Improvement in Electrical Performance of Schottky Contacts for High-Voltage Diode
2005 ◽
Vol 483-485
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pp. 721-724
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Keyword(s):
We investigated the effect of high temperature annealing on the Schottky barrier height (Fb) and the ideality factor (n-factor) of a Mo contact. In a Mo contact, the Fb increased and the leakage current decreased by annealing at 600oC, while no increase in n-factor and forward excess current owing to the high temperature annealing was observed. The Schottky barrier diode with Mo contact annealed at 600oC showed a blocking-voltage (Vb) of 4.15 kV and a specific on resistance (Ron) of 9.07 mWcm2, achieving a high Vb 2/Ron value of 1898 MW/cm2.
2008 ◽
Vol 600-603
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pp. 1341-1344
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2011 ◽
Vol 50
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pp. 036603
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Keyword(s):
Keyword(s):
2017 ◽
2006 ◽
Vol 527-529
◽
pp. 915-918
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2014 ◽
Vol 492
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pp. 331-334