Characterization of Plasma Immersion Deposited Multilayer Coatings by Ion Beam Techniques Combined with Energy Filtered Transmission Electron Microscopy

2005 ◽  
Vol 908 ◽  
Author(s):  
Florian Schwarz ◽  
Joerg K. N. Lindner ◽  
Maik Häeberlen ◽  
Goetz Thorwarth ◽  
Claus Hammerl ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Ion Beam ◽  
Hard Coatings ◽  
Elemental Distribution ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Beam Analysis

AbstractMultilayered and nanostructured coatings of amorphous carbon (DLC), silicon composite multilayers and nanocluster containing films today have great potential for applications as hard coatings, wear reduction layers and as diffusion barriers in biomaterials. Plasma immersion ion implantation and deposition (PIII&D) is a powerful technique to synthesize such films. The quantitative nanoscale analysis of the elemental distribution in such multielemental films and thin film stacks however is demanding.In this paper it is shown how the high spatial resolution capabilities of energy filtered trans-mission electron microscopy (EFTEM) chemical analysis can be combined with accurate and standard-less concentration determination of ion beam analysis (IBA) techniques like Rutherford Backscattering Spectroscopy (RBS) and Elastic Recoil Detection Analysis (ERDA) to achieve absolute and accurate multielement concentration profiles in complicated nanomaterials.

scholarly journals Growth and characterization of TiN/SiN(001) superlattice films

2007 ◽  
Vol 22 (11) ◽  
pp. 3255-3264 ◽  
Author(s):  
Hans Söderberg ◽  
Magnus Odén ◽  
Axel Flink ◽  
Jens Birch ◽  
Per O.Å. Persson ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Layer Structure ◽  
Elastic Recoil ◽  
Reciprocal Space Mapping ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Scanning Transmission

We report the layer structure and composition in recently discovered TiN/SiN(001) superlattices deposited by dual-reactive magnetron sputtering on MgO(001) substrates. High-resolution transmission electron microscopy combined with Z-contrast scanning transmission electron microscopy, x-ray reflection, diffraction, and reciprocal-space mapping shows the formation of high-quality superlattices with coherently strained cubic TiN and SiN layers for SiN thickness below 7–10 Å. For increasing SiN layer thicknesses, a transformation from epitaxial to amorphous SiNx (x ⩾ 1) occurs during growth. Elastic recoil detection analysis revealed an increase in nitrogen and argon content in SiNx layers during the phase transformation. The oxygen, carbon, and hydrogen contents in the multilayers were around the detection limit (∼0.1 at.%) with no indication of segregation to the layer interfaces. Nanoindentation experiments confirmed superlattice hardening in the films. The highest hardness of 40.4 ± 0.8 GPa was obtained for 20-Å TiN with 5-Å-thick SiN(001) interlayers, compared to monolithic TiN at 20.2 ± 0.9 GPa.

scholarly journals Morphology, Microstructure, and Hydrogen Content of Carbon Nanostructures Obtained by PECVD at Various Temperatures

2017 ◽  
Vol 2017 ◽  
pp. 1-8 ◽  
Author(s):  
M. Acosta Gentoiu ◽  
R. Betancourt-Riera ◽  
S. Vizireanu ◽  
I. Burducea ◽  
V. Marascu ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Photoelectron Spectroscopy ◽  
Carbon Nanostructures ◽  
Strong Dependence ◽  
Argon Plasma ◽  
Elastic Recoil ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Aligned Carbon Nanotubes

Carbon nanostructures were obtained by acetylene injection into an argon plasma jet in the presence of hydrogen. The samples were synthesized in similar conditions, except that the substrate deposition temperatures TD were varied, ranging from 473 to 973 K. A strong dependence of morphology, structure, and graphitization upon TD was found. We obtained vertical aligned carbon nanotubes (VA-CNTs) at low temperatures as 473 K, amorphous carbon nanoparticles (CNPs) at temperatures from about 573 to 673 K, and carbon nanowalls (CNWs) at high temperatures from 773 to 973 K. Fourier transform infrared spectroscopy, scanning electron microscopy, transmission electron microscopy, elastic recoil detection analysis, X-ray photoelectron spectroscopy, and Raman spectroscopy were used to substantiate the differences in these material types. It is known that hydrogen concentration modifies strongly the properties of the materials. Different concentrations of hydrogen-bonded carbon could be identified in amorphous CNP, VA-CNT, and CNW. Also, the H : C ratios along depth were determined for the obtained materials.

scholarly journals Time-Of-Flight ERDA for Depth Profiling of Light Elements

2020 ◽  
Vol 4 (4) ◽  
pp. 40
Author(s):  
Keisuke Yasuda
Keyword(s):  
Ion Beam ◽  
Time Of Flight ◽  
Depth Profiling ◽  
Depth Resolution ◽  
Semiconductor Detectors ◽  
Light Elements ◽  
Elastic Recoil ◽  
Measurement Sensitivity ◽  
Elastic Recoil Detection ◽  
Detection Analysis

The time-of-flight elastic recoil detection analysis (TOF-ERDA) method is one of the ion beam analysis methods that is capable of analyzing light elements in a sample with excellent depth resolution. In this method, simultaneous measurements of recoil ion energy and time of flight are performed, and ion mass is evaluated. The energy of recoil ions is calculated from TOF, which gives better energy resolution than conventional Silicon semiconductor detectors (SSDs). TOF-ERDA is expected to be particularly applicable for the analysis of light elements in thin films. In this review, the principle of TOF-ERDA measurement and details of the measurement equipment along with the performance of the instrumentation, including depth resolution and measurement sensitivity, are described. Examples of TOF-ERDA analysis are presented with a focus on the results obtained from the measurement system developed by the author.

Comparative study of the oxide scale thermally grown on titanium alloys by ion beam analysis techniques and scanning electron microscopy

2008 ◽  
Vol 23 (8) ◽  
pp. 2245-2253 ◽  
Author(s):  
A. Gutiérrez ◽  
F. Pászti ◽  
A. Climent-Font ◽  
J.A. Jiménez ◽  
M.F. López
Keyword(s):  
Electron Microscopy ◽  
Scanning Electron Microscopy ◽  
Chemical Composition ◽  
Titanium Alloys ◽  
Oxide Scale ◽  
Ion Beam ◽  
Elastic Recoil ◽  
Detection Analysis ◽  
Nb Content ◽  
Scanning Electron

In the present work, the oxide layers developed at elevated temperature on three vanadium-free titanium alloys, of interest as implant biomaterials, were studied by Rutherford backscattering spectroscopy, elastic recoil detection analysis, and scanning electron microscopy. The chemical composition of the alloys investigated, in wt%, was Ti–7Nb–6Al, Ti–13Nb–13Zr, and Ti–15Zr–4Nb. Upon oxidation in air at 750 °C, an oxide scale forms, with a chemical composition, morphology, and thickness that depend on the alloy composition and the oxidation time. After equal exposure time, the Ti–7Nb–6Al alloy exhibited the thinnest oxide layer due to the formation of an Al2O3-rich layer. The oxide scale of the two TiNbZr alloys is mainly composed of Ti oxides, with small amounts of Nb and Zr dissolved. For both TiNbZr alloys, the role of the Nb-content on the mechanism of the oxide formation is discussed.

High Quality P-Doped μc-Si:H Films as Obtained by low Temperature Lpcvd of Disilane

1992 ◽  
Vol 283 ◽  
Author(s):  
C. Manfredotti ◽  
F. Fizzotti ◽  
G. Amato ◽  
L. Boarino ◽  
M. Abbas
Keyword(s):  
Chemical Vapor ◽  
Elastic Recoil ◽  
Volume Percentage ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Pressure Chemical ◽  
Convergent Beam ◽  
P Type ◽  
High Degree

ABSTRACTBoth B- and P- doped silicon films deposited by Low Pressure Chemical Vapor Deposition (LPCVD) at 300 °C (p-type) and 420 °C (n-type) have been characterized by optical absorption, Photothermal Deflection Spectroscopy (PDS), resistivity, Elastic Recoil Detection Analysis (ERDA), Transmission Electron Microscopy (TEM), Convergent-Beam Electron Diffraction (CBED) and Raman spectroscopy measurements. P-doped films, deposited at large PH3 flux rates, show a high degree of microcrystallinity, indicating that P activates the nucleation process even at low temperatures. In this case, values of activation energy of resistivity as low as 0.007 eV were obtained. Both TEM and RAMAN results confirm a volume percentage of micro crystallinity above 30%. On the contrary, B-doped samples are not microcrystalline at least in the doping range investigated, and show a behaviour not different from samples deposited by PECVD.

Transmission Electron Microscopy Investigations of Metal-Impurity-Related Defects in Crystalline Silicon

2011 ◽  
Vol 178-179 ◽  
pp. 275-284 ◽  
Author(s):  
Michael Seibt ◽  
Philipp Saring ◽  
Philipp Hahne ◽  
Linda Stolze ◽  
M.A. Falkenberg ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
Focused Ion Beam ◽  
Crystalline Silicon ◽  
Ion Beam ◽  
Extended Defects ◽  
Metal Impurity ◽  
Transmission Electron ◽  
Electron Beam Induced Current

This contribution summarizes recent efforts to apply transmission electron microscopy (TEM) techniques to recombination-active extended defects present in a low density. In order to locate individual defects, electron beam induced current (EBIC) is applied in situ in a focused ion beam (FIB) machine combined with a scanning electron microscope. Using this approach defect densities down to about 10cm-2 are accessible while a target accuracy of better than 50nm is achieved. First applications described here include metal impurity related defects in multicrystalline silicon, recombination and charge collection at NiSi2 platelets, internal gettering of copper by NiSi2 precipitates and site-determination of copper atoms in NiSi2.

Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

2005 ◽  
Vol 483-485 ◽  
pp. 287-290
Author(s):  
H. Colder ◽  
M. Morales ◽  
Richard Rizk ◽  
I. Vickridge
Keyword(s):  
Nuclear Reaction ◽  
Hydrogen Content ◽  
Rutherford Backscattering Spectrometry ◽  
Ion Beam ◽  
Nuclear Reaction Analysis ◽  
Elastic Recoil ◽  
Crystalline Fraction ◽  
Elastic Recoil Detection ◽  
Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

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