scholarly journals A positron annihilation study of defect accumulation in phosphorus- and titanium-alloyed austenitic stainless steels under electron irradiation at room temperature

Author(s):  
D. A. Perminov ◽  

The effect of phosphorus and titanium additions on the accumulation of vacancy defects in Cr16Ni15Mo3 austenitic stainless steels under electron irradiation at room temperature is studied by positron annihilation spectroscopy. It is shown that, at this temperature, phosphorus has no noticeable effect on the accumulation of vacancy defects. This is due to the low mobility of vacancies and the low concentration of impurities. Titanium, due to its high concentration, enhances the accumulation of vacancy defects during irradiation, but this effect is weak.

2003 ◽  
Vol 792 ◽  
Author(s):  
C. H. Lam ◽  
C. C. Ling ◽  
C. D. Beling ◽  
S. Fung ◽  
H. M. Weng ◽  
...  

ABSTRACTPositron lifetime spectroscopy was employed to study the as-electron-irradiated (10 MeV, 1×1018 cm-2) n-type 6H silicon carbide sample in the measuring temperature range of 15 K to 294 K. Isochronal annealing studies were also performed up to the temperature of 1373 K by carrying out the room temperature positron lifetime measurement. Negatively charged carbon vacancies and VCVSi divacancy were identified as the major vacancy type defects induced by the electron irradiation process. The concentration of the VCVSi divacancy was found to decrease dramatically after the 1973 K annealing.


2006 ◽  
Vol 527-529 ◽  
pp. 571-574 ◽  
Author(s):  
X. Kerbiriou ◽  
Marie France Barthe ◽  
S. Esnouf ◽  
P. Desgardin ◽  
G. Blondiaux ◽  
...  

In this work we used Positron Annihilation Spectroscopy (PAS) and Electron Paramagnetic Resonance (EPR) to investigate the properties of vacancy defects produced by low energy electron irradiation. N-doped 3C-SiC and 6H-SiC monocrystals have been irradiated with electrons at different energies from 240keV to 900keV. EPR measurements show that Frenkel pairs VSi 3-/Si are created in 6H-SiC when electron irradiation is performed at low energy (240-360 keV). EPR also indicates that the silicon displacement threshold energy is higher in 3C-SiC than in 6HSiC. Moreover, PAS results show that the size and concentration of the vacancy defects decrease when the electron energy decreases for both polytypes. PAS detects vacancy defects in 240keV electron irradiated 3C-SiC, and the detection of the carbon vacancy is proposed.


2017 ◽  
Vol 373 ◽  
pp. 155-161
Author(s):  
Xing Zhong Cao ◽  
Er Yang Lu ◽  
Shuo Xue Jin ◽  
Yi Hao Gong ◽  
Yuan Chao Hu ◽  
...  

Solution annealed type 316L austenitic stainless steels were irradiated using 2 MeV Fe ions at room temperature. The implanted fluences were 2×1012 ions/cm2 and 1×1013 ions/cm2, respectively. Variable mono-energetic positron beam was performed to characterize the evolution of microstructure and irradiation induced defects. Results show that large amount of vacancy defects formed after heavy ion irradiation. In which, some of mono-vacancies might migrate to form small-sized clusters at room temperature. After irradiation, implanted Fe atoms mainly be interstitials atoms, but some Fe atoms might recombine with vacancies due to their high mobility, which could decrease the defect concentration, effectively.


2009 ◽  
Vol 106 (1) ◽  
pp. 013524 ◽  
Author(s):  
L. Kilanski ◽  
A. Zubiaga ◽  
F. Tuomisto ◽  
W. Dobrowolski ◽  
V. Domukhovski ◽  
...  

1991 ◽  
Vol 179-181 ◽  
pp. 526-528 ◽  
Author(s):  
Jiguang Sun ◽  
Jiapu Qian ◽  
Zhuoyong Zhao ◽  
Jiming Chen ◽  
Zengyu Xu

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