0.16 g/cm3, were sintered isothermally in different time intervals at 1000?C. Structural changes during the sintering process have been investigated by Raman spectroscopy. Defect modes of irregular three and four membered rings were observed in the Raman spectra of sintered samples.

Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor

2001 ◽  
Vol 65 (1-4) ◽  
pp. 577-583 ◽  
Author(s):  
T Sameshima ◽  
K Sakamoto ◽  
K Asada ◽  
M Kondo ◽  
A Matsuda ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
High Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Characterization of Defects in Polycrystalline Silicon Thin Films Using Chemical Etching, Hydrogenation, and Raman Spectroscopy

2008 ◽  
Vol 47 (1) ◽  
pp. 54-58 ◽  
Author(s):  
Kuninori Kitahara ◽  
Hiroya Ogasawara ◽  
Junji Kambara ◽  
Mitsunori Kobata ◽  
Yasutaka Ohashi
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Chemical Etching ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films
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