Low-Resistance Ohmic Contact Formation by Laser Annealing of N-Implanted 4H-SiC

2020 ◽  
Vol 1004 ◽  
pp. 718-724
Author(s):  
Carsten Hellinger ◽  
Oleg Rusch ◽  
Mathias Rommel ◽  
Anton J. Bauer ◽  
Tobias Erlbacher
Keyword(s):  
Crystal Structure ◽  
Pulse Duration ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Voltage Drop ◽  
Pulsed Laser ◽  
Electrical Measurements ◽  
Low Resistance ◽  
Contact Formation ◽  
Ohmic Contact Formation

In this work, pulsed-laser-based tempering was applied for post-implant annealing of n-type N-doped 4H-SiC in order to electrically activate the dopants and to rebuild the crystal structure. The annealing was performed by a frequency-tripled Nd:YVO4 laser with a pulse duration of 60 ns. To evaluate the effects of post-implant annealing, JBS diodes were electrically characterized. The results were compared with implanted, not post-annealed JBS diodes. The electrical measurements showed a significant on-state voltage drop of 40 mV at 6 A for post-implant laser annealed diodes compared to not post-implant annealed diodes.

Ohmic contact formation on InP by pulsed laser photochemical doping

1980 ◽  
Vol 36 (10) ◽  
pp. 847-849 ◽  
Author(s):  
T. F. Deutsch ◽  
D. J. Ehrlich ◽  
R. M. Osgood ◽  
Z. L. Liau
Keyword(s):  
Ohmic Contact ◽  
Pulsed Laser ◽  
Contact Formation ◽  
Ohmic Contact Formation

Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC

2014 ◽  
Vol 778-780 ◽  
pp. 689-692 ◽  
Author(s):  
Milantha de Silva ◽  
Tadashi Sato ◽  
Shinichiro Kuroki ◽  
Takamaro Kikkawa
Keyword(s):  
Contact Resistance ◽  
Ohmic Contact ◽  
Bottom Electrode ◽  
Nickel Silicide ◽  
Line Pattern ◽  
Low Resistance ◽  
Contact Formation ◽  
Ohmic Contact Formation ◽  
Ion Implanted

In this work, a partial amorphization is introduced to form a Nickel silicide ohmic contact for 4H-SiC bottom electrode. In a conventional Nickel silicide electrode, a carbon agglomeration at the silicide/SiC interface has been occured, and contant resistance between Ni silicide and SiC substrate became larger. For the reduction of the contact resistance, the partial amorphization of surface of SiC substrate was introduced. By this partial amorphization, the space position of the carbon agglomeration is controlled, and contact resistance can be reduced. As a result, with an amorphous 100 nm line pattern, a reliable contact resistance of 1.9×10-3Ωcm2was realized.

Laser Annealing Simulations of Metallisations Deposited on 4H-SiC

2019 ◽  
Vol 963 ◽  
pp. 502-505
Author(s):  
Clement Berger ◽  
Jean François Michaud ◽  
David Chouteau ◽  
Daniel Alquier
Keyword(s):  
Finite Elements ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Laser Annealing ◽  
Finite Elements Method ◽  
Contact Formation ◽  
Thermal Simulations ◽  
Ohmic Contact Formation

Based on finite elements method, thermal simulations were conducted to reproduce a laser annealing of several common metals deposited on 4H-SiC. We estimated the temperature reached at the metal/4H-SiC interface to check the possibility to achieve ohmic contact formation through laser annealing. An optimization of Al/Ti/4H-SiC stacking was also considered. Simulations highlighted the low temperature of the non-irradiated SiC face that allows using grinded wafer.

Nonalloyed ohmic contact formation in Ti/Al contacts to n-type AlGaN

2008 ◽  
Vol 41 (17) ◽  
pp. 175105
Author(s):  
Yow-Jon Lin ◽  
Feng-Tso Chien ◽  
Ching-Ting Lee ◽  
Chi-Shin Lin ◽  
Yang-Chun Liu
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Al-nGaAs ohmic contact formation by H2SeO3 treatment and annealing

2001 ◽  
Author(s):  
Sarunas Meskinis ◽  
Kestutis Slapikas ◽  
R. Gudaitis
Keyword(s):  
Ohmic Contact ◽  
Contact Formation ◽  
Ohmic Contact Formation

Ohmic Contact Formation on Silicon-doped Gallium Nitride Epilayers by Low Temperature Annealing

2000 ◽  
Vol 338-342 ◽  
pp. 1619-1619
Author(s):  
L.S. Tan ◽  
A. Raman ◽  
K.M. Ng ◽  
S.J. Chua ◽  
A.T.S. Wee ◽  
...  
Keyword(s):  
Gallium Nitride ◽  
Low Temperature ◽  
Ohmic Contact ◽  
Science And Technology ◽  
Contact Formation ◽  
Low Temperature Annealing ◽  
Silicon Doped ◽  
Ohmic Contact Formation ◽  
Double Publication

“removed due to double publication”. The original paper: Journal: Semiconductor Science and Technology Create an alertIssue Volume 15, Number 6 Citation: L S Tan et al 2000 Semicond. Sci. Technol. 15 585 doi: 10.1088/0268-1242/15/6/317 can be accesses at IOP: http://iopscience.iop.org/0268-1242/15/6/317

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