Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with High-Pressure H2O Vapor

1998 ◽  
Vol 37 (Part 1, No. 8) ◽  
pp. 4254-4257 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Mitsuru Satoh ◽  
Keiji Sakamoto ◽  
Kentaro Ozaki ◽  
Keiko Saitoh
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
High Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Reduction of defects of polycrystalline silicon thin films by heat treatment with high-pressure H2O vapor

2001 ◽  
Vol 65 (1-4) ◽  
pp. 577-583 ◽  
Author(s):  
T Sameshima ◽  
K Sakamoto ◽  
K Asada ◽  
M Kondo ◽  
A Matsuda ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
High Pressure ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Defect Reduction in Polycrystalline Silicon Thin Films by Heat Treatment with High-Pressure H2O Vapor

2007 ◽  
Vol 46 (3B) ◽  
pp. 1286-1289 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Hiromi Hayasaka ◽  
Masato Maki ◽  
Atsushi Masuda ◽  
Takuya Matsui ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
High Pressure ◽  
Polycrystalline Silicon ◽  
Defect Reduction ◽  
Silicon Thin Films

Heat Treatment of Amorphous and Polycrystalline Silicon Thin Films with H2O Vapor

1998 ◽  
Vol 37 (Part 2, No. 2A) ◽  
pp. L112-L114 ◽  
Author(s):  
Toshiyuki Sameshima ◽  
Mitsuru Satoh ◽  
Keiji Sakamoto ◽  
Ai Hisamatsu ◽  
Kentaro Ozaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Silicon Thin Films

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon

Dopant Segregation and Heat Treatment Effects on the Electrical Properties of Polycrystalline Silicon thin Films

Silicon ◽  
2015 ◽  
Vol 8 (4) ◽  
pp. 513-516 ◽  
Author(s):  
B. Zaidi ◽  
B. Hadjoudja ◽  
C. Shekhar ◽  
B. Chouial ◽  
R. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Electrical Properties ◽  
Polycrystalline Silicon ◽  
Treatment Effects ◽  
Dopant Segregation ◽  
Silicon Thin Films

Study of Nitrogen Effect on the Boron Diffusion during Heat Treatment in Polycrystalline Silicon/Nitrogen-Doped Silicon Thin Films

2011 ◽  
Vol 50 (5R) ◽  
pp. 051301 ◽  
Author(s):  
Lynda Saci ◽  
Ramdane Mahamdi ◽  
Farida Mansour ◽  
Jonathan Boucher ◽  
Maéva Collet ◽  
...  
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Polycrystalline Silicon ◽  
Boron Diffusion ◽  
Nitrogen Doped ◽  
Silicon Thin Films ◽  
Nitrogen Effect ◽  
Doped Silicon

The Precipitation of Si in AlCuSi Thin Films

1973 ◽  
Vol 31 ◽  
pp. 34-35 ◽  
Author(s):  
R. M. Anderson
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Heat Treatment ◽  
Solid Solution ◽  
Integrated Circuit ◽  
Copper Film ◽  
Solution Concentration ◽  
X Ray ◽  
Silicon Thin Films ◽  
Before And After

Aluminum-copper-silicon thin films have been considered as an interconnection metallurgy for integrated circuit applications. Various schemes have been proposed to incorporate small percent-ages of silicon into films that typically contain two to five percent copper. We undertook a study of the total effect of silicon on the aluminum copper film as revealed by transmission electron microscopy, scanning electron microscopy, x-ray diffraction and ion microprobe techniques as a function of the various deposition methods.X-ray investigations noted a change in solid solution concentration as a function of Si content before and after heat-treatment. The amount of solid solution in the Al increased with heat-treatment for films with ≥2% silicon and decreased for films <2% silicon.

Crystallization of Amorphous Silicon Thin Films by Microwave Heating

2014 ◽  
Vol 1666 ◽  
Author(s):  
Tomohiko Nakamura ◽  
Shinya Yoshidomi ◽  
Masahiko Hasumi ◽  
Toshiyuki Sameshima ◽  
Tomohisa Mizuno
Keyword(s):  
Thin Films ◽  
Heat Treatment ◽  
Amorphous Silicon ◽  
Microwave Heating ◽  
Volume Ratio ◽  
Heated Sample ◽  
Silicon Thin Films ◽  
Scattering Spectra ◽  
Raman Scattering Spectra ◽  
Si Films

ABSTRACTWe report crystallization of amorphous silicon (a-Si) thin films and improvement of thin film transistors (TFTs) characteristics using 2.45 GHz microwave heating assisted with carbon powders. Undoped 50-nm-thick a-Si films were formed on quartz substrates and heated by microwave irradiation for 2, 3, and 4 min. Raman scattering spectra revealed that the crystalline volume ratio increased to 0.42 for the 4-min heated sample. The dark and photo electrical conductivities measured by Air mass 1.5 at 100 mW/cm2 were 2.6x10-6 and 5.2x10-6 S/cm in the case of 4-min microwave heating followed by 1.3x106-Pa-H2O vapor heat treatment at 260°C for 3 h. N channel polycrystalline silicon TFTs characteristics were improved by the combination of microwave heating with high-pressure H2O vapor heat treatment. The threshold voltage decreased from 5.3 to 4.2 V and the effective carrier mobility increased from 18 to 25 cm2/Vs.

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