Barrier Inhomogeneities of a Medium Size Mo/4H-SiC Schottky Diode

2012 ◽  
Vol 711 ◽  
pp. 188-192
Author(s):  
Muhammad Yousuf Zaman ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto
Keyword(s):  
Schottky Barrier ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Effective Area ◽  
Medium Size ◽  
Current Voltage ◽  
Significant Difference ◽  
Barrier Inhomogeneities ◽  
Current Voltage Characteristics

Forward current-voltage characteristics of a medium sized (3.05mm2)Mo/4H-SiC (molyb-denum on silicon carbide) Schottky diode|fabricated for high power applications | are analysedwithin a temperature range of 125-450 K. Accurate theoretical modeling is carried out using Tung'smodel in which it is considered that numerous low barrier nanometer size patches, present in uniformhigh barrier, are responsible for the inhomogeneities in the Schottky barrier of SiC-based electronicdevices. A significant difference is observed between the effective area involved in the current trans-port and the geometric area of the Schottky contact along with a dependence of the ideality factor andhe barrier height on temperature. The obtained values of uniform Schottky barrier and Richardson'sconstant are seen to be in accordance with previous works. It is concluded that the above mentionedmodel can be used to describe the electrical behaviour of Mo/4H-SiC Schottky diodes.

Evaluation of Correct Value of Richardson's Constant by Analyzing the Electrical Behavior of Three Different Diodes at Different Temperatures

2012 ◽  
Vol 711 ◽  
pp. 174-178 ◽  
Author(s):  
Muhammad Yousuf Zaman ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito ◽  
Marco Naretto
Keyword(s):  
Silicon Carbide ◽  
Schottky Diode ◽  
Schottky Diodes ◽  
Thermionic Emission ◽  
Effective Area ◽  
Large Area ◽  
Current Voltage ◽  
Different Temperatures ◽  
Barrier Inhomogeneities ◽  
Electrical Characterizations

Various attempts have been made to evaluate the correct value (A*=146 A/cm2.K2) ofRichardson's constant. In 2005 S. Ferrero et al. published their research in which they performedan analysis of electrical characterizations of twenty Ti/4H-SiC(titanium on silicon carbide) Schottkydiodes with the help of thermionic emission theory and evaluated the value of Richardson's constantto be 17±8 A/cm2.K2; which is very low as compared to the theoretical value of 146 A/cm2.K2.Wehave tried in this paper to evaluate the Richardson's constant's value by nearly same experimental tech-niques followed by S. Ferrero et al. and additionally, have applied Tung's theoretical approach whichdeals with the incorrect value of A* in the perspective of Schottky barrier inhomogeneities caused bythe presence of nanometer size low barrier patches present in the uniform high barrier of the Schottkydiode.We have fabricated two Ti/4H-SiC (titanium on silicon carbide) Schottky diodes with differentareas and oneMo/4H-SiC (molybdenumon silicon carbide) Schottky diode. In this paper we have pre-sented a comparative analysis of forward current-voltage characteristics of all three Schottky diodes.In all three cases we were successful in the evaluation of nearly correct value of Richardson's constant.This work emphasizes the effects of differentmetal-SiC combinations and laboratory environments onthe evaluation of Richardson's constant and the effective area involved in the current transport. As pre-dicted by Tung's model the effective area is seen to be substantially different from the geometric areaof the Schottky diode. Evaluated values of A*, with an error of ±2, come out to be 145.39, 148.33and 148.33 A/cm2.K2for Ti/4H-SiC(large area), Mo/4H-SiC and Ti/4H-SiC(small area) Schottkydiodes, respectively.

Impact of Interface Traps on Current-Voltage Characteristics of 4H-SiC Schottky-Barrier Diodes

2014 ◽  
Vol 778-780 ◽  
pp. 710-713 ◽  
Author(s):  
Hamid Amini Moghadam ◽  
Sima Dimitrijev ◽  
Ji Sheng Han
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface Traps ◽  
Barrier Heights ◽  
Current Voltage ◽  
Donor Type ◽  
Current Voltage Characteristics ◽  
Expected Values

This paper presents a physical model based on interface traps to explain both the larger barrier heights of practical Schottky diodes in comparison to the theoretically expected values and the appearance of a knee in the log I–V characteristics. According to this model, acceptor-type interface traps near the valance band increase the Schottky barrier height, which shifts the log I–V characteristic to higher forward-bias voltages. In addition to the acceptor traps, donor-type interface traps can appear near the conduction band, and when they do, they cause the knee in the log I–V characteristics as their energy level falls below the Fermi level and the charge associated with these traps changes from positive to neutral.

Contact-Related Deep States in AI-GaInP/GaAs Interface

1993 ◽  
Vol 325 ◽  
Author(s):  
Z.C. Huang ◽  
C.R. Wie
Keyword(s):  
Deep Level ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Temperature Dependent ◽  
Current Voltage ◽  
Oxygen Contamination ◽  
Related Defect ◽  
Current Voltage Characteristics ◽  
Transient Spectroscopy ◽  
Recombination Current

AbstractDeep levels have been measured in molecular beam epitaxy grown Ga0.51In0.49P/GaAs heterostructure by double correlation deep level transient spectroscopy. Gold(Au) and Aluminum (Al) metals were used for Schottky contact. A contact-related hole trap with an activation energy of 0.50-0.75eV was observed at the A1/GaInP interface, but not at the Au/GaInP interface. To our knowledge, this contact-related trap has not been reported before. We attribute this trap to the oxygen contamination, or a vacancy-related defect, VIn or VGa. A new electron trap at 0.28eV was also observed in both Au- and Al-Schottky diodes. Its depth profile showed that it is a bulk trap in GaInP epilayer. The temperature dependent current-voltage characteristics (I-V-T) show a large interface recombination current at the GaInP surface due to the Al-contact. Concentration of the interface trap and the magnitude of recombination current are both reduced by a rapid thermal annealing at/or above 450°C after the aluminum deposition.

scholarly journals Мощные диоды Шоттки с участком отрицательного дифференциального сопротивления на вольт-амперной характеристике

2021 ◽  
Vol 55 (1) ◽  
pp. 75
Author(s):  
А.Г. Тандоев ◽  
Т.Т. Мнацаканов ◽  
С.Н. Юрков
Keyword(s):  
Schottky Diode ◽  
Carrier Transport ◽  
Schottky Diodes ◽  
Differential Resistance ◽  
Analytical Investigation ◽  
Base Layer ◽  
Neutral Drift ◽  
Current Voltage ◽  
Current Densities ◽  
Current Voltage Characteristics

It is shown that at high current densities the carrier transport in base layer of Schottky diodes in addition to commonly accepted diffusive and drift currents is defined by recently discovered diffusion stimulated by quasi-neutral drift (DSQD). The influence of this recently discovered component of current on current-voltage characteristics of Schottky diode has been investigated. It was shown that in case if the ratio of base width $W$ to ambipolar diffusive length $L$ is higher than 1 ($W/L>1$) a part with negative differential resistance appears on the current-voltage characteristics of Schottky diode. The results of analytical investigation are confirmed by numerical calculation using INVESTIGATION program.

Schottky Barrier Height Dependence on the Metal Work Function for p-type Si Schottky Diodes

2004 ◽  
Vol 59 (11) ◽  
pp. 795-798 ◽  
Author(s):  
Güven Çankaya ◽  
Nazım Uçar
Keyword(s):  
Fermi Level ◽  
Schottky Barrier ◽  
Schottky Diodes ◽  
Metal Work Function ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Work Functions ◽  
P Type ◽  
Relationship Of ◽  
Metal Work

We investigated Schottky barrier diodes of 9 metals (Mn, Cd, Al, Bi, Pb, Sn, Sb, Fe, and Ni) having different metal work functions to p-type Si using current-voltage characteristics. Most Schottky contacts show good characteristics with an ideality factor range from 1.057 to 1.831. Based on our measurements for p-type Si, the barrier heights and metal work functions show a linear relationship of current-voltage characteristics at room temperature with a slope (S=ϕb/ϕm) of 0.162, even though the Fermi level is partially pinned. From this linear dependency, the density of interface states was determined to be about 4.5 · 1013 1/eV per cm2, and the average pinning position of the Fermi level as 0.661 eV below the conduction band

scholarly journals Reversible Barrier Switching of ZnO/RuO2 Schottky Diodes

Materials ◽  
2021 ◽  
Vol 14 (10) ◽  
pp. 2678
Author(s):  
Philipp Wendel ◽  
Dominik Dietz ◽  
Jonas Deuermeier ◽  
Andreas Klein
Keyword(s):  
Magnetron Sputtering ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Oxygen Vacancies ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Hysteresis Behavior ◽  
Current Voltage ◽  
Current Voltage Characteristics

The current-voltage characteristics of ZnO/RuO2 Schottky diodes prepared by magnetron sputtering are shown to exhibit a reversible hysteresis behavior, which corresponds to a variation of the Schottky barrier height between 0.9 and 1.3 eV upon voltage cycling. The changes in the barrier height are attributed to trapping and de-trapping of electrons in oxygen vacancies.

Analysis of Barrier Inhomogeneities of P-Type Al/4H-SiC Schottky Barrier Diodes

2020 ◽  
Vol 1004 ◽  
pp. 960-972
Author(s):  
Mehadi Hasan Ziko ◽  
Ants Koel ◽  
Toomas Rang ◽  
Jana Toompuu
Keyword(s):  
Schottky Barrier ◽  
Deep Level ◽  
Numerical Study ◽  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Schottky Barrier Diodes ◽  
Schottky Rectifiers ◽  
Barrier Inhomogeneities ◽  
P Type

The diffusion welding (DW), known as direct bonding technique could be more used as an alternative approach to develop silicon carbide (SiC) Schottky rectifiers to existing mainstream metallization contact technologies. Measured results for p-type 4H-SiC Schottky barrier diodes (SBD) arepresented. And comprehensive numerical study to characterize the device has been performed. The simulations are carried out with ATLAS software (Silvaco). The measured and numerically simulated forward current-voltage (I–V) and capacitance-voltage (C–V) characteristics in a large temperaturerange are analyzed. Some of the measured p-type 4H-SiC Schottky diodes show deviation in specific ranges of their electrical characteristics. This deviation, especially due to excess current, dominates at low voltages (less than 1 V) and temperatures (less than room temperature). To verify the existence of electrically active defects under the Schottky contact, which influences the Schottky barrier height (SBH) and its inhomogeneity, the deep level transient spectroscopy (DLTS) technology was applied. DLTS measurements show the presence of a deep-level defect with activation energy corresponding typically for multilevel trap clusters.

The Schottky Parameter Test for Combined Diffusion Welded and Sputter Large Area Contacts

2007 ◽  
Vol 556-557 ◽  
pp. 737-740
Author(s):  
Oleg Korolkov ◽  
Natalja Sleptsuk ◽  
Toomas Rang ◽  
A. Syrkin ◽  
Vladimir Dmitriev
Keyword(s):  
Schottky Diodes ◽  
Schottky Contact ◽  
Diffusion Welding ◽  
Large Area ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Parameter Test ◽  
And Diffusion ◽  
Surprising Fact

For more authentic comparison of Schottky parameters between combined sputter (Ti/Ni/Au) and diffusion welded (DW) Al contact and direct DW Al contact to SiC the forward current-voltage characteristics were measured at the temperature range 293-473 K on full-packed 0.3 cm2 Schottky diodes. Surprising fact was discovered that the temperature behaviour of parameters remains of the same character for both kind of contacts but for the combined sputter- DW samples the values of parameters is much closer in magnitude to sputter contacts. Apparently, chemical treatment before the DW process preserves untouched the contact surface layer formed by annealing of initial sputter metallization of the chips (e.g. Ni2Si, Ti3SiC2), and this layer serves as barrier during diffusion welding. In the second part of the work we give the results on long-term reliability testing where through the SiC Schottky diode with the DW Al contacts during 300 hr has been passed constant forward stabilized current of 100 A/cm2 density. The primary and final values of Uf for DW Schottky contact have not changed during the test.

scholarly journals Forward current-voltage characteristics simulation of 4H-SiC silicon carbide Schottky diode for power electronics

2017 ◽  
Vol 5 (1) ◽  
pp. 11
Author(s):  
S.B. Rybalka ◽  
E.Yu. Krayushkina ◽  
A.A. Demidov ◽  
O.A. Shishkina ◽  
B.P. Surin
Keyword(s):  
Schottky Diode ◽  
Schottky Contact ◽  
Thermionic Emission ◽  
Analytical Models ◽  
Drift Diffusion ◽  
Continuity Equations ◽  
Forward Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
The Ideal

Forward current-voltage characteristics of 4H-SiC Schottky diode with Ni Schottky contact have been simulated based on in the physical analytical models based on Poisson’s equation, drift-diffusion and continuity equations. On the base of analysis of current-voltage characteristics in terms of classical thermionic emission theory it is established that the proposed simulation model of Schottky diode corresponds to the “ideal” diode with average ideality factor n»1.1 at low temperature ~300 K. It is determined that effective Schottky barrier height equals 1.1 eV for Ni/4H-SiC Schottky diode.

Barrier Inhomogeneities of Mo Schottky Barrier Diodes on 4H-SiC

2010 ◽  
Vol 645-648 ◽  
pp. 227-230
Author(s):  
Marco Naretto ◽  
Denis Perrone ◽  
Sergio Ferrero ◽  
Luciano Scaltrito
Keyword(s):  
Schottky Barrier ◽  
Room Temperature ◽  
Schottky Barrier Height ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
Current Theory ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Barrier Inhomogeneities

In this work we present the results of electrical characterization of 4H-SiC power Schottky diodes with a Mo metal barrier for high power applications. A comparison between different Schottky Barrier Height (SBH) evaluation methods (capacitance-voltage and current-voltage measurements), together with the comparison with other authors’ works, indicates that thermionic current theory is the dominant transport mechanism across the barrier from room temperature (RT) to 450K, while at T < 300K some anomalies in J-V curves appear and SBH and ideality factor significantly change their values. These deviations from ideality are attributed to Schottky barrier inhomogeneities. In particular, a model based on two SBHs seems appropriate to properly describe the electrical behavior of our devices.

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