Modeling of the Influence of Schottky Barrier Inhomogeneities on SiC Diode Characteristics

2004 ◽  
Vol 457-460 ◽  
pp. 973-976 ◽  
Author(s):  
Roland Weiss ◽  
Lothar Frey ◽  
Heiner Ryssel
Keyword(s):  
Schottky Barrier ◽  
Barrier Inhomogeneities

Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

2019 ◽  
Vol 797 ◽  
pp. 582-588 ◽  
Author(s):  
Neetika ◽  
Sandeep Kumar ◽  
Amit Sanger ◽  
Hemant K. Chourasiya ◽  
Ashish Kumar ◽  
...  
Keyword(s):  
Transport Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Junction ◽  
Barrier Inhomogeneities

scholarly journals Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Ashutosh Kumar ◽  
M. Heilmann ◽  
Michael Latzel ◽  
Raman Kapoor ◽  
Intu Sharma ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Limited Current ◽  
Barrier Inhomogeneities

Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode

2012 ◽  
Vol 711 ◽  
pp. 188-192
Author(s):  
Muhammad Yousuf Zaman ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Effective Area ◽  
Medium Size ◽  
Current Voltage ◽  
Significant Difference ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics

Forward current-voltage characteristics of a medium sized (3.05mm2)Mo/4H-SiC (molyb-denum on silicon carbide) Schottky diode|fabricated for high power applications | are analysedwithin a temperature range of 125-450 K. Accurate theoretical modeling is carried out using Tung'smodel in which it is considered that numerous low barrier nanometer size patches, present in uniformhigh barrier, are responsible for the inhomogeneities in the Schottky barrier of SiC-based electronicdevices. A significant difference is observed between the effective area involved in the current trans-port and the geometric area of the Schottky contact along with a dependence of the ideality factor andhe barrier height on temperature. The obtained values of uniform Schottky barrier and Richardson'sconstant are seen to be in accordance with previous works. It is concluded that the above mentionedmodel can be used to describe the electrical behaviour of Mo/4H-SiC Schottky diodes.

Schottky Barrier Inhomogeneities in Nickel Silicide Transrotational Contacts

2011 ◽  
Vol 4 (11) ◽  
pp. 115701 ◽  
Author(s):  
Alessandra Alberti ◽  
Fabrizio Roccaforte ◽  
Sebania Libertino ◽  
Corrado Bongiorno ◽  
Antonino La Magna
Keyword(s):  
Schottky Barrier ◽  
Nickel Silicide ◽  
Barrier Inhomogeneities

Schottky barrier inhomogeneities at the interface of few layer epitaxial graphene and silicon carbide

2012 ◽  
Vol 100 (18) ◽  
pp. 183112 ◽  
Author(s):  
Shriram Shivaraman ◽  
Lihong H. Herman ◽  
Farhan Rana ◽  
Jiwoong Park ◽  
Michael G. Spencer
Keyword(s):  
Silicon Carbide ◽  
Schottky Barrier ◽  
Epitaxial Graphene ◽  
Barrier Inhomogeneities

Schottky barrier inhomogeneities at contacts to carbon-containing silicon/germanium alloys

2002 ◽  
Vol 89 (1-3) ◽  
pp. 284-287 ◽  
Author(s):  
A Hattab ◽  
J.L Perrossier ◽  
F Meyer ◽  
M Barthula ◽  
H.J Osten ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Silicon Germanium ◽  
Barrier Inhomogeneities ◽  
Silicon Germanium Alloys
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