High Purity and Semi-Insulating 4H-SiC Crystals Grown by Physical Vapor Transport

1998 ◽  
Vol 264-268 ◽  
pp. 9-12 ◽  
Author(s):  
G. Augustine ◽  
H. McD. Hobgood ◽  
Vijay Balakrishna ◽  
Greg Dunne ◽  
R.H. Hopkins ◽  
...  
Keyword(s):  
High Purity ◽  
Vapor Transport ◽  
Physical Vapor Transport

Highly pure pentacene crystals grown by physical vapor transport: the critical role of the carrier gas

2021 ◽  
Author(s):  
Hye Soo Kim ◽  
Soyoung Kim ◽  
Jin Young Koo ◽  
Hee Cheul Choi
Keyword(s):  
Physical Properties ◽  
High Purity ◽  
Transport Process ◽  
Critical Role ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Carrier Gas ◽  
Efficient Approach ◽  
Carrier Gases

An efficient approach to obtaining high purity pentacene crystals via physical vapor transport process is reported, utilizing the physical properties of carrier gases.

Knoop Hardness on the (0001) Plane of 4H and 6H SiC Single Crystals Fabricated by Physical Vapor Transport

2014 ◽  
Author(s):  
Jeffrey J. Swab ◽  
James W. McCauley ◽  
Brady Butler ◽  
Daniel Snoha ◽  
Donovan Harris ◽  
...  
Keyword(s):  
Single Crystals ◽  
Knoop Hardness ◽  
Vapor Transport ◽  
Physical Vapor Transport

High thermal conductivity of pure dense SiC ceramics prepared via HTPVT

2019 ◽  
Vol 12 (03) ◽  
pp. 1950032 ◽  
Author(s):  
Yuchen Deng ◽  
Yaming Zhang ◽  
Nanlong Zhang ◽  
Qiang Zhi ◽  
Bo Wang ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Silicon Carbide ◽  
Grain Size ◽  
Phase Composition ◽  
Room Temperature ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Growth Substrate ◽  
Sic Ceramics ◽  
Evolution Of Microstructure

Pure dense silicon carbide (SiC) ceramics were obtained via the high-temperature physical vapor transport (HTPVT) method using graphite paper as the growth substrate. The phase composition, the evolution of microstructure, the thermal diffusivity and thermal conductivity at RT to 200∘C were investigated. The obtained samples had a relative density of higher than 98.7% and a large grain size of 1[Formula: see text]mm, the samples also had a room-temperature thermal conductivity of [Formula: see text] and with the temperature increased to 200∘C, the thermal conductivity still maintained at [Formula: see text].

Analysis of Graphitization during Physical Vapor Transport Growth of Silicon Carbide

2004 ◽  
Vol 457-460 ◽  
pp. 55-58 ◽  
Author(s):  
Peter J. Wellmann ◽  
Z.G. Herro ◽  
Sakwe Aloysius Sakwe ◽  
Pierre M. Masri ◽  
M.V. Bogdanov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Vapor Transport ◽  
Physical Vapor Transport

Investigation of heavily nitrogen-doped n+ 4H–SiC crystals grown by physical vapor transport

2009 ◽  
Vol 311 (6) ◽  
pp. 1475-1481 ◽  
Author(s):  
Noboru Ohtani ◽  
Masakazu Katsuno ◽  
Masashi Nakabayashi ◽  
Tatsuo Fujimoto ◽  
Hiroshi Tsuge ◽  
...  
Keyword(s):  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Nitrogen Doped

Parameters of substrates–single crystals of ZnTe and Cd1−xZnxTe (x<0.25), obtained by physical vapor transport technique (PVT)

1999 ◽  
Vol 197 (3) ◽  
pp. 423-426 ◽  
Author(s):  
A Mycielski ◽  
A Szadkowski ◽  
E Łusakowska ◽  
L Kowalczyk ◽  
J Domagała ◽  
...  
Keyword(s):  
Single Crystals ◽  
Vapor Transport ◽  
Physical Vapor Transport ◽  
Transport Technique
Sign in / Sign up

Export Citation Format

Share Document