Schottky barrier inhomogeneities at the interface of different epitaxial layer thicknesses of n-GaAs/Ti/Au/Si: Al0.33Ga0.67As

ABSTRACTCharacterizations of transparent Schottky barrier GaN and AlGaN UV detectors in the vacuum UV (VUV) and soft X-ray (SX) region using synchrotron radiation are described. In the GaN UV detectors, the responsivity achieved about 0.05 A/W at 95 eV (13 nm). Thus, their device performance is shown between 3.4 and 100 eV (10 and 360 nm). Furthermore, the high responsivity spectra were realized by using AlGaN Schottky UV detectors consisting of Al0.5Ga0.5N on AlN epitaxial layer.

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First Principle Defect Analysis in 150 µm 4H-SiC Epitaxial Layer Schottky Barrier Detectors

2020 IEEE Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC) ◽

10.1109/nss/mic42677.2020.9507936 ◽

2020 ◽

Author(s):

Joshua W. Kleppinger ◽

Sandeep K. Chaudhuri ◽

OmerFaruk Karadavut ◽

Krishna C. Mandal

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

First Principle ◽

Defect Analysis ◽

Barrier Detectors

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Schottky Barrier Inhomogeneities of a 4H-SiC/Ni Contact in a Surface Barrier Detector

Journal of the Korean Physical Society ◽

10.3938/jkps.58.205 ◽

2011 ◽

Vol 58 (2) ◽

pp. 205-210 ◽

Cited By ~ 5

Author(s):

Jang Ho HA ◽

Han Soo KIM

Keyword(s):

Schottky Barrier ◽

Surface Barrier ◽

Surface Barrier Detector ◽

Barrier Inhomogeneities ◽

Barrier Detector

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ChemInform Abstract: HALL EFFECTS, SCHOTTKY BARRIER CAPACITANCE, AND PHOTOLUMINESCENCE SPECTRA MEASUREMENTS FOR GAAS EPITAXIAL LAYER AND THEIR CORRELATION

Chemischer Informationsdienst ◽

10.1002/chin.197447018 ◽

1974 ◽

Vol 5 (47) ◽

pp. no-no

Author(s):

T. KATODA ◽

T. SUGANO

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Photoluminescence Spectra ◽

Hall Effects ◽

Barrier Capacitance ◽

Gaas Epitaxial Layer

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Ion-Induced Anomalous Charge Collection Mechanisms in SiC Schottky Barrier Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.821-823.575 ◽

2015 ◽

Vol 821-823 ◽

pp. 575-578 ◽

Cited By ~ 1

Author(s):

Takahiro Makino ◽

Manato Deki ◽

Shinobu Onoda ◽

Norihiro Hoshino ◽

Hidekazu Tsuchida ◽

...

Keyword(s):

Electric Field ◽

Schottky Barrier ◽

Layer Thickness ◽

Epitaxial Layer ◽

Impact Ionization ◽

Heavy Ion ◽

Charge Collection ◽

Static Electric Field ◽

The Impact ◽

Lower Electric Field

The charge induced in SiC-SBDs with different epi-layer thicknesses by ion incidence was measured to understand the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. SiC SBD of which epitaxial-layer thicknesses is close to ion range show larger anomalous charge collection than SBD with thicker epi-layer although the former one has lower electric field than the later one. The gains of collected charge from the SBDs suggest that the impact ionization under 0.16 - 0.18 MV/cm of the static electric field in depletion layer is not dominant mechanisms for the anomalous charge collection. It is suggested that the epitaxial-layer thickness and ion-induced transient high electric field are key to understand the anomalous charge collection mechanisms in SBDs.

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Hall Effect, Schottky Barrier Capacitance, and Photoluminescence Spectra Measurements for GaAs Epitaxial Layer and Their Correlation

Journal of The Electrochemical Society ◽

10.1149/1.2401978 ◽

1974 ◽

Vol 121 (8) ◽

pp. 1066 ◽

Cited By ~ 19

Author(s):

T. Katoda ◽

T. Sugano

Keyword(s):

Hall Effect ◽

Schottky Barrier ◽

Epitaxial Layer ◽

Photoluminescence Spectra ◽

Barrier Capacitance ◽

Gaas Epitaxial Layer

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Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.1025 ◽

2005 ◽

Vol 483-485 ◽

pp. 1025-1028 ◽

Cited By ~ 4

Author(s):

Nikita B. Strokan ◽

Alexander M. Ivanov ◽

N.S. Savkina ◽

Alexander A. Lebedev ◽

Vitalii V. Kozlovski ◽

...

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Proton Irradiation ◽

Type Structure ◽

Particle Detectors ◽

Nuclear Particle ◽

P Type ◽

Nuclear Detectors ◽

Mev Protons

Nuclear-particle detectors based on SiC with a structure composed of an n+-type substrate, a p-type epitaxial layer, and a Schottky barrier are studied. Structures with a ~10-µm-thick 6H-SiC layer exhibit transistor properties, whereas those with a ~30-µm-thick 4H-SiC layer exhibit diode properties. It is established that a more than tenfold amplification of the signal is observed in the transistor-type structure. The amplification is retained after irradiation with 8-MeV protons with a dose of at least 5 × 10 13 cm –2 ; in this case, the resolution is ≤ 10%. Amplification of the signal was not observed in the structures of diode type. However, there were diode-type detectors with a resolution of ≈ 3%, which is acceptable for a number of applications, even after irradiation with the highest dose of 2 × 10 14 cm.

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Epitaxial Layer Thickness Dependence on Heavy Ion Induced Charge Collection in 4H-SiC Schottky Barrier Diodes

Materials Science Forum ◽

10.4028/www.scientific.net/msf.858.753 ◽

2016 ◽

Vol 858 ◽

pp. 753-756

Author(s):

Takahiro Makino ◽

Shinobu Onoda ◽

Norihiro Hoshino ◽

Hidekazu Tsuchida ◽

Takeshi Ohshima

Keyword(s):

Schottky Barrier ◽

Epitaxial Layer ◽

Impact Ionization ◽

Ion Irradiation ◽

Single Species ◽

Heavy Ion ◽

Charge Collection ◽

Lead Ion ◽

Induced Charge ◽

The Impact

The charge enhancement in SiC-Schottky Barrier Didoes (SBDs) with different epi-layer thicknesses under the condition of the single-species ion irradiation was simulated to find out the mechanism of heavy-ion-induced anomalous charge collection in SiC-SBDs. The value of ion induced charge depended on the thickness of epitaxial-layer in the SBDs. The simulation result suggests that the impact ionization is one of the key effects to lead ion induced charge enhancement.

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