Composition and Structure of Sputter Deposited Erbium Hydride thin Films

AbstractErbium hydride thin films are grown onto polished, a-axis α Al2O3 (sapphire) substrates by reactive ion beam sputtering and analyzed to determine composition, phase and microstructure. Erbium is sputtered while maintaining a H2 partial pressure of 1.4 ×10−4 Torr. Growth is conducted at several substrate temperatures between 30 and 500°C. Rutherford backscattering spectrometry (RBS) and elastic recoil detection analyses after deposition show that the H/Er areal density ratio is approximately 3:1 for growth temperatures of 30, 150 and 275°C, while for growth above ∼430 °C, the ratio of hydrogen to metal is closer to 2:1. However, x-ray diffraction shows that all films have a cubic metal sublattice structure corresponding to that of ErH2. RBS and Auger electron spectroscopy confirm that sputtered erbium hydride thin films are relatively free of impurities.

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Characterization of SiC Thin Film Obtained by Magnetron Reactive Sputtering: IBA, IR and Raman Studies

Materials Science Forum ◽

10.4028/www.scientific.net/msf.483-485.287 ◽

2005 ◽

Vol 483-485 ◽

pp. 287-290

Author(s):

H. Colder ◽

M. Morales ◽

Richard Rizk ◽

I. Vickridge

Keyword(s):

Nuclear Reaction ◽

Hydrogen Content ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Nuclear Reaction Analysis ◽

Elastic Recoil ◽

Crystalline Fraction ◽

Elastic Recoil Detection ◽

Beam Analysis

Co-sputtering of silicon and carbon in a hydrogenated plasma (20%Ar-80%H2) at temperatures, Ts, varying from 200°C to 600°C has been used to grow SiC thin films. We report on the influence of Ts on the crystallization, the ratio Si/C and the hydrogen content of the grown films. Film composition is determined by ion beam analysis via Rutherford backscattering spectrometry, nuclear reaction analysis via the 12C(d,p0)13C nuclear reaction and elastic recoil detection analysi(ERDA) for hydrogen content. Infrared absorption (IR) has been used to determine the crystalline fraction of the films and the concentration of the hydrogen bonded to Si or to C. Complementary to IR, bonding configuration has been also characterized by Raman spectroscopy. As Ts is increased, the crystalline fraction increases and the hydrogen content decreases, as observed by both ERDA and IR. It also appears that some films contain a few Si excess, probably located at the nanograin boundaries.

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Quantitative compositional depth profiling of Si1−x−yGexCy thin films by simultaneous elastic recoil detection and Rutherford backscattering spectrometry

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/s0168-583x(97)00881-1 ◽

1998 ◽

Vol 136-138 ◽

pp. 654-660 ◽

Cited By ~ 1

Author(s):

S.C. Gujrathi ◽

S. Roorda ◽

J.G. D'Arcy ◽

Randall J. Pflueger ◽

P. Desjardins ◽

...

Keyword(s):

Thin Films ◽

Rutherford Backscattering Spectrometry ◽

Depth Profiling ◽

Rutherford Backscattering ◽

Elastic Recoil ◽

Elastic Recoil Detection ◽

Compositional Depth Profiling

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Thermoelectric Properties of Zn-Sb Thin Films Grown by Ion Beam Sputtering

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.538-541.154 ◽

2012 ◽

Vol 538-541 ◽

pp. 154-157

Author(s):

Peng Juan Liu ◽

Ping Fan ◽

Zhuang Hao Zheng ◽

Dong Ping Zhang ◽

Xing Min Cai ◽

...

Keyword(s):

Thin Films ◽

Seebeck Coefficient ◽

Thermoelectric Properties ◽

Power Factor ◽

Room Temperature ◽

Ion Beam ◽

Composition Analysis ◽

Ion Beam Sputtering ◽

Beam Sputtering ◽

Sputter Deposited

Antimony (Sb) and zinc (Zn) bilayer was sputter-deposited at room temperature with various Zn contents by ion-beam sputtering and transformed into Antimony zinc after post thermal annealed at 573K for 60 min. A power factor of 6.18×10-4 W/mK2 at 473 K has been obtained when the sputtering time of the Zn was 20 minutes. The maximum Seebeck coefficient is 42.0 μVK-1. Composition analysis shows that the compound of SbZn is achieved and the small Seebeck coefficient is due to the deviation of stoichiometric.

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Ion Beam Analyses of Moisture Reaction for Single Crystal Lithium Deuteride

MRS Advances ◽

10.1557/adv.2020.143 ◽

2020 ◽

Vol 5 (11) ◽

pp. 549-558

Author(s):

C. Haertling ◽

R. J. Hanrahan ◽

Y. Wang ◽

C. Wetteland

Keyword(s):

Single Crystal ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

Hydrolysis Product ◽

Initial Growth ◽

Elastic Recoil ◽

Island Growth ◽

Elastic Recoil Detection ◽

Hydrolysis Rates ◽

Lithium Deuteride

ABSTRACTIon beam analyses were completed on single crystal LiD (lithium hydride with deuterium on the hydrogen sites) to determine products of hydrolysis with decarbonated H2O (with protium-hydrogen) in an inert gas. Rutherford backscattering spectrometry showed movement of oxygen into the bulk of LiD samples. Hydrolysis rates for the single crystal LiD showed relatively slow initial growth of an oxygen-containing layer. Final growth rates varied widely with H2O level, from 1010 to 1015 (atoms/cm2)/min. at 5.6 and 28 mmol/min. H2O respectively. Simulations of spectra show the hydrolysis product to be LiOH. Elastic recoil detection identifies the hydrogen in the hydroxide layer upon dosing with H2O (with natural, protiated hydrogen) as primarily protium. Micrographs showed island growth occurring initially, with convergence to a full-coverage hydrolysis layer.

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