Optical Emission Spectroscopy Study of Magnetron Assisted Ni-Ti DC Sputtering

2006 ◽  
Vol 514-516 ◽  
pp. 1274-1278
Author(s):  
Marcia Silva ◽  
Paulo R. Gordo ◽  
Manuel J.P. Maneira ◽  
Francisco Manuel Braz Fernandes

Ni-Ti thin films where the R-phase transformation occurs between 55°C and 30°C, the peak temperature being 40°C, have been produced. These thin films have been grown using a magnetron assisted system of dc sputtering, with a Glow-Discharge Optical Emission Spectroscopy device. The OES technique has been used to investigate the spatial distribution of sputtered atoms from the cathode to the substrate in different operating conditions: Argon pressure of 5 and 9x10 – 4 Torr, without polarization and with – 60 V bias. Structural characterization of the thin films has been made by XRD and the transformation temperatures associated to the shape memory effect have been determined by DSC. A discussion of the optimization of the processing parameters (Argon pressure and polarization) is then presented.

2021 ◽  
Vol 54 (27) ◽  
pp. 275203
Author(s):  
M Nikolić ◽  
I Sepulveda ◽  
C Gonzalez ◽  
N Khogeer ◽  
M Fernandez-Monteith

2020 ◽  
Vol 370 ◽  
pp. 111278 ◽  
Author(s):  
Sébastien Rassou ◽  
Alain Piquemal ◽  
Nofel Merbahi ◽  
Fréderic Marchal ◽  
Mohammed Yousfi

1999 ◽  
Vol 569 ◽  
Author(s):  
L. Wang ◽  
I. Eisgruber ◽  
R. Hollingsworth ◽  
C. DeHart ◽  
T. Wangensteen ◽  
...  

ABSTRACTManufacturable, sputtered, device-quality, CdS thin films are reported for high efficiency solar cell applications. The sputtering plasma is monitored during deposition using optical emission spectroscopy. Optical emission spectroscopy (OES) is commonly used as an end point detector in plasma etching processes, where the disappearance of the etch product wavelength signature provides an unambiguous indication of completion. OES is only now beginning to be examined for controlling deposition processes, primarily because the dependence between OES signal and film properties can frequently be a quite complex function of the electron and gas densities, the emitting species concentration, the electron impact excitation cross section, the electron energy distribution function, and the probability of inelastic collisions between plasma species. OES monitoring during CdS sputtering allows accurate determination of deposition rate. Both Cd and S emission peaks can be identified, allowing tracking of the results of preferential sputtering. The OES output has been tied directly into the chamber controls, resulting in automatic closed-loop control of deposition rate. The resulting CdS films are device-quality and well-suited to large-scale manufacturing. A photovoltaic efficiency of 12.1 % was obtained from sputtered CdS on CIGS absorber, compared to 12.9% for the traditional, but less manufacturable, chemical bath deposited CdS on the same batch of CIGS. The sputtering technique has many advantages over other deposition techniques, such as easy scaleablity to large areas, simple process control, compatibility with in-line manufacturing of layered devices and low cost. RF, or lower-cost pulsed DC, sputtering power supplies can be used with comparable deposition rates. The structure, optical, and electrical properties of the sputtered CdS thin films have been characterized.


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