Influence of barrier inhomogeneities on transport properties of Pt/MoS2 Schottky barrier junction

2019 ◽  
Vol 797 ◽  
pp. 582-588 ◽  
Author(s):  
Neetika ◽  
Sandeep Kumar ◽  
Amit Sanger ◽  
Hemant K. Chourasiya ◽  
Ashish Kumar ◽  
...  
Keyword(s):  
Transport Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Junction ◽  
Barrier Inhomogeneities

Atomic-Scale Physics and Modeling of Schottky Barrier Effect in Carbon Nanotube Nanoelectronics

2004 ◽  
Vol 858 ◽  
Author(s):  
Yongqiang Xue
Keyword(s):  
Carbon Nanotubes ◽  
Carbon Nanotube ◽  
Electron Transport ◽  
Transport Properties ◽  
Schottky Barrier ◽  
Channel Length ◽  
Atomic Scale ◽  
Barrier Effect ◽  
Metal Electrodes ◽  
Self Consistent

ABSTRACTWe present an atomistic self-consistent study of the electronic and transport properties of semiconducting carbon nanotubes in contact with metal electrodes at different contact geometries. We analyze the Schottky barrier effect at the metal-nanotube interface by examining the electrostatics, the band line up and the conductance of the metal-nanotube wire-metal junction as a function of the nanotube channel length, which leads to an effective decoupling of interface and bulk effects in electron transport through nanotube junction devices.

A schottky barrier junction based on nanometer-scale interpenetrating GaP/Gold networks

1997 ◽  
Vol 9 (7) ◽  
pp. 575-578 ◽  
Author(s):  
Daniel Vanmaekelbergh ◽  
Alfred Koster ◽  
Francisco Iranzo Marín
Keyword(s):  
Schottky Barrier ◽  
Nanometer Scale ◽  
Schottky Barrier Junction

scholarly journals Barrier inhomogeneities limited current and 1/f noise transport in GaN based nanoscale Schottky barrier diodes

2016 ◽  
Vol 6 (1) ◽  
Author(s):  
Ashutosh Kumar ◽  
M. Heilmann ◽  
Michael Latzel ◽  
Raman Kapoor ◽  
Intu Sharma ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Diodes ◽  
Limited Current ◽  
Barrier Inhomogeneities

Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode

2012 ◽  
Vol 711 ◽  
pp. 188-192
Author(s):  
Muhammad Yousuf Zaman ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Effective Area ◽  
Medium Size ◽  
Current Voltage ◽  
Significant Difference ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics

Forward current-voltage characteristics of a medium sized (3.05mm2)Mo/4H-SiC (molyb-denum on silicon carbide) Schottky diode|fabricated for high power applications | are analysedwithin a temperature range of 125-450 K. Accurate theoretical modeling is carried out using Tung'smodel in which it is considered that numerous low barrier nanometer size patches, present in uniformhigh barrier, are responsible for the inhomogeneities in the Schottky barrier of SiC-based electronicdevices. A significant difference is observed between the effective area involved in the current trans-port and the geometric area of the Schottky contact along with a dependence of the ideality factor andhe barrier height on temperature. The obtained values of uniform Schottky barrier and Richardson'sconstant are seen to be in accordance with previous works. It is concluded that the above mentionedmodel can be used to describe the electrical behaviour of Mo/4H-SiC Schottky diodes.

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