Vacancy Defects in As-Polished and in High-Fluence H+-Implanted 6H-SiC Detected by Slow Positron Annihilation Spectroscopy

2002 ◽  
Vol 389-393 ◽  
pp. 493-496 ◽  
Author(s):  
Marie France Barthe ◽  
P. Desgardin ◽  
L. Henry ◽  
C. Corbel ◽  
D.T. Britton ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
High Fluence ◽  
Slow Positron ◽  
Vacancy Defects

scholarly journals Native vacancy defects in Zn1−x(Mn,Co)xGeAs2 studied with positron annihilation spectroscopy

2009 ◽  
Vol 106 (1) ◽  
pp. 013524 ◽  
Author(s):  
L. Kilanski ◽  
A. Zubiaga ◽  
F. Tuomisto ◽  
W. Dobrowolski ◽  
V. Domukhovski ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Vacancy Defects

Study of the photodegradation of epoxy polymers with slow positron annihilation spectroscopy

2004 ◽  
Vol 42 (13) ◽  
pp. 2441-2459 ◽  
Author(s):  
R. Zhang ◽  
X. Gu ◽  
H. Chen ◽  
J. Zhang ◽  
Y. Li ◽  
...  
Keyword(s):  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron ◽  
Epoxy Polymers

A comparative study of defects in LiF implanted with 100 KeV Al+, Mg+and Ar+by slow Positron Annihilation Spectroscopy

2001 ◽  
Vol 155 (1-4) ◽  
pp. 139-144 ◽  
Author(s):  
E. J. Sendezera ◽  
A. T. Davidson ◽  
A. G. Kozakiewicz ◽  
W. Anwand ◽  
G. Brauer ◽  
...  
Keyword(s):  
Comparative Study ◽  
Positron Annihilation ◽  
Positron Annihilation Spectroscopy ◽  
Slow Positron

Point Defects in Gallium Arsenide Characterized by Positron Annihilation Spectroscopy and Deep Level Transient Spectroscopy

1994 ◽  
Vol 373 ◽  
Author(s):  
R. Mih ◽  
R. Gronsky
Keyword(s):  
Gallium Arsenide ◽  
Positron Annihilation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Czochralski Method ◽  
Positron Annihilation Spectroscopy ◽  
Crystallographic Data ◽  
Electrical Measurements ◽  
Vacancy Defects ◽  
Transient Spectroscopy

AbstractPositron annihilation lifetime spectroscopy (PALS) is a unique technique for detection of vacancy related defects in both as-grown and irradiated materials. We present a systematic study of vacancy defects in stoichiometrically controlled p-type Gallium Arsenide grown by the Hot- Wall Czochralski method. Microstructural information based on PALS, was correlated to crystallographic data and electrical measurements. Vacancies were detected and compared to electrical levels detected by deep level transient spectroscopy and stoichiometry based on crystallographic data.

scholarly journals A positron annihilation study of defect accumulation in phosphorus- and titanium-alloyed austenitic stainless steels under electron irradiation at room temperature

2020 ◽  
pp. 27-34
Author(s):  
D. A. Perminov ◽  
Keyword(s):  
Positron Annihilation ◽  
Electron Irradiation ◽  
Stainless Steels ◽  
Room Temperature ◽  
Austenitic Stainless Steels ◽  
Positron Annihilation Spectroscopy ◽  
High Concentration ◽  
Noticeable Effect ◽  
Vacancy Defects ◽  
Positron Annihilation Study

The effect of phosphorus and titanium additions on the accumulation of vacancy defects in Cr16Ni15Mo3 austenitic stainless steels under electron irradiation at room temperature is studied by positron annihilation spectroscopy. It is shown that, at this temperature, phosphorus has no noticeable effect on the accumulation of vacancy defects. This is due to the low mobility of vacancies and the low concentration of impurities. Titanium, due to its high concentration, enhances the accumulation of vacancy defects during irradiation, but this effect is weak.

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