The Effect of γ-Ray Irradiation on Optical Properties of Single Photon Sources in 4H-SiC MOSFET

2020 ◽  
Vol 1004 ◽  
pp. 361-366
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinsuke Harada ◽  
Yuichi Yamazaki ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Hydrogen Atoms ◽  
Oxide Semiconductors ◽  
Interface Defects ◽  
Mobile Hydrogen ◽  
Photon Sources ◽  
Γ Ray

We investigated the effects of γ-ray irradiation to single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductors field-effect transistors (MOSFETs). After the γ-ray irradiation, the number of SPSs was temporarily increased. However, the ratio of unstable SPSs was increased with increasing the radiation dose, and such unstable ones gradually disappeared. Finally, the density of the SPSs nearly recovered that before the irradiation. We discuss a possible explanation on these phenomena in terms of interactions between mobile hydrogen atoms and interface defects.

scholarly journals Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

2018 ◽  
Vol 112 (3) ◽  
pp. 031105 ◽  
Author(s):  
Y. Abe ◽  
T. Umeda ◽  
M. Okamoto ◽  
R. Kosugi ◽  
S. Harada ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Photon Sources

Microscopic Difference between Dry and Wet Oxidations of C-Face 4H-SiC MOSFFETs Studied by Electrically Detected Magnetic Resonance

2016 ◽  
Vol 858 ◽  
pp. 619-622
Author(s):  
Yohei Kagoyama ◽  
Mitsuo Okamoto ◽  
Shinsuke Harada ◽  
Ryo Arai ◽  
Takahide Umeda
Keyword(s):  
Magnetic Resonance ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Wet Oxidation ◽  
Hydrogen Atoms ◽  
Interface Defects ◽  
Dry Oxidation ◽  
Electrically Detected Magnetic Resonance

We studied interface defects of C-face 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of electrically-detected-magnetic-resonance (EDMR) spectroscopy. EDMR measurements were carried out on opposite types of C-face MOSFETs, which were prepared by dry oxidation and wet oxidation, and we found EDMR signals of interface defects from both the MOSFETs. Judging from their spectroscopic features, the interface signals of the two MOSFETs are assigned to be the same type, and we call them “C-face defects.” The density of C-face defects was found to be larger in the dry-oxide MOSFETs than in the wet-oxide MOSFETs. It is also revealed that part of C-face defects in wet-oxide MOSFETs are coupled with hydrogen atoms.

scholarly journals Contact spacing controls the on-current for all-carbon field effect transistors

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
Ali Deniz Özdemir ◽  
Pramit Barua ◽  
Felix Pyatkov ◽  
Frank Hennrich ◽  
Yuan Chen ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Transport Model ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Great Promise ◽  
Single Photon Emitters ◽  
Gate Control ◽  
Valence Bands ◽  
Combine Carbon

AbstractAll-carbon field-effect transistors, which combine carbon nanotubes and graphene hold great promise for many applications such as digital logic devices and single-photon emitters. However, the understanding of the physical properties of carbon nanotube (CNT)/graphene hybrid systems in such devices remained limited. In this combined experimental and theoretical study, we use a quantum transport model for field-effect transistors based on graphene electrodes and CNT channels to explain the experimentally observed low on currents. We find that large graphene/CNT spacing and short contact lengths limit the device performance. We have also elucidated in this work the experimentally observed ambipolar transport behavior caused by the flat conduction- and valence-bands and describe non-ideal gate-control of the contacts and channel region by the quantum capacitance of graphene and the carbon nanotube. We hope that our insights will accelerate the design of efficient all-carbon field-effect transistors.

scholarly journals Electrical and optical properties of single As-doped ZnO nanowire field effect transistors

2009 ◽  
Vol 58 (6) ◽  
pp. 4156
Author(s):  
Zhang Jun-Yan ◽  
Deng Tian-Song ◽  
Shen Xin ◽  
Zhu Kong-Tao ◽  
Zhang Qi-Feng ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Zno Nanowire ◽  
Electrical And Optical Properties ◽  
Doped Zno

Oxidation-Process Dependence of Single Photon Sources Embedded in 4H-SiC MOSFETs

2018 ◽  
Vol 924 ◽  
pp. 281-284 ◽  
Author(s):  
Yuta Abe ◽  
Takahide Umeda ◽  
Mitsuo Okamoto ◽  
Shinobu Onoda ◽  
Moriyoshi Haruyama ◽  
...  
Keyword(s):  
Room Temperature ◽  
Oxidation Process ◽  
Field Effect Transistors ◽  
Single Photon ◽  
Metal Oxide Semiconductor ◽  
Nitrogen Vacancy ◽  
Oxide Semiconductor ◽  
Nitrogen Vacancy Center ◽  
Photon Sources ◽  
Vacancy Center

We investigated single photon sources (SPSs) in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) by means of confocal microscope techniques. We found SPSsonlyin 4H-SiC/SiO2interface regions of wet-oxide C-face MOSFETs. The other regions of MOSFETs such as source, drain and well did not exhibit SPSs. The luminescent intensity of the SPSs at room temperature was at least twice larger than that of the most famous SPSs, the nitrogen-vacancy center, in diamond. We examined four types of C-face and Si-face 4H-SiC MOSFETs with different oxidation processes, and found that the formation of the SPSs strongly depended on the preparation of SiC/SiO2interfaces.

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