Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

This paper investigated the effects of annealing atmosphere on the carrier concentration, carrier mobility, electrical resistivity, and PL characteristics as well as the crystallinity of ZnO films deposited on sapphire substrates by atomic layer deposition (ALD). X-ray diffraction (XRD) and photoluminescence (PL) analyses, and Hall measurement were performed to investigate the crystallinity, optical properties and electrical properties of the ZnO thin films, respectively. According to the XRD analysis results, the crystallinity of the ZnO film annealed in an oxygen atmosphere is better than that of the ZnO film annealed in a nitrogen atmosphere. It was found that annealing undoped ZnO films grown by ALD at a high temperature above 600°C improves the crystallinity and enhances UV emission.

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Growth of ZnO Thin Films on Silicon Substrates by Atomic Layer Deposition

Defect and Diffusion Forum ◽

10.4028/www.scientific.net/ddf.329.159 ◽

2012 ◽

Vol 329 ◽

pp. 159-164 ◽

Cited By ~ 4

Author(s):

Rosniza Hussin ◽

Xiang Hui Hou ◽

Kwang Leong Choy

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Growth Mechanism ◽

Semiconductor Industry ◽

Hexagonal Wurtzite Structure ◽

Atomic Layer ◽

Xrd Analysis ◽

Zno Thin Films ◽

Zno Films ◽

Layer Deposition

Atomic Layer Deposition (ALD) Offers the Key Benefits of Precise Deposition of Nanostructured Thin Films with Excellent Conformal Coverage. ALD Is Being Used in the Semiconductor Industry for Producing High-k (high Permittivity) Gate Oxides and High-K Memory Capacitor Dielectrics. Zno Has Attractive Properties for Various Applications such as Semiconductors, Gas Sensors and Solar Cells. in this Study, ZnO Thin Films Were Deposited via ALD Using Alternating Exposures of Diethyl Zinc (DEZ) and Deionized Water (H2O) on Silicon Wafer (100). the Thin Films Were Analyzed Using X-Ray Diffraction (XRD), Ellipsometer and Atomic Force Microscope (AFM). the XRD Analysis Shows the Presence of ZnO Thin Films with a Hexagonal Wurtzite Structure. the Thickness of ZnO Thin Films Was Correlated with the Substrate Temperatures and Deposition Cycles. the Coating Thickness Was Found to Increase with the Increase of the Deposition Cycles, but it Decreased with the Increase of Deposition Temperature. the Nucleation and Growth Mechanism of Zno Thin Film Has Been Established. it Can Be Concluded that, the Growth Mechanism of Zno Films Is Strongly Dependent on the ALD Processing Conditions.

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Effects of Annealing Atmosphere on the Optoelectrical Properties of ZnO Thin Films Grown by Atomic Layer Deposition

Materials Science Forum - Eco-Materials Processing & Design VII ◽

10.4028/0-87849-995-4.670 ◽

2006 ◽

pp. 670-673

Author(s):

Chong Mu Lee ◽

Yeon Kyu Park ◽

Anna Park ◽

Choong Mo Kim

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

Atomic Layer ◽

Zno Thin Films ◽

Annealing Atmosphere ◽

Layer Deposition

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Characterization of ZnO Thin Films Fabricated by Atomic Layer Deposition with Various Temperatures

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.650.18 ◽

2013 ◽

Vol 650 ◽

pp. 18-23 ◽

Cited By ~ 1

Author(s):

Tsai Cheng Li ◽

Rwei Ching Chang ◽

Pei Sin Jhu

Keyword(s):

Thin Films ◽

Atomic Layer Deposition ◽

High Performance ◽

Atomic Layer ◽

Zno Thin Films ◽

Zno Films ◽

Sputtered Films ◽

Layer Deposition ◽

Substrate Temperatures

Atomic layer deposition (ALD) is utilized to grow high performance zinc oxide (ZnO) thin films, where the effects of ALD process temperature on the thin film properties are also studied in this work. Some major properties of the ALD ZnO films are characterized and compared with those of sputtered ZnO films. Significant differences are observed that the electrical resistances of the ALD ZnO films are largely improved, while the optical transmittances also increase. Nevertheless, the adhesion and mechanical properties of the ALD films are worse than the sputtered films because of the weak bonding in the ALD process. For various substrate temperatures, the ALD ZnO films with 200°C behave the best performance.

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Elucidating the growth mechanism of ZnO films by atomic layer deposition with oxygen gas via isotopic tracking

Journal of Materials Chemistry C ◽

10.1039/d0tc05439a ◽

2021 ◽

Vol 9 (12) ◽

pp. 4307-4315

Author(s):

Tai Nguyen ◽

Nathalie Valle ◽

Jérôme Guillot ◽

Jérôme Bour ◽

Noureddine Adjeroud ◽

...

Keyword(s):

Thin Films ◽

Zinc Oxide ◽

Atomic Layer Deposition ◽

Growth Mechanism ◽

Growth Process ◽

Atomic Layer ◽

Zno Thin Films ◽

Zno Films ◽

Layer Deposition ◽

Oxygen Gas

The growth process of zinc oxide (ZnO) thin films by atomic layer deposition (ALD) accompanied by the presence of oxygen gas pulsing is investigated by means of the isotopic tracking of oxygen 18O from the water precursor and oxygen 16O from the gas.

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Atomic Layer Deposition of Undoped and Al-Doped ZnO Thin Films Usingthe Zn Alkoxide Precursor Methylzinc Isopropoxide

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2008.ic47 ◽

2008 ◽

Vol 8 (9) ◽

pp. 4856-4859 ◽

Cited By ~ 22

Author(s):

Ki-Seok An ◽

Wontae Cho ◽

Byung Kook Lee ◽

Sun Sook Lee ◽

Chang Gyoun Kim

Keyword(s):

Thin Films ◽

Growth Rate ◽

Atomic Layer Deposition ◽

Substrate Temperature ◽

Deep Level ◽

Atomic Layer ◽

Zno Thin Films ◽

Zno Films ◽

Layer Deposition ◽

Doped Zno

Undoped and Al-doped ZnO thin films have been prepared by atomic layer deposition (ALD) using the Zn precursor methylzinc isopropoxide [MZI, (CH3)Zn(OCH(CH3)2)] with water (H2O). Dimethylaluminum isopropoxide (DMAI) was used as an Al precursor. The self-limiting ALD process via alternate surface reactions of MZI and H2O was confirmed by thickness measurements of the ZnO films with varying MZI supply time and numbers of MZI-H2O ALD cycles. Under optimal reaction conditions, the growth rate of the ZnO films was 1.9∼2.0 Å/cycle in the substrate temperature range of 160∼200 °C and the maximum growth rate reached about 2.58 Å/cycle at 240 °C. Room temperature photoluminescence (PL) measurements revealed a strong free excitonic peak at 3.27 eV with almost negligible deep level emission. Resistivities of ZnO films were measured to be 5 × 10−3 ∼3.2 × 10−3 Ωcm depending on the substrate temperature. By Al-doping, the resistivity was minimized to ∼1 35 × 10−4 Ωcm.

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Effect of Annealing Atmosphere on the Structural and Optical Properties of ZnO Thin Films on Si (100) Substrates Grown by Atomic Layer Deposition

Journal of Nano Research ◽

10.4028/www.scientific.net/jnanor.37.92 ◽

2015 ◽

Vol 37 ◽

pp. 92-98 ◽

Cited By ~ 1

Author(s):

J.L. Tian ◽

Gui Gen Wang ◽

Hua Yu Zhang

Keyword(s):

Thin Films ◽

Optical Properties ◽

Atomic Layer Deposition ◽

Hexagonal Wurtzite Structure ◽

Atomic Layer ◽

Zno Thin Films ◽

Annealing Atmosphere ◽

Structural And Optical Properties ◽

Layer Deposition ◽

Crystallographic Planes

ZnO thin films were deposited on Si (100) substrates by atomic layer deposition. Annealing treatments for the as-deposited films were performed in nitrogen, oxygen, argon and air at 800 °C, respectively. The influence of annealing atmosphere on the structural and optical properties of the ALD-ZnO thin films was investigated by XRD, SEM, and PL. Results reveals that the films annealed in oxygen atmosphere exhibited excellent crystallinity (polycrystalline hexagonal wurtzite structure with a strong (002) preferred crystallographic planes), relatively smooth surface and better luminescence performance, which means that O2 is the most suitable annealing atmosphere for obtaining high quality ALD-ZnO thin films.

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