High Power Lateral Epitaxy MESFET Technology in Silicon Carbide

2005 ◽  
Vol 483-485 ◽  
pp. 853-856 ◽  
Author(s):  
Andrey O. Konstantinov ◽  
Chris I. Harris ◽  
I.C. Ray
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Total Output ◽  
Output Impedance ◽  
Total Output Power ◽  
Hot Carrier ◽  
High Impedance ◽  
Input And Output ◽  
Heavily Doped ◽  
Lateral Epitaxy

High impedance silicon carbide power RF transistors are reported, which use the technology of Lateral Epitaxy Metal-Semiconductor FET (LEMES). The LEMES transistor utilizes a heavily doped buried depletion stopper to increase output impedance and breakdown voltage and to eliminate undesirable hot-carrier trapping effects. A power density of 2-3 W/mm at 2 GHz is routinely achieved resulting in a total output power of 10W for packaged components. The value of input and output impedance is around 50 Ohms for a frequency of around 2 GHz.

High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

2006 ◽  
pp. 1231-1234
Author(s):  
Andrey O. Konstantinov ◽  
J.O. Svedberg ◽  
I.C. Ray ◽  
Chris I. Harris ◽  
Christer Hallin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
High Efficiency ◽  
Lateral Epitaxy

High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide

2006 ◽  
Vol 527-529 ◽  
pp. 1231-1234
Author(s):  
Andrey O. Konstantinov ◽  
J.O. Svedberg ◽  
I.C. Ray ◽  
Chris I. Harris ◽  
Christer Hallin ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Single Cell ◽  
High Power ◽  
High Efficiency ◽  
Large Area ◽  
Short Channel ◽  
Novel Structure ◽  
Channel Effects ◽  
Cell Components ◽  
Lateral Epitaxy

High power high efficiency silicon carbide RF MESFETs are fabricated using a novel structure utilizing lateral epitaxy. The MESFET employs buried p-type depletion stoppers grown by lateral epitaxy with subsequent planarization. The depletion stopper is epitaxially overgrown by the channel layer. The depletion stopper suppresses short channel effects and increases the operation voltage and the RF signal gain at high voltage operation. High breakdown voltages of over 200 Volts are achieved for single-cell components, however large-area transistors are limited to around 150 Volts. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and high unilateral gain. Packaged 6-mm RF transistors in amplifier circuits feature a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.

Silicon carbide high-power devices

1996 ◽  
Vol 43 (10) ◽  
pp. 1732-1741 ◽  
Author(s):  
C.E. Weitzel ◽  
J.W. Palmour ◽  
C.H. Carter ◽  
K. Moore ◽  
K.K. Nordquist ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power ◽  
Power Devices

Physical Properties of SiC

MRS Bulletin ◽  
1997 ◽  
Vol 22 (3) ◽  
pp. 25-29 ◽  
Author(s):  
W.J. Choyke ◽  
G. Pensl
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Physical Properties ◽  
Chemical Bond ◽  
High Power ◽  
National Program ◽  
High Radiation ◽  
Electrical Switching ◽  
Oil Drilling ◽  
Drilling Technology

While silicon carbide has been an industrial product for over a century, it is only now emerging as the semiconductor of choice for high-power, high-temperature, and high-radiation environments. From electrical switching and sensors for oil drilling technology to all-electric airplanes, SiC is finding a place which is difficult to fill with presently available Si or GaAs technology. In 1824 Jöns Jakob Berzelius published a paper which suggested there might be a chemical bond between the elements carbon and silicon. It is a quirk of history that he was born in 1779 in Linköping, Sweden where he received his early education, and now, 172 years later, Linkoping University is the center of a national program in Sweden to study the properties of SiC as a semiconductor.

scholarly journals Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.

1992 ◽  
Vol 20 (12) ◽  
pp. 970-979
Author(s):  
Masato OHMUKAI ◽  
Hiroyoshi NAITO ◽  
Masahiro OKUDA ◽  
Kou KUROSAWA ◽  
Wataru SASAKI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Excimer Laser Irradiation

Advanced operational techniques and pn-pn-pn structures for high-power silicon carbide gate turn-off thyristors

2002 ◽  
Vol 17 (6) ◽  
pp. 1073-1079 ◽  
Author(s):  
P.B. Shah ◽  
B.R. Geil ◽  
M.E. Ervin ◽  
T.E. Griffin ◽  
S.B. Bayne ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
High Power

High Power SiC MESFETs

2006 ◽  
Vol 911 ◽  
Author(s):  
Christopher Harris ◽  
Andrei O Konstantinov ◽  
Jan-Olov Svedberg ◽  
Ian Ray ◽  
Christer Hallin
Keyword(s):  
High Power ◽  
High Efficiency ◽  
Total Power ◽  
Short Channel ◽  
Class Ab ◽  
Channel Effects ◽  
Cell Components ◽  
Lateral Epitaxy ◽  
P Type ◽  
Rf Signal

AbstractThe development of high power, high efficiency silicon carbide RF MESFETs is reported. High power densities of over 3W/mm have been measured for devices with total power output in excess of 25W. The devices have been fabricated using a novel lateral epitaxy technique. The MESFET employs a buried p-type depletion stopper in order to suppress short channel effects and increase the operation voltage. The use of the depletion stopper also allows high RF signal gain, while maintaining high voltage operation capability. Single-cell components measured on-wafer demonstrate an Ft of 10 GHz and a high unilateral gain.Packaged 6-mm RF transistors have been evaluated using amplifier circuits designed for operation in classes A, AB or C. Operation in class AB demonstrated a saturated power of 20 W and a P1dB of 15W with a linear gain of over 16 dB at Vdd of 60 V for 2.25 GHz operation. Maximum drain efficiency is 56% for class AB operation, 48% at 1 dB compression point and 72% for class C at 2.25 GHz.

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